Abstract: Exemplary embodiments provide a packing leak detection system for leaks or discharge of a volatile material which discharge into the environment is subject to regulation. The system contains a compressor apparatus including a compressor cylinder, a compressor piston, a compressor piston rod positioned in a packing case, wherein a volatile material being compressed by the compressor apparatus leaks from the packing case. Also provided is a leak detector sized and configured to detect and monitor leaks of the volatile material from the packing case, as well as an apparatus for capturing and collecting volatile material which may leak from said leak detector. Methods of assessing leaks of a volatile material subject to environmental regulation are also provided.

Abstract: Exemplary embodiments provide a packing leak detection system for leaks or discharge of a volatile material which discharge into the environment is subject to regulation. The system contains a compressor apparatus including a compressor cylinder, a compressor piston, a compressor piston rod positioned in a packing case, wherein a volatile material being compressed by the compressor apparatus leaks from the packing case. Also provided is a leak detector sized and configured to detect and monitor leaks of the volatile material from the packing case. Methods of assessing leaks of a volatile material subject to environmental regulation are also provided.

Abstract: Exemplary embodiments provide a packing leak detection system for leaks or discharge of a volatile material which discharge into the environment is subject to regulation. The system contains a compressor apparatus including a compressor cylinder, a compressor piston, a compressor piston rod positioned in a packing case, wherein a volatile material being compressed by the compressor apparatus leaks from the packing case. Also provided is a leak detector sized and configured to detect and monitor leaks of the volatile material from the packing case. Methods of assessing leaks of a volatile material subject to environmental regulation are also provided.

Abstract: A process for forming both low voltage CMOS transistors and high voltage CMOS transistors on a common integrated circuit chip uses a common implantation and drive-in step to form both the n-type well of each PMOS transistor and the n-type drain extension well of each lightly doped drain (LDD) NMOS transistor and a separate implant and drive-in to form the p-type drain extension well of each LDD PMOS transistor.

Abstract: A process is used to form in a common substrate a PMOS transistor of the lightly doped drain (LDD) type, an NMOS transistor of the LDD type and a vertical n-p-n bipolar transistor. In particular: the steps used to form an n-type well for the PMOS transistor, and an n-type drain extension well for the NMOS transistor, are also used to form the n-type collector of the bipolar transistor; the steps used to form the p-type extension well for the PMOS transistor are also used to form the p-type base of the bipolar transistor, the source/drain implantation step for the NMOS transistor is also used to form the emitter and a contact region for the collector of the bipolar transistor; and the source/drain implantation step for the PMOS transistor is used to form a contact region for the base of the bipolar transistor.