Patents by Inventor Jonathan E. LEONARD

Jonathan E. LEONARD has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11189487
    Abstract: A high-pressure dielectric film curing apparatus, such as a high-pressure batch furnace, is controlled to an elevated cure temperature and super-atmospheric pressure for the duration of the film curing time with the cure pressure achieved at least partially with a vapor of aqueous ammonia in fluid communication with the chamber. The cure temperature may vary, for example between 175° C., and 400° C., or more. The cure pressure may also vary as limited by the saturated water vapor pressure, for example between 100 PSIA and 300 PSIA, or more. The aqueous ammonia may be injected into the chamber or vaporized upstream of the chamber. One or more carrier and/or diluent gas (vapor) may be introduced into the chamber to adjust the partial pressure of ammonia vapor, water vapor, and the diluent.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: November 30, 2021
    Assignee: Intel Corporation
    Inventors: Jonathan E. Leonard, Aravind S. Killampalli, Chad Byers, Jay P. Gupta
  • Publication number: 20210287901
    Abstract: A high-pressure dielectric film curing apparatus, such as a high-pressure batch furnace, is controlled to an elevated cure temperature and super-atmospheric pressure for the duration of the film curing time with the cure pressure achieved at least partially with a vapor of aqueous ammonia in fluid communication with the chamber. The cure temperature may vary, for example between 175° C., and 400° C., or more. The cure pressure may also vary as limited by the saturated water vapor pressure, for example between 100 PSIA and 300 PSIA, or more. The aqueous ammonia may be injected into the chamber or vaporized upstream of the chamber. One or more carrier and/or diluent gas (vapor) may be introduced into the chamber to adjust the partial pressure of ammonia vapor, water vapor, and the diluent.
    Type: Application
    Filed: September 30, 2016
    Publication date: September 16, 2021
    Applicant: Intel Corporation
    Inventors: Jonathan E. LEONARD, Aravind S. KILLAMPALLI, Chad BYERS, Jay P. GUPTA