Patents by Inventor Jonathan E. Faltermeir

Jonathan E. Faltermeir has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6358867
    Abstract: A method for forming an oxide of substantially uniform thickness on at least two crystallographic planes of silicon, in accordance with the present invention, includes providing a substrate where silicon surfaces have at least two different crystallographic orientations of the silicon crystal. Atomic oxygen (O) is formed for oxidizing the surfaces. An oxide is formed on the surfaces by reacting the atomic oxygen with the surfaces to simultaneously form a substantially uniform thickness of the oxide on the surfaces.
    Type: Grant
    Filed: June 16, 2000
    Date of Patent: March 19, 2002
    Assignees: Infineon Technologies AG, International Business Machines Corporation
    Inventors: Helmut Horst Tews, Jonathan E. Faltermeir, Rajeev Malik, Carol Heenan, Oleg Gluschenkov