Abstract: A method of machining a workpiece using a machine tool, the machine tool comprising a tool mount carrying a tool, a workpiece mount carrying a workpiece, a drive mechanism for moving at least one of the tool mount and the workpiece mount relative to the other, and a control arrangement for controlling the drive mechanism. The method comprises moving at least one of the tool mount and the workpiece mount with the drive mechanism under the control of the control arrangement so that the tool contacts a portion of the workpiece to commence a machining operation, and the tool then removes material from the portion of the workpiece until completion of the machining operation, the movement being such that the relative velocity between the tool and the workpiece decreases continuously during the majority of the time that the tool and the workpiece are in contact with each other during the machining operation.

Abstract: A method of machining a workpiece using a machine tool, the machine tool comprising a tool mount carrying a tool, a workpiece mount carrying a workpiece, a drive mechanism for moving at least one of the tool mount and the workpiece mount relative to the other, and a control arrangement for controlling the drive mechanism. The method comprises moving at least one of the tool mount and the workpiece mount with the drive mechanism under the control of the control arrangement so that the tool contacts a portion of the workpiece to commence a machining operation, and the tool then removes material from the portion of the workpiece until completion of the machining operation, the movement being such that the relative velocity between the tool and the workpiece decreases continuously during the majority of the time that the tool and the workpiece are in contact with each other during the machining operation.

Abstract: A mobile device may include a plurality of sensors and a processor. The processor may be configured to determine trust data for an asset based upon inputs from the plurality of sensors, determine whether an asset is accessible or not accessible based upon evaluating the trust data with a trust determination algorithm, and continuously update the trust data to continue to allow access to the asset or revoke access to the asset based upon the inputs from the plurality of sensors.

Abstract: A mobile device may include a plurality of sensors and a processor. The processor may be configured to determine trust data for an asset based upon inputs from the plurality of sensors, determine whether an asset is accessible or not accessible based upon evaluating the trust data with a trust determination algorithm, and continuously update the trust data to continue to allow access to the asset or revoke access to the asset based upon the inputs from the plurality of sensors.

Abstract: A durable chip pad for integrated circuit (IC) chips, semiconductor wafer with IC chips with durable chip pads in a number of die locations and a method of making the IC chips on the wafer. The chip may be probed for performance testing with the probe contacting the durable chip pads directly.

Abstract: A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.

Abstract: A method for forming an interconnect structure for a semiconductor device includes defining a via in a passivation layer so as expose a top metal layer in the semiconductor device. A seed layer is formed over the passivation layer, sidewalls of the via, and the top metal layer. A barrier layer is formed over an exposed portion of the seed layer, the exposed portion defined by a first patterned opening. The semiconductor device is annealed so as to cause atoms from the barrier layer to diffuse into the seed layer thereunderneath, wherein the annealing causes diffused regions of the seed layer to have an altered electrical resistivity and electrode potential with respect to undiffused regions of the seed layer.

Abstract: A method of creating a multi-layered barrier for use in an interconnect, a barrier for an interconnect, and an interconnect including the barrier are disclosed. The method includes creating the multi-layered barrier in a recess of the device terminal by use of a single electroplating chemistry to enhance protection against voiding and de-lamination due to the diffusion of copper, whether by self-diffusion or electro-migration. The barrier includes at least a first layer of nickel-rich material and a second layer of copper-rich material. The barrier enables use of higher current densities for advanced complementary metal-oxide semiconductors (CMOS) designs, and extends the reliability of current CMOS designs regardless of solder selection. Moreover, this technology is easily adapted to current methods of fabricating electroplated interconnects such as C4s.

Abstract: A method for forming an interconnect structure for a semiconductor device includes defining a via in a passivation layer so as expose a top metal layer in the semiconductor device. A seed layer is formed over the passivation layer, sidewalls of the via, and the top metal layer. A barrier layer is formed over an exposed portion of the seed layer, the exposed portion defined by a first patterned opening. The semiconductor device is annealed so as to cause atoms from the barrier layer to diffuse into the seed layer thereunderneath, wherein the annealing causes diffused regions of the seed layer to have an altered electrical resistivity and electrode potential with respect to undiffused regions of the seed layer.

Abstract: A durable chip pad for integrated circuit (IC) chips, semiconductor wafer with IC chips with durable chip pads in a number of die locations and a method of making the IC chips on the wafer. The chip may be probed for performance testing with the probe contacting the durable chip pads directly.

Abstract: A method for selective electroplating of a semiconductor input/output (I/O) pad includes forming a titanium-tungsten (TiW) layer over a passivation layer on a semiconductor substrate, the TiW layer further extending into an opening formed in the passivation layer for exposing the I/O pad, such that the TiW layer covers sidewalls of the opening and a top surface of the I/O pad. A seed layer is formed over the TiW layer, and portions of the seed layer are selectively removed such that remaining seed layer material corresponds to a desired location of interconnect metallurgy for the I/O pad. At least one metal layer is electroplated over the remaining seed layer material, using the TiW layer as a conductive electroplating medium.

Abstract: Disclosed is an improved integrated circuit structure that has internal circuitry and interconnects (e.g. C4, etc.) on an external portion of the structure. With the invention, these interconnects have a metal layer on the external portion of the structure, a first copper layer on the metal layer, a barrier layer on the copper layer, a stabilizing copper layer on the barrier layer, and a tin-based solder bump on the barrier layer. The stabilizing copper layer has a sufficient amount of copper to balance the chemical potential gradient of copper across the barrier layer and prevent copper within the first copper layer from diffusing across the barrier layer. Alternatively, a sufficient amount of copper can be included within the tin-based solder bump to prevent copper from diffusing across the barrier layer. Thus, the tin-based solder bump comprises a copper rich solder alloy.

Abstract: A method of forming wire bonds in (I/C) chips comprising: providing an I/C chip having a conductive pad for a wire bond with at least one layer of dielectric material overlying the pad; forming an opening through the dielectric material exposing a portion of said pad. Forming at least a first conductive layer on the exposed surface of the pad and on the surface of the opening. Forming a seed layer on the first conductive layer; applying a photoresist over the seed layer; exposing and developing the photoresist revealing the surface of the seed layer surrounding the opening; removing the exposed seed layer; removing the photoresist material in the opening revealing the seed layer. Plating at least one second layer of conductive material on the seed layer in the opening, and removing the first conductive layer on the dielectric layer around the opening. The invention also includes the resulting structure.

Abstract: A solder bump for bonding an electronic device to a substrate or another structure is formed by plating a high aspect ratio copper pin on a supporting structure, encapsulating the pin in a barrier material, plating a solder on the barrier material and then reflowing the solder.

Abstract: A computer controlled grinding machine programmed so as to control the machine by calculating the wellhead demand positions which takes into account the difference in height between the workpiece axis of rotation and the grinding wheel axis of rotation to produce a height adjusted value for P. The following equation is used to compute the position demand values for a crankpin of a crankshaft, namely: P=(T* cos A)+(R+r)2−((T* sin A)+H)2), where P is the eight adjusted) demand position of the grinding wheel at each instant; R is the current radius of the grinding wheel; r is the target radius for the crankpin (18); T is the throw of the crankpin around the main crankshaft axis (16); A is the angular position of the crankshaft relative to the start position; and H is the vertical height between the two axes (the height error). The value for P is typically calculated for each of 3600 angular positions during one revolution of the crankshaft.

Abstract: A method of selecting an application in a wireless device and a user location method are provided. In the method of selecting an application, specific messages are received from a wireless station. The application specific messages are specific to services provided via a wireless station transmitting the application specific messages. The application specific messages have an application specific identifier identifying a specific application and data corresponding to the specific application. It is determined whether an application is present in the wireless device that corresponds to the received application specific identifier. If it is determined that the corresponding application is absent in the wireless device, the correspondingly received data is ignored. In the user location method that is used in a wireless system, locations and user identities of users of wireless devices are registered.

Abstract: A method of selecting an application in a wireless device and a user location method are provided. In the method of selecting an application, specific messages are received from a wireless station. The application specific messages are specific to services provided via a wireless station transmitting the application specific messages. The application specific messages have an application specific identifier identifying a specific application and data corresponding to the specific application. It is determined whether an application is present in the wireless device that corresponds to the received application specific identifier. If it is determined that the corresponding application is absent in the wireless device, the correspondingly received data is ignored. In the user location method that is used in a wireless system, locations and user identities of users of wireless devices are registered.

Abstract: The present invention, in accordance with one embodiment, is directed to a method for routing electronic information to a person using personal internet protocols, instead of to a device using device internet protocols as performed by systems of the prior art. By routing electronic information to a person, the present invention enables electronic information to be transmitted to a device which is known to be in close proximity to the intended recipient. According to one embodiment, the method of the present invention comprises the step of receiving, at a home agent, electronic information addressed to a personal internet protocol address. The home agent forwards the electronic information to a foreign agent, which is coupled to the home agent via Internet. The foreign agent forwards the electronic information to a personal internet protocol agent, which is associated with the personal internet protocol address.

Abstract: A modular headset comprises a first unit that has first and second operational modes. In the first operational mode, the unit has a stand-alone functionality and serves as a wireless earpiece of a mobile phone. To this end, the first unit has Bluetooth processing means onboard. In the second mode, the first unit is connected to a second unit, the latter being an earpiece for the other ear. The second unit has processing power onboard for generating stereo audio when coupled with an MP3 player. Resources of the second unit are shared with the first unit in the second operational mode.

Abstract: A computer controlled grinding machine programmed so as to control the machine by calculating the wellhead demand positions which takes into account the difference in height between the workpiece axis of rotation and the grinding wheel axis of rotation to produce a height adjusted value for P. The following equation is used to compute the position demand values for a crankpin of a crankshaft, namely: P=(T*cos A)+{square root}(R+r)2−((T*sin A)+H)2), where P is the eight adjusted) demand position of the grinding wheel at each instant; R is the current radius of the grinding wheel; r is the target radius for the crankpin (18); T is the throw of the crankpin around the main crankshaft axis (16); A is the angular position of the crankshaft relative to the start position; and H is the vertical height between the two axes (the height error). The value for P is typically calculated for each of 3600 angular positions during one revolution of the crankshaft.