Abstract: A method of forming an image detector from an optical detector having a first side connected to a substrate and a second side opposite the first side. The method includes: receiving the detector; electrically coupling the second side of the detector to a read out integrated circuit (ROIC); securing the detector to the ROIC with an adhesive, wherein the adhesive surrounds the detector and at least a portion of the substrate. The method also includes chemically removing at least some of the substrate to expose an exposed portion of the first side of the detector. Such removal results in the formation of an adhesive fence from the adhesive that has a fence upper surface that is above the first side on which an optical element is mounted such that an air gap exists between the first side of the detector and the optical element.

Abstract: A direct bond hybridization (DBH) method is provided. The DBH method includes preparing a first underlying layer, a first contact layer disposed on the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the first contact layer, preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a second contact layer disposed on the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact and bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat.

Abstract: A method of forming an image detector from an optical detector having a first side connected to a substrate and a second side opposite the first side. The method includes: receiving the detector; electrically coupling the second side of the detector to a read out integrated circuit (ROIC); securing the detector to the ROIC with an adhesive, wherein the adhesive surrounds the detector and at least a portion of the substrate. The method also includes chemically removing at least some of the substrate to expose an exposed portion of the first side of the detector. Such removal results in the formation of an adhesive fence from the adhesive that has a fence upper surface that is above the first side on which an optical element is mounted such that an air gap exists between the first side of the detector and the optical element.

Abstract: A method of forming an image detector from an optical detector having a first side connected to a substrate and a second side opposite the first side. The method includes: receiving the detector; electrically coupling the second side of the detector to a read out integrated circuit (ROIC); securing the detector to the ROIC with an adhesive, wherein the adhesive surrounds the detector and at least a portion of the substrate. The method also includes chemically removing at least some of the substrate to expose an exposed portion of the first side of the detector. Such removal results in the formation of an adhesive fence from the adhesive that has a fence upper surface that is above the first side on which an optical element is mounted such that an air gap exists between the first side of the detector and the optical element.

Abstract: A method of fabricating an integrated circuit (IC) includes depositing a photoresist on a semiconductor substrate and patterning the photoresist to expose one or more deposition target areas. The method further includes performing a dual-deposition process that deposits a plurality of layers on the photoresists and on the target areas. A conductive layer among the plurality of conductive layers inhibits X-ray energy so as to prevent damage to the underlying semiconductor substrate.

Abstract: A method of forming an image detector from an optical detector having a first side connected to a substrate and a second side opposite the first side. The method includes: receiving the detector; electrically coupling the second side of the detector to a read out integrated circuit (ROIC); securing the detector to the ROIC with an adhesive, wherein the adhesive surrounds the detector and at least a portion of the substrate. The method also includes chemically removing at least some of the substrate to expose an exposed portion of the first side of the detector. Such removal results in the formation of an adhesive fence from the adhesive that has a fence upper surface that is above the first side on which an optical element is mounted such that an air gap exists between the first side of the detector and the optical element.

Abstract: A direct bond hybridization (DBH) method is provided. The DBH method includes preparing a first underlying layer, a first contact layer disposed on the first underlying layer and a first contact electrically communicative with the first underlying layer and protruding through the first contact layer, preparing a second underlying layer, a second contact electrically communicative with the second underlying layer and formed of softer material than the first contact and a second contact layer disposed on the second underlying layer and defining an aperture about the second contact and a moat at least partially surrounding the second contact and bonding the first and second contact layers whereby the first contact contacts the second contact such that the second contact deforms and expands into the moat.

Abstract: A method of fabricating an integrated circuit (IC) includes depositing a photoresist on a semiconductor substrate and patterning the photoresist to expose one or more deposition target areas. The method further includes performing a dual-deposition process that deposits a plurality of layers on the photoresists and on the target areas. A conductive layer among the plurality of conductive layers inhibits X-ray energy so as to prevent damage to the underlying semiconductor substrate.

Abstract: In one aspect, a method includes heating a wafer chuck, heating a first wafer, depositing a first epoxy along at least a portion of a surface of the first wafer disposed on the wafer chuck, spinning the wafer chuck to spread the first epoxy at least partially across the first wafer, placing a second wafer on the first epoxy disposed on the first wafer and bonding the second wafer to the first epoxy under vacuum to form a two-wafer-bonded structure.

Abstract: In one aspect, a method includes heating a wafer chuck, heating a first wafer, depositing a first epoxy along at least a portion of a surface of the first wafer disposed on the wafer chuck, spinning the wafer chuck to spread the first epoxy at least partially across the first wafer, placing a second wafer on the first epoxy disposed on the first wafer and bonding the second wafer to the first epoxy under vacuum to form a two-wafer-bonded structure.

Abstract: In one aspect, a method includes heating a wafer chuck, heating a first wafer, depositing a first epoxy along at least a portion of a surface of the first wafer disposed on the wafer chuck, spinning the wafer chuck to spread the first epoxy at least partially across the first wafer, placing a second wafer on the first epoxy disposed on the first wafer and bonding the second wafer to the first epoxy under vacuum to form a two-wafer-bonded structure.

Abstract: A method for bonding a first semiconductor body having a plurality of electromagnetic radiation detectors to a second semiconductor body having read out integrated circuits for the detectors. The method includes: aligning electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits; tacking the aligned electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits to form an intermediate stage structure; packaging the intermediate stage structure into a vacuum sealed electrostatic shielding container having flexible walls; inserting the package with the intermediate stage structure therein into an isostatic pressure chamber; and applying the isostatic pressure to the intermediate stage structure through walls of the container. The container includes a stand-off to space walls of the container from edges of the first semiconductor body.

Abstract: A method for bonding a first semiconductor body having a plurality of electromagnetic radiation detectors to a second semiconductor body having read out integrated circuits for the detectors. The method includes: aligning electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits; tacking the aligned electrical contacts for the plurality of electromagnetic radiation detectors with electrical contacts of the read out integrated circuits to form an intermediate stage structure; packaging the intermediate stage structure into a vacuum sealed electrostatic shielding container having flexible walls; inserting the package with the intermediate stage structure therein into an isostatic pressure chamber; and applying the isostatic pressure to the intermediate stage structure through walls of the container. The container includes a stand-off to space walls of the container from edges of the first semiconductor body.

Abstract: A contact structure for interconnecting a first substrate to an indium interconnect structure on a second substrate. The contact structure comprises a diffusive layer and a non-oxidizing layer, with a thickness of less than approximately 150 nm, positioned on the diffusive layer for alignment with the indium interconnect.