Abstract: Tomosynthesis data may be acquired from an ionizing radiation source that substantially continuously emits radiation while its position is varied relative to a photon counting detector. The detector detects photons comprised within the radiation and photon data indicative of the detected photons is generated. The photon data may comprise data related to a detected photon's detection time, detection location on the detector, energy level, and/or trajectory from the radiation source, for example. The photon data of various photons may be compiled into a plurality of bins and, through reconstruction and tomosynthesis techniques, produce synthesized images of various tomography planes of an object under examination. In this way, the tomosynthesis techniques rely on counting photons rather than measuring their energy to create synthesized images.

Abstract: Tomosynthesis data may be acquired from an ionizing radiation source that substantially continuously emits radiation while its position is varied relative to a photon counting detector. The detector detects photons comprised within the radiation and photon data indicative of the detected photons is generated. The photon data may comprise data related to a detected photon's detection time, detection location on the detector, energy level, and/or trajectory from the radiation source, for example. The photon data of various photons may be compiled into a plurality of bins and, through reconstruction and tomosynthesis techniques, produce synthesized images of various tomography planes of an object under examination. In this way, the tomosynthesis techniques rely on counting photons rather than measuring their energy to create synthesized images.

Abstract: Tomosynthesis data may be acquired from a radiation source that substantially continuously emits radiation while its position is varied relative to a photon counting x-ray detector. The detector detects photons comprised within the radiation and photon data indicative of the detected photons is generated. The photon data may comprise data related to a detected photon's detection time, detection location on the detector, energy level, and/or trajectory from the radiation source, for example. The photon data of various photons may be compiled into a plurality of bins and, through reconstruction and tomosynthesis techniques, produce synthesized images of various tomography planes of an object under examination. In this way, the tomosynthesis techniques rely on counting photons rather than measuring their energy to create synthesized images.

Abstract: Tomosynthesis data may be acquired from a radiation source that substantially continuously emits radiation while its position is varied relative to a photon counting x-ray detector. The detector detects photons comprised within the radiation and photon data indicative of the detected photons is generated. The photon data may comprise data related to a detected photon's detection time, detection location on the detector, energy level, and/or trajectory from the radiation source, for example. The photon data of various photons may be compiled into a plurality of bins and, through reconstruction and tomosynthesis techniques, produce synthesized images of various tomography planes of an object under examination. In this way, the tomosynthesis techniques rely on counting photons rather than measuring their energy to create synthesized images.

Abstract: A method for integrating optical devices in a single growth step by utilizing a combination of Selective Area Growth and Etch (SAGE) is provided. An first device is formed between a set of oxide-masked regions, whilst a second device is formed in an adjacent planar region. By use of Selected Area Growth and Etch (SAGE), in which the growth between the oxide-masked regions is greater than the growth in the planar region, and in which the etch rate in the area between the oxide-masked regions is substantially the same as that in the planar region, the number of active quantum layers for the first device are formed between the oxide-masked regions, and a different number of layers for the second device is formed in the planar region.

Abstract: A method for integrating optical devices in a single growth step by utilizing a combination of Selective Area Growth and Etch (SAGE) is provided. An first device is formed between a set of oxide-masked regions, whilst a second device is formed in an adjacent planar region. By use of Selected Area Growth and Etch (SAGE), in which the growth between the oxide-masked regions is greater than the growth in the planar region, and in which the etch rate in the area between the oxide-masked regions is substantially the same as that in the planar region, the number of active quantum layers for the first device are formed between the oxide-masked regions, and a different number of layers for the second device is formed in the planar region.