Patents by Inventor Jonathan D. Maimon

Jonathan D. Maimon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-volatile memory device including phase-change material
    Patent number: 8222625
    Abstract: A non-volatile memory device including a phase-change material, which has a low operating voltage and low power consumption, includes a lower electrode; a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, wherein the phase-change material layer includes a phase-change material having a composition represented by SnXSbYTeZ or, alternatively with substitutions, in whole or in part, of silicon and/or indium for tin, arsenic and/or bismuth for antimony, and selenium for tellurium; and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. Here, 0.001?X?0.3, 0.001?Y?0.8, 0.1?Z?0.8, and X+Y+Z=1.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: July 17, 2012
    Assignees: Samsung Electronics Co., Ltd., Ovonyx, Inc.
    Inventors: Dong-ho Ahn, Hideki Horii, Soon-oh Park, Young-hyun Kim, Hee-ju Shin, Jin-ho Oh, Carl H. Schell, Jonathan D. Maimon, Stephen J. Hudgens