Abstract: An electrically or thermally conductive polymer composition, includes: a polyester polymer having a backbone including at least 12 consecutive carbon atoms between ester linkages; and conductive particles dispersed in the polyester polymer. A component including an electrically or thermally conductive polymer composition is also disclosed. A method for self-regulating a temperature of a component is also disclosed.

Abstract: Graphenic carbon nanoparticles that are dispersed in solvents through the use of dispersant resins are disclosed. The graphenic carbon nanoparticles may be milled prior to dispersion. The dispersant resins may comprise a polymeric dispersant resin comprising an addition polymer comprising the residue of a vinyl heterocyclic amide, an addition polymer comprising a homopolymer, a block (co)polymer, a random (co)polymer, an alternating (co)polymer, a graft (co)polymer, a brush (co)polymer, a star (co)polymer, a telechelic (co)polymer, or a combination thereof. The solvents may be aqueous, non-aqueous, inorganic and/or organic solvents. The dispersions are highly stable and may contain relatively high loadings of the graphenic carbon nanoparticles.

Abstract: The present invention is directed towards an electrodepositable coating composition comprising a cationic electrodepositable binder; a phyllosilicate pigment; and a dispersing agent. Also disclosed are methods of making the electrodepositable coating composition, coatings derived therefrom, and substrates coated with the coatings derived from the electrodepositable coating composition.

Abstract: Graphenic carbon nanoparticles that are dispersed in solvents through the use of dispersant resins are disclosed. The graphenic carbon nanoparticles may be milled prior to dispersion. The dispersant resins may comprise a polymeric dispersant resin comprising an addition polymer comprising the residue of a vinyl heterocyclic amide, an addition polymer comprising a homopolymer, a block (co)polymer, a random (co)polymer, an alternating (co)polymer, a graft (co)polymer, a brush (co)polymer, a star (co)polymer, a telechelic (co)polymer, or a combination thereof. The solvents may be aqueous, non-aqueous, inorganic and/or organic solvents. The dispersions are highly stable and may contain relatively high loadings of the graphenic carbon nanoparticles.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 50 to 90, a shear storage modulus (G?) at 65° C.

Abstract: The present invention is directed towards an electrodepositable coating composition comprising a cationic electrodepositable binder; a phyllosilicate pigment; and a dispersing agent. Also disclosed are methods of making the electrodepositable coating composition, coatings derived therefrom, and substrates coated with the coatings derived from the electrodepositable coating composition.

Abstract: Graphenic carbon nanoparticles that are dispersed in solvents through the use of dispersant resins are disclosed. The graphenic carbon nanoparticles may be milled prior to dispersion. The dispersant resins may comprise a polymeric dispersant resin comprising an addition polymer comprising the residue of a vinyl heterocyclic amide, an addition polymer comprising a homopolymer, a block (co)polymer, a random (co)polymer, an alternating (co)polymer, a graft (co)polymer, a brush (co)polymer, a star (co)polymer, a telechelic (co)polymer, or a combination thereof. The solvents may be aqueous, non-aqueous, inorganic and/or organic solvents. The dispersions are highly stable and may contain relatively high loadings of the graphenic carbon nanoparticles.

Abstract: An electrically or thermally conductive polymer composition, includes: a polyester polymer having a backbone including at least 12 consecutive carbon atoms between ester linkages; and conductive particles dispersed in the polyester polymer. A component including an electrically or thermally conductive polymer composition is also disclosed. A method for self-regulating a temperature of a component is also disclosed.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 60 to 90, a shear storage modulus (G?) at 65° C.

Abstract: The present invention provides a chemical mechanical (CMP) polishing pad for polishing three dimensional semiconductor or memory substrates comprising a polishing layer of a polyurethane reaction product of a thermosetting reaction mixture of a curative of 4,4?-methylenebis(3-chloro-2,6-diethylaniline) (MCDEA) or mixtures of MCDEA and 4,4?-methylene-bis-o-(2-chloroaniline) (MbOCA), and a polyisocyanate prepolymer formed from one or two aromatic diisocyanates, such as toluene diisocyanate (TDI), or a mixture of an aromatic diisocyanate and an alicyclic diisocyanate, and a polyol of polytetramethylene ether glycol (PTMEG), polypropylene glycol (PPG), or a polyol blend of PTMEG and PPG and having an unreacted isocyanate (NCO) concentration of from 8.6 to 11 wt. %. The polyurethane in the polishing layer has a Shore D hardness according to ASTM D2240-15 (2015) of from 50 to 90, a shear storage modulus (G?) at 65° C.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

Abstract: A chemical mechanical polishing pad for polishing a semiconductor substrate is provided containing a polishing layer that comprises a polyurethane reaction product of a reaction mixture comprising a curative and a polyisocyanate prepolymer having an unreacted isocyanate (NCO) concentration of from 8.3 to 9.8 wt. % and formed from a polyol blend of polypropylene glycol (PPG) and polytetramethylene ether glycol (PTMEG) and containing a hydrophilic portion of polyethylene glycol or ethylene oxide repeat units, a toluene diisocyanate, and one or more isocyanate extenders, wherein the polyurethane reaction product exhibits a wet Shore D hardness of from 10 to 20% less than the Shore D hardness of the dry polyurethane reaction product.

Abstract: Methods described herein may be useful in the fabrication and/or screening of devices (e.g., sensors, circuits, etc.) including conductive materials. In some embodiments, a conductive material is formed on a substrate using mechanical abrasion. The methods described herein may be useful in fabricating sensors, circuits, tags for remotely-monitored sensors or human/object labeling and tracking, among other devices. In some cases, devices for determining analytes are also provided.