Patents by Inventor Jonathan E. Moussa

Jonathan E. Moussa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions
    Patent number: 6937967
    Abstract: This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.
    Type: Grant
    Filed: February 28, 2001
    Date of Patent: August 30, 2005
    Assignee: TDK Corporation
    Inventors: Daniel R. Hines, Stuart A. Solin, Tao Zhou, Jonathan E. Moussa, Lakshminarayanapuram Ramdas Ram-Mohan, John M. Sullivan, Jr.
  • Method and system for finite element modeling and simulation of enhanced magnetoresistance in thin film semiconductors with metallic inclusions
    Publication number: 20020173941
    Abstract: This invention relates to a method and system for finite element modeling of enhanced magnetoresistance in thin film semiconductors containing at least one metallic inclusion therein. The method and system utilizes finite element analysis techniques as a function of the applied magnetic field and the geometry of the device for comparing the device characteristics with predetermined qualities and modifying the device to achieve a correlation between the device characteristics and the predetermined qualities.
    Type: Application
    Filed: February 28, 2001
    Publication date: November 21, 2002
    Inventors: Daniel R. Hines, Stuart A. Solin, Tao Zhou, Jonathan E. Moussa, Lakshminarayanapuram Ramdas Ram-Mohan, John M. Sullivan, Jr.