Abstract: A multiple wavelength laser processing system is configured with a multiple wavelength laser source for generating a multiple wavelength coaxial laser processing beam. The laser processing system further includes a multiple wavelength optical system to deliver the coaxial laser processing beam to a laser-material interaction zone on the surface of a workpiece such that each of the first and a second laser wavelengths in the processing beam impinge at least a portion of the interaction zone as respective first and second concentric laser spots. The multiple wavelength optical system includes a multiple wavelength beam collimator, a configurable chromatic optic, and a laser processing focus lens, wherein the configurable chromatic optic provides an adjustment to the relative focus distance of the first and second laser wavelengths.

Abstract: A multiple wavelength laser processing system is configured with a multiple wavelength laser source for generating a multiple wavelength coaxial laser processing beam. The laser processing system further includes a multiple wavelength optical system to deliver the coaxial laser processing beam to a laser-material interaction zone on the surface of a workpiece such that each of the a first and a second laser wavelengths in the processing beam impinge at least a portion of the interaction zone as respective first and second concentric laser spots. The multiple wavelength optical system includes a multiple wavelength beam collimator, a configurable chromatic optic, and a laser processing focus lens, wherein the configurable chromatic optic provides an adjustment to the relative focus distance of the first and second laser wavelengths.

Abstract: A multiple wavelength laser processing system is configured with a multiple wavelength laser source for generating a multiple wavelength coaxial laser processing beam. The laser processing system further includes a multiple wavelength optical system to deliver the coaxial laser processing beam to a laser-material interaction zone on the surface of a workpiece such that each of the first and a second laser wavelengths in the processing beam impinge at least a portion of the interaction zone as respective first and second concentric laser spots. The multiple wavelength optical system includes a multiple wavelength beam collimator, a configurable chromatic optic, and a laser processing focus lens, wherein the configurable chromatic optic provides an adjustment to the relative focus distance of the first and second laser wavelengths.

Abstract: A laser-based method and system for processing targeted surface material and article produced thereby are provided. The system processes the targeted surface material within a region of a workpiece while avoiding undesirable changes to adjacent non-targeted material. The system includes a primary laser subsystem including a primary laser source for generating a pulsed laser output including at least one pulse having a wavelength and a pulse width less than 1 ns. A delivery subsystem irradiates the targeted surface material of the workpiece with the pulsed laser output including the at least one pulse to texture the targeted surface material. The pulsed laser output has sufficient total fluence to initiate ablation within at least a portion of the targeted surface material and the pulse width is short enough such that the region and the non-targeted material surrounding the material are substantially free of slag.

Abstract: An illumination system is disclosed for use in a semiconductor wafer back side inspection assembly. The illumination system includes an illumination source that is configured to direct illumination toward a highly reflective and directionally reflective surface at an angle ? of about 45 degrees to about 75 degrees with respect to the surface.

Abstract: A reflective metrological scale has a scale pattern of elongated side-by-side marks surrounded by reflective surface areas of a substrate, which may be a nickel-based metal alloy such as Invar® or Inconel® and may be a thin and elongated flexible tape. Each mark has a furrowed cross section and may have a depth in the range of 0.5 to 2 microns. The central region of each mark may be rippled or ridged and may be darkened to provide an enhanced optical reflection ratio with respect to surrounding reflective surface areas. A manufacturing method includes the repeated steps of (1) creating a scale mark by irradiating a surface of the substrate at a mark location with a series of overlapped pulses from a laser, each pulse having an energy density of less than about 1 joule per cm2, and (2) changing the relative position of the laser and the substrate by a displacement amount defining a next mark location on the substrate at which a next mark of the scale is to be created.

Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Abstract: An energy beam machining system includes an emitter for emitting an energy beam and beam adjusting optics, such as a zoom telescope, for adjusting the pupil size of the system to multiple values. The adjusting of the pupil size can be carried out automatically, semi-automatically, or manually. In manual modes, instructions can be presented to the operator (e.g., via a monitor or pre-programmed audio instruction) indicating how to adjust pupil size. A focus lens focuses the adjusted beam directed along each path at a different focal point within a scan field encompassed in the field of view of the focus lens. Beam directing optics are configured to enable multiple scan fields within the field of view of the focus lens.

Abstract: Laser-based methods and systems for removing one or more target link structures of a circuit fabricated on a substrate includes generating a pulsed laser output at a predetermined wavelength less than an absorption edge of the substrate are provided. The laser output includes at least one pulse having a pulse duration in the range of about 10 picoseconds to less than 1 nanosecond, the pulse duration being within a thermal laser processing range. The method also includes delivering and focusing the laser output onto the target link structure. The focused laser output has sufficient power density at a location within the target link structure to reduce the reflectivity of the target link structure and efficiently couple the focused laser output into the target link structure to remove the target link structure without damaging the substrate.

Abstract: An energy beam machining system includes an emitter for emitting an energy beam and beam adjusting optics, such as a zoom telescope, for adjusting the pupil size of the system to multiple values. The adjusting of the pupil size can be carried out automatically, semi-automatically, or manually. In manual modes, instructions can be presented to the operator (e.g., via a monitor or pre-programmed audio instruction) indicating how to adjust pupil size. A focus lens focuses the adjusted beam directed along each path at a different focal point within a scan field encompassed in the field of view of the focus lens. Beam directing optics are configured to enable multiple scan fields within the field of view of the focus lens.

Abstract: A method, system and scan lens for use therein are provided for high-speed, laser-based, precise laser trimming at least one electrical element along a trim path. The method includes generating a pulsed laser output with a laser, the output having one or more laser pulses at a repetition rate. A fast rise/fall time, pulse-shaped q-switched laser or an ultra-fast laser may be used. Beam shaping optics may be used to generate a flat-top beam profile. Each laser pulse has a pulse energy, a laser wavelength within a range of laser wavelengths, and a pulse duration. The wavelength is short enough to produce desired short-wavelength benefits of small spot size, tight tolerance, high absorption and reduced or eliminated heat-affected zone (HAZ) along the trim path, but not so short so as to cause microcracking. In this way, resistance drift after the trimming process is reduced.

Abstract: A laser-based method and system for selectively processing a multi-material device having a target link structure formed on a substrate while avoiding undesirable change to an adjacent link structure also formed on the substrate are disclosed. The method includes applying at least one focused laser pulse having a wavelength into a spot. The at least one focused laser pulse has an energy density over the spot sufficient to completely process the target link structure while avoiding undesirable change to the adjacent link structure, the substrate and any layers between the substrate and the link structures. The target link structure and the adjacent structure may have a pitch of about 2.0 microns or less.

Abstract: A laser processing system implements a method for aligning a probe element (e.g., a probe pin) with a device interface element (e.g., a contact pad of a circuit substrate). First, the laser processing system generates an optical reference beam at one or more predetermined positions to calibrate a reference field. The laser processing system then detects a position of the probe element in the reference field. The laser processing system also determines a relative position of the device interface element in the reference field. Based on the position of the probe element and the device interface element, the laser processing system then initiates alignment of the probe element and the device interface element. In one application, alignment of the probe element and the device interface element further includes contacting the probe element to the device interface element to make an electrical connection.

Abstract: A precision, laser-based method and system for high-speed, sequential processing of material of targets within a field are disclosed that control the irradiation distribution pattern of imaged spots. For each spot, a laser beam is incident on a first anamorphic optical device and a second anamorphic optical device so that the beam is controllably modified into an elliptical irradiance pattern. The modified beam is propagated through a scanning optical system with an objective lens to image a controlled elliptical spot on the target. In one embodiment, the relative orientations of the devices along an optical axis are controlled to modify the beam irradiance pattern to obtain an elliptical shape while the absolute orientation of the devices controls the orientation of the elliptical spot.

Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Abstract: An optical scanning method and system and method for correcting optical aberrations introduced into the system by a beam deflector are provided. The optical scanning method and system utilize a tilt-corrected, off-axis beam deflector. The scanning system includes an off-axis acousto-optic beam deflector with a walk-off angle operated at high speed and post-scan optics used to focus the scanned beam. A tilted in-scan focus plane resulting from beam width variation through the scan and the cylindrical lens effect is corrected with one or more tilted lens elements within the post-scan optical train.

Abstract: An illumination system is disclosed for use in a semiconductor wafer back side inspection assembly. The illumination system includes an illumination source that is configured to direct illumination toward a highly reflective and directionally reflective surface at an angle ? of about 45 degrees to about 75 degrees with respect to the surface.

Abstract: A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Abstract: A precision, laser-based method and system for high-speed, sequential processing of material of targets within a field are disclosed that control the irradiation distribution pattern of imaged spots. For each spot, a laser beam is incident on a first anamorphic optical device and a second anamorphic optical device so that the beam is controllably modified into an elliptical irradiance pattern. The modified beam is propagated through a scanning optical system with an objective lens to image a controlled elliptical spot on the target. In one embodiment, the relative orientations of the devices along an optical axis are controlled to modify the beam irradiance pattern to obtain an elliptical shape while the absolute orientation of the devices controls the orientation of the elliptical spot.

Abstract: A method and system for high-speed, precise micromachining an array of devices are disclosed wherein improved process throughput and accuracy, such as resistor trimming accuracy, are provided. The number of resistance measurements are limited by using non-measurement cuts, using non-sequential collinear cutting, using spot fan-out parallel cutting, and using a retrograde scanning technique for faster collinear cuts. Non-sequential cutting is also used to manage thermal effects and calibrated cuts are used for improved accuracy. Test voltage is controlled to avoid resistor damage.