Patents by Inventor Jonathan Cobb

Jonathan Cobb has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110252082
    Abstract: Techniques for delivering content to an end user device are disclosed. A policy server performs an ingest process in which multiple versions of a content object are created. The multiple versions of the content object are associated with a single network identifier which can be distributed to publishers of the content object. When the content object is requested using the single network identifier, the policy server determines a preferred version and delivery orchestration scheme from among the multiple versions for delivery to an end user device based on several criteria. The policy server may thereafter orchestrate delivery of the preferred version of the content object to the end user device. The single network identifier may be associated with an edge location in a content delivery network (CDN) and the policy server may orchestrate delivery in cooperation with servers at the CDN edge location.
    Type: Application
    Filed: April 8, 2010
    Publication date: October 13, 2011
    Applicant: Limelight Networks, Inc.
    Inventors: Jonathan Cobb, David Rowley, Scott Anderson, Abbas Mahyari, Nikita Dolgov, Carl Rivas
  • Patent number: 8024472
    Abstract: Techniques for third party verification using override IP addresses is described, including detecting a request header from an endpoint, the request header being associated with a request for a media file, initiating a download of the media file to the endpoint, evaluating the request header to identify an address associated with the endpoint, generating a notification comprising the address, the notification being configured to indicate the address overrides a source address identified by a field in a packet associated with the request header, and sending the notification to report data associated with the media file, wherein the address overrides the source address to identify a source of the request.
    Type: Grant
    Filed: September 25, 2007
    Date of Patent: September 20, 2011
    Assignee: Limelight Networks, Inc.
    Inventor: Jonathan Cobb
  • Publication number: 20070243491
    Abstract: A method for making a semiconductor device includes (a) providing a source of actinic radiation (601), (b) providing a mask formed from (i) a substrate that is substantially transparent to the actinic radiation, and (ii) a plurality of silicon nitride structures formed on the substrate using chemical vapor deposition and selective etching, wherein each silicon nitride structure has a transmission with respect to the actinic radiation that is within the range of about 30% to about 35%, and wherein the combination of each silicon nitride structure and the substrate imparts to the actinic radiation a phase change within the range of about 190° to about 200° (603), and (c) using the mask and the source of actinic radiation to impart a pattern to a semiconductor substrate (607, 609).
    Type: Application
    Filed: April 18, 2006
    Publication date: October 18, 2007
    Inventors: Wei Wu, Jonathan Cobb, Bernard Roman
  • Publication number: 20070207404
    Abstract: A method for reducing line edge roughness (LER) in a layer of photoresist is provided. In accordance with the method, a layer of photoresist is applied to a substrate. The layer of photoresist is then patterned and annealed in an atmosphere comprising at least one gas selected from the group consisting of hydrogen, nitrogen and fluorine-containing materials. Preferably, the anneal is performed after patterning the photoresist, but either immediately after, or subsequent to, the trim.
    Type: Application
    Filed: March 6, 2006
    Publication date: September 6, 2007
    Inventors: Jinmiao Shen, Jonathan Cobb, William Darlington, Brian Fisher, Mark Hall, Vikas Sheth, Mehul Shroff, James Vasek
  • Publication number: 20070015064
    Abstract: A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.
    Type: Application
    Filed: July 14, 2005
    Publication date: January 18, 2007
    Inventors: Jonathan Cobb, Bernard Roman, Wei Wu
  • Publication number: 20060242201
    Abstract: A method for content insertion is provided. In this method, a first media data is received from a server and a placement request is transmitted to a content provider service. As a result, a placement response is received from the content provider service. The placement response includes data identifying a second media data associated with the first media data. The second media data is retrieved and merged with the first media data. After the merge, the first and second media data are transmitted to the server.
    Type: Application
    Filed: April 18, 2006
    Publication date: October 26, 2006
    Inventors: Jonathan Cobb, Ryan Bloom
  • Patent number: 6891229
    Abstract: A method of forming a semiconductor device so as to provide the device inverted isolation trenches with convex sidewalls. Initially, a plurality of composite isolation posts (50, 51) are formed on a substrate (40) through successive deposition, lithography, and etching steps. The posts comprise a bottom layer (501, 502) of silicon dioxide and an overlying etch-stop layer of silicon nitride (502, 512). An insulating material (60) is then deposited over the isolation posts and areas of the substrate. Isolation structures (70,71) are established by etching the insulating material to form convex sidewall spacers (701,702, 711, 712) at the vertical walls of the isolation posts. Active areas (80) between spacers are filled with semiconductor material. In an embodiment, a strained cap layer (101) may be imposed on the active areas. The strained cap layer has a lattice constant that is different from the lattice constant of the semiconductor material.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: May 10, 2005
    Assignee: Freescale Semiconductor, Inc.
    Inventors: Andrea Franke, Jonathan Cobb, John M. Grant, Al T. Koh, Yeong-Jyh T. Lii, Bich-Yen Nguyen, Anna M. Phillips
  • Publication number: 20040217437
    Abstract: A method of forming a semiconductor device so as to provide the device inverted isolation trenches with convex sidewalls. Initially, a plurality of composite isolation posts (50, 51) are formed on a substrate (40) through successive deposition, lithography, and etching steps. The posts comprise a bottom layer (501, 502) of silicon dioxide and an overlying etch-stop layer of silicon nitride (502, 512). An insulating material (60) is then deposited over the isolation posts and areas of the substrate. Isolation structures (70,71) are established by etching the insulating material to form convex sidewall spacers (701,702, 711, 712) at the vertical walls of the isolation posts. Active areas (80) between spacers are filled with semiconductor material. In an embodiment, a strained cap layer (101) may be imposed on the active areas. The strained cap layer has a lattice constant that is different from the lattice constant of the semiconductor material.
    Type: Application
    Filed: April 30, 2003
    Publication date: November 4, 2004
    Inventors: Andrea Franke, Jonathan Cobb, John M. Grant, Al T. Koh, Yeong-Jyh T. Lii, Bich-Yen Nguyen, Anna M. Phillips