Patents by Inventor Jonathan Fewkes

Jonathan Fewkes has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for obtaining a steep retrograde channel profile
    Patent number: 5989963
    Abstract: A method of manufacturing a semiconductor device with a steep retrograde profile. The threshold voltage adjust dopant layer and the punchthrough prevent dopant layer are formed in the substrate. All surface capping layers are removed from the active device regions and, the semiconductor device is placed in a chamber and a high vacuum is established after which an inert atmosphere is introduced into the chamber. The anneal to repair the damage to the lattice and to activate the dopant ions in the dopant layers is done in the inert atmosphere with the surface of the substrate maintained clean, that is, free from a capping oxide or other layer formed on the surface of the substrate.
    Type: Grant
    Filed: July 21, 1997
    Date of Patent: November 23, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Scott D. Luning, David C. Greenlaw, Jonathan Fewkes