Patents by Inventor Jonathan Champliaud

Jonathan Champliaud has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12218263
    Abstract: Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of: a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips; b) depositing a conductive layer (5) across said zones; c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b); d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b); e) etching said conductive layer (5) in said exposed areas; f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.
    Type: Grant
    Filed: October 28, 2020
    Date of Patent: February 4, 2025
    Assignee: CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA—RECHERCHE ET DEVELOPPEMENT
    Inventors: Antonin Faes, Bertrand Paviet-Salomon, Nicolas Badel, Jonathan Champliaud, Matthieu Despeisse, Christophe Ballif, Gaëlle Andreatta
  • Publication number: 20230006083
    Abstract: Method of manufacturing a single-side-contacted photovoltaic device (1), comprising the steps of: a) providing a photovoltaically-active substrate (3) defining a plurality of alternating hole collecting zones (3a) and electron collecting zones (3b) arranged in parallel strips; b) depositing a conductive layer (5) across said zones; c) depositing at least one conductive track (9) extending along at least part of each of said zones (3a, 3b); d) selectively forming a dielectric layer (7) on each of said zones (3a, 3b), so as to leave an exposed area free of dielectric at an interface between adjacent zones (3a, 3b); e) etching said conductive layer (5) in said exposed areas; f) applying a plurality of interconnecting conductors (11a, 11b) so as to electrically interconnect at least a portion of said hole collecting zones (3a) with each other, and to electrically interconnect at least a portion of said electron collecting zones (3b) with each other.
    Type: Application
    Filed: October 28, 2020
    Publication date: January 5, 2023
    Applicant: CSEM CENTRE SUISSE D'ELECTRONIQUE ET DE MICROTECHNIQUE SA- RECHERCHE ET DÉVELOPPEMENT
    Inventors: Antonin FAES, Bertrand PAVIET-SALOMON, Nicolas BADEL, Jonathan CHAMPLIAUD, Matthieu DESPEISSE, Christophe BALLIF, Gaëlle ANDREATTA
  • Patent number: 10112838
    Abstract: The invention relates to a method comprising a step of emitting at least one first gas flow (12), a step of sweeping the free surface of the material (15) by means of said first flow (12), followed by a step of discharging the first flow via at least one discharge area. Along with the step of emitting the first flow (12), a step of emitting at least one second gas flow (13) is implemented, said second gas flow forming a protective cover over the free surface of the material (15), at a distance from said free surface. The second gas flow (13) is discharged via an upper part of the discharge area of the container (10), while the first flow (12) is discharged through a lower part of the discharge area.
    Type: Grant
    Filed: July 28, 2014
    Date of Patent: October 30, 2018
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jonathan Champliaud, Mickaël Albaric, Loic Patatut
  • Publication number: 20160200584
    Abstract: The invention relates to a method comprising a step of emitting at least one first gas flow (12), a step of sweeping the free surface of the material (15) by means of said first flow (12), followed by a step of discharging the first flow via at least one discharge area. Along with the step of emitting the first flow (12), a step of emitting at least one second gas flow (13) is implemented, said second gas flow forming a protective cover over the free surface of the material (15), at a distance from said free surface. The second gas flow (13) is discharged via an upper part of the discharge area of the container (10), while the first flow (12) is discharged through a lower part of the discharge area.
    Type: Application
    Filed: July 28, 2014
    Publication date: July 14, 2016
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Jonathan Champliaud, Mickaël Albaric, Loic Patatut