Patents by Inventor Jonathan H. Huynh

Jonathan H. Huynh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9177663
    Abstract: To maintain stability of memory array operations, a current source supplies a common source line of a memory. The magnitude of the regulation current from the source is dynamically determined based on the amount of current from the array itself through use of a feedback control signal provided by a current comparator circuit. The current comparison circuit can use either a digital or an analog implementation.
    Type: Grant
    Filed: July 18, 2013
    Date of Patent: November 3, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Jonathan H. Huynh, Sung-En Wang, Feng Pan
  • Publication number: 20150023100
    Abstract: To maintain stability of memory array operations, a current source supplies a common source line of a memory. The magnitude of the regulation current from the source is dynamically determined based on the amount of current from the array itself through use of a feedback control signal provided by a current comparator circuit. The current comparison circuit can use either a digital or an analog implementation.
    Type: Application
    Filed: July 18, 2013
    Publication date: January 22, 2015
    Inventors: Jonathan H. Huynh, Sung-En Wang, Feng Pan
  • Patent number: 8730724
    Abstract: In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—is determined from the total current passing through the population of memory cells under read conditions, as observed on a common line, for example a source line in NAND flash memory.
    Type: Grant
    Filed: August 7, 2012
    Date of Patent: May 20, 2014
    Assignee: SanDisk Technologies Inc.
    Inventors: Tien-Chien Kuo, Jonathan H. Huynh, Sung-En Wang
  • Patent number: 8710914
    Abstract: Techniques are presented for improving the wake-up response of voltage regulation circuits. A first set of techniques relate to the inputs an op-amp in a regulation circuit. In regulated operation, one input receives feedback from the regulator's output. Instead, during reset, after resetting the op-amp's output node to the supply level, this input of op-amp is instead connected to ground in order to increase the amount of tail current through the op-amp in order to more quickly bring down the op-amp's output node. A detection circuit is introduced to determine when the op-amp's input is reconnected to receive feedback. In a complementary sets of techniques, when the circuit on which the regulator is formed receives an enable signal and the output of the regulator will be needed for an operation, and when the regulator is not yet back at operating levels, its supply is temporarily shorted to the supply level.
    Type: Grant
    Filed: February 8, 2013
    Date of Patent: April 29, 2014
    Assignee: SanDisk Technologies Inc.
    Inventors: Shankar Guhados, Sung-En Wang, Feng Pan, Sagar Magia, Jonathan H. Huynh
  • Patent number: 8710907
    Abstract: A charge pump system is formed on an integrated circuit that can be connected to an external power supply. The system includes a charge pump and a clock generator circuit. The clock circuit is coupled to provide a clock output, at whose frequency the charge pump operates and generates an output voltage from an input voltage. The clock frequency is a decreasing function of the voltage level of the external power supply. This allows for reducing power consumption in the charge pump system formed on a circuit connectable to an external power supply.
    Type: Grant
    Filed: June 24, 2008
    Date of Patent: April 29, 2014
    Assignee: SanDisk Technologies Inc.
    Inventors: Qui Vi Nguyen, Feng Pan, Jonathan H. Huynh
  • Publication number: 20140043898
    Abstract: In a nonvolatile memory array that stores randomized data, the program level—the number of states per cell stored in a population of memory cells—is determined from the total current passing through the population of memory cells under read conditions, as observed on a common line, for example a source line in NAND flash memory.
    Type: Application
    Filed: August 7, 2012
    Publication date: February 13, 2014
    Inventors: Tien-Chien Kuo, Jonathan H. Huynh, Sung-En Wang
  • Patent number: 8514630
    Abstract: Techniques and corresponding circuitry are presented for the detection of wordline leakage in a memory array. In an exemplary embodiment, a capacitive voltage divider is used to translate the high voltage drop to low voltage drop that can be compared with a reference voltage to determine the voltage drop due to leakage. An on-chip self calibration method can help assure the accuracy of this technique for detecting leakage limit. In other embodiments, the current drawn by a reference array, where a high voltage is applied to the array with all wordlines non-selected, is compared to the current drawn by an array where the high voltage is applied and one or more selected wordlines. In these current based embodiments, the reference array can be a different array, or the same array as that one selected for testing.
    Type: Grant
    Filed: January 28, 2011
    Date of Patent: August 20, 2013
    Assignee: SanDisk Technologies Inc.
    Inventors: Jonathan H. Huynh, Feng Pan, Viswakiran Popuri, Marco Cazzaniga
  • Patent number: 8421524
    Abstract: Improvements in the efficiency of two charge pump designs are presented. As a charge pump switches between modes, capacitances are charged. Due to charge sharing between capacitances, inefficiencies are introduced. Techniques for reducing these inefficiencies are presented for two different charge pump designs are presented. For a clock voltage doubler type of pump, a four phase clock scheme is introduced to pre-charge the output nodes of the pump's legs. For a pump design where a set of capacitances are connected in series to supply the output during the charging phase, one or more pre-charging phases are introduced after the reset phase, but before the charging phase. In this pre-charge phase, the bottom plate of a capacitor is set to the high voltage level prior to being connected to the top plate of the preceding capacitor in the series.
    Type: Grant
    Filed: September 24, 2012
    Date of Patent: April 16, 2013
    Assignee: SanDisk Technologies Inc.
    Inventors: Feng Pan, Jonathan H. Huynh
  • Patent number: 8228739
    Abstract: A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the reference voltage is provided from the node. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.
    Type: Grant
    Filed: July 18, 2011
    Date of Patent: July 24, 2012
    Assignee: SanDisk Technologies Inc.
    Inventors: Feng Pan, Yuxin Wang, Jonathan H. Huynh, Albert Chang, Khin Htoo, Qui Vi Nguyen
  • Publication number: 20120008410
    Abstract: Techniques and corresponding circuitry are presented for the detection of wordline leakage in a memory array. In an exemplary embodiment, a capacitive voltage divider is used to translate the high voltage drop to low voltage drop that can be compared with a reference voltage to determine the voltage drop due to leakage. An on-chip self calibration method can help assure the accuracy of this technique for detecting leakage limit. In other embodiments, the current drawn by a reference array, where a high voltage is applied to the array with all wordlines non-selected, is compared to the current drawn by an array where the high voltage is applied and one or more selected wordlines. In these current based embodiments, the reference array can be a different array, or the same array as that one selected for testing.
    Type: Application
    Filed: January 28, 2011
    Publication date: January 12, 2012
    Inventors: Jonathan H. Huynh, Feng Pan, Viswakiran Popuri, Marco Cazzaniga
  • Publication number: 20110273227
    Abstract: A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the reference voltage is provided from the node. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.
    Type: Application
    Filed: July 18, 2011
    Publication date: November 10, 2011
    Inventors: Feng Pan, Yuxin Wang, Jonathan H. Huynh, Albert Chang, Khin Htoo, Qui Vi Nguyen
  • Patent number: 8004917
    Abstract: A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the node supplies the reference voltage. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.
    Type: Grant
    Filed: September 22, 2008
    Date of Patent: August 23, 2011
    Assignee: SanDisk Technologies Inc.
    Inventors: Feng Pan, Yuxin Wang, Jonathan H. Huynh, Albert Chang, Khin Htoo, Qui Vi Nguyen
  • Publication number: 20100074033
    Abstract: A circuit and corresponding method for providing a reference voltage are presented. The circuit includes a current source having a magnitude with positive temperature correlation connected to a node, and a diode element connected between the node and ground, where the reference voltage is provided from the node. The circuit also includes a variable resistance connected to receive an input indicative of the circuit temperature and through which the diode element is connected to the node. The value of the variable resistance is adjusted based upon the circuit temperature input. The circuit is useful for application as a peripheral circuitry, such as on a flash or other non-volatile memory and other circuits requiring an on-chip reference voltage source.
    Type: Application
    Filed: September 22, 2008
    Publication date: March 25, 2010
    Inventors: Feng Pan, Yuxin Wang, Jonathan H. Huynh, Albert Chang, Khin Htoo, Qui Vi Nguyen
  • Patent number: 7683700
    Abstract: A charge pump system for supplying an output voltage to a load is described. It includes a regulation circuit connected to receive the output voltage and derive an enable signal from it and multiple charge pump circuits connected in parallel to supply the output voltage. Each of the charge pump circuits is also connected to receive a clock signal and the enable signal. The system also includes one or more delay circuit elements, where a corresponding one or more, but less than all, of the charge pump circuits are connectable to receive the enable signal delayed by the corresponding delay circuit element.
    Type: Grant
    Filed: June 25, 2008
    Date of Patent: March 23, 2010
    Assignee: SanDisk Corporation
    Inventors: Jonathan H. Huynh, Qui Vi Nguyen, Feng Pang
  • Publication number: 20090322413
    Abstract: A charge pump system for supplying an output voltage to a load is described. It includes a regulation circuit connected to receive the output voltage and derive an enable signal from it and multiple charge pump circuits connected in parallel to supply the output voltage. Each of the charge pump circuits is also connected to receive a clock signal and the enable signal. The system also includes one or more delay circuit elements, where a corresponding one or more, but less than all, of the charge pump circuits are connectable to receive the enable signal delayed by the corresponding delay circuit element.
    Type: Application
    Filed: June 25, 2008
    Publication date: December 31, 2009
    Inventors: Jonathan H. Huynh, Qui Vi Nguyen, Feng Pan
  • Publication number: 20090315616
    Abstract: A charge pump system is formed on an integrated circuit that can be connected to an external power supply. The system includes a charge pump and a clock generator circuit. The clock circuit is coupled to provide a clock output, at whose frequency the charge pump operates and generates an output voltage from an input voltage. The clock frequency is a decreasing function of the voltage level of the external power supply. This allows for reducing power consumption in the charge pump system formed on a circuit connectable to an external power supply.
    Type: Application
    Filed: June 24, 2008
    Publication date: December 24, 2009
    Inventors: Qui Vi Nguyen, Feng Pan, Jonathan H. Huynh
  • Publication number: 20090302930
    Abstract: A charge pump circuit for generating an output voltage is described. The charge pump includes an output generation section and a threshold voltage cancelation section, where these sections have the same structure including a first branch, which receives a first clock signal and provides a first output, and a second branch, which receives a second clock signal and provides a second output. The charge pump circuit also includes first and second transistors, where the first and second outputs of the output generation stage are respectively connected through the first and second transistors to provide the output voltage of the charge pump, and where the first and second outputs of the threshold voltage cancellation stage are respectively connected to the control gate the first and second transistors.
    Type: Application
    Filed: June 9, 2008
    Publication date: December 10, 2009
    Inventors: Feng Pan, Jonathan H. Huynh
  • Patent number: 7586363
    Abstract: A circuit including a charge pump and regulation circuitry is described. The output of the charge pump is connected to provide a first output signal that is connectable to drive a load. A diode is connected to provide a second output signal of lower voltage from the first output signal. The regulation circuitry is connected to the second output level and is connectable to the charge pump to regulate its output. The circuit also includes a current source connectable from the second line to ground, where control circuitry connects the current source to the second line when the first line is connected to the load.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: September 8, 2009
    Assignee: SanDisk Corporation
    Inventors: Feng Pan, Jonathan H. Huynh
  • Patent number: 7586362
    Abstract: Techniques of providing a low output voltage, high current capability charge pump are given. The charge pump has multiple capacitors along with switching circuitry. In an initialization phase, the first plate of each of the capacitors is connected to receive a regulator voltage and the second plate of each capacitor is connected to ground. In a transfer phase, the capacitors are connected in series, where, for each capacitor after the first, the second plate is connected to the first plate of the preceding capacitor in the series. The output voltage of the pump is from the first plate of the last capacitor in the series. Regulation circuitry generates the regulator voltage from a reference voltage to have a value responsive to the output voltage level of the pump.
    Type: Grant
    Filed: December 12, 2007
    Date of Patent: September 8, 2009
    Assignee: SanDisk Corporation
    Inventors: Feng Pan, Jonathan H. Huynh, Qui Vi Nguyen
  • Publication number: 20090153230
    Abstract: Techniques of providing a low output voltage, high current capability charge pump are given. The charge pump has multiple capacitors along with switching circuitry. In an initialization phase, the first plate of each of the capacitors is connected to receive a regulator voltage and the second plate of each capacitor is connected to ground. In a transfer phase, the capacitors are connected in series, where, for each capacitor after the first, the second plate is connected to the first plate of the preceding capacitor in the series. The output voltage of the pump is from the first plate of the last capacitor in the series. Regulation circuitry generates the regulator voltage from a reference voltage to have a value responsive to the output voltage level of the pump.
    Type: Application
    Filed: December 12, 2007
    Publication date: June 18, 2009
    Inventors: Feng Pan, Jonathan H. Huynh, Qui Vi Nguyen