Patents by Inventor Jonathan Heffernan

Jonathan Heffernan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10798434
    Abstract: A video monitoring system can include multiple collectors to receive video beacon data from multiple video monitoring interface modules. At least one beacon stream is connected to receive data from multiple collectors. A processing module receives the beacon stream and provides a real-time event stream used for real-time data analysis and a video view stream used for long-term data analysis.
    Type: Grant
    Filed: January 19, 2018
    Date of Patent: October 6, 2020
    Assignee: Mux, Inc.
    Inventors: Adam Brown, Jonathan Dahl, Steven Heffernan, Justin Sanford, Matthew Ward, Scott Kidder, Benjamin Dodson, Alex Diehl
  • Publication number: 20190230391
    Abstract: A video monitoring system can include multiple collectors to receive video beacon data from multiple video monitoring interface modules. At least one beacon stream is connected to receive data from multiple collectors. A processing module receives the beacon stream and provides a real-time event stream used for real-time data analysis and a video view stream used for long-term data analysis.
    Type: Application
    Filed: January 19, 2018
    Publication date: July 25, 2019
    Inventors: Adam Brown, Jonathan Dahl, Steven Heffernan, Justin Sanford, Matthew Ward, Scott Kidder, Benjamin Dodson, Alex Diehl
  • Patent number: 9985173
    Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: May 29, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Peter Neil Taylor, Jonathan Heffernan, Stewart Edward Hooper, Tim Michael Smeeton
  • Patent number: 9938148
    Abstract: A method of producing nitride nanoparticles comprises reacting at least one organometallic compound, for example an alkyl metal, with at least one source of nitrogen. The reaction may involve one or more liquid phase organometallic compounds, or may involve one or more liquid phase organometallic compounds dissolved in a solvent or solvent mixture. The reaction constituents may be heated to a desired reaction temperature (for example in the range 40° C. to 300° C.).
    Type: Grant
    Filed: November 12, 2013
    Date of Patent: April 10, 2018
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Alastair James Daniel Grundy, Peter Neil Taylor, Michael Alan Schreuder, Stewart Edward Hooper, Jonathan Heffernan
  • Patent number: 9326348
    Abstract: An illumination system comprises at least two light sources (101,102,103) having different emission spectra to one another; a detection circuit (131,132,133) for sensing a light intensity using at least one of the light sources as a photosensor; and driving means (161,162,163) for driving the light source in dependence on the sensed spectral distribution of light. The emission spectrum of a light source with the smallest bandgap overlaps the emission spectrum of a light source with the second-smallest bandgap. The illumination system is possible to measure the intensity of light emitted by the light source with the smallest bandgap by putting the light source with the second-smallest bandgap in detection mode. The illumination system may also sense the spectral distribution of ambient light, to allow the output from the illumination system to be adjusted in dependence on the ambient light.
    Type: Grant
    Filed: March 23, 2008
    Date of Patent: April 26, 2016
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Rakesh Roshan, Benjamin James Hadwen, David James Montgomery, Jonathan Heffernan
  • Publication number: 20150291423
    Abstract: A method of producing nitride nanoparticles comprises reacting at least one organometallic compound, for example an alkyl metal, with at least one source of nitrogen. The reaction may involve one or more liquid phase organometallic compounds, or may involve one or more liquid phase organometallic compounds dissolved in a solvent or solvent mixture. The reaction constituents may be heated to a desired reaction temperature (for example in the range 40° C. to 300° C.).
    Type: Application
    Filed: November 12, 2013
    Publication date: October 15, 2015
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Alastair James Daniel Grundy, Peter Neil Taylor, Michael Alan Schreuder, Stewart Edward Hooper, Jonathan Heffernan
  • Publication number: 20150176810
    Abstract: A lighting device includes a transparent optical cavity having an exit surface including a specularly reflective material arranged to reflect light into the cavity, the exit surface having a plurality of apertures formed therein, a base surface including a specularly reflective material arranged to reflect light into the cavity, and at least one light receiving surface arranged relative to the base surface and configured to receive light from a light source. The plurality of apertures are arranged to maximize at least one of uniformity, angular distribution, efficiency or luminous intensity of light exiting the exit surface, and a distribution of light received at the light receiving surface is altered by at least one of a combination of the exit surface and the base surface, or the light receiving surface.
    Type: Application
    Filed: July 22, 2013
    Publication date: June 25, 2015
    Inventors: Sarah Anne Mitchell, David James Montgomery, Peter John Roberts, Jonathan Heffernan, James Rowland Suckling, Samir Rihani
  • Patent number: 8975618
    Abstract: A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of Eg1, and a second semiconductor material with an energy difference between valence and conduction bands of Eg2, wherein Eg1 and Eg2 are different from one another. The device further includes an energy selectively transmissive interface connecting the first and second semiconductor materials.
    Type: Grant
    Filed: March 30, 2011
    Date of Patent: March 10, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: James Andrew Robert Dimmock, Stephen Day, Matthias Kauer, Jonathan Heffernan
  • Patent number: 8945964
    Abstract: A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: February 3, 2015
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Peter Neil Taylor, Jonathan Heffernan
  • Publication number: 20150014587
    Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.
    Type: Application
    Filed: September 16, 2014
    Publication date: January 15, 2015
    Inventors: Peter Neil TAYLOR, Jonathan HEFFERNAN, Stewart Edward HOOPER, Tim Michael SMEETON
  • Patent number: 8900489
    Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.
    Type: Grant
    Filed: July 22, 2011
    Date of Patent: December 2, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Peter Neil Taylor, Jonathan Heffernan, Stewart Edward Hooper, Tim Michael Smeeton
  • Patent number: 8778781
    Abstract: A method of growing a thin film comprises growing a thin film by conformally forming at least one layer over a substrate having structures extending from a surface of the substrate, whereby the or each layer is formed over the surface of the substrate and over the structures extending from the surface. The thickness of the conformal layer, or the sum of the thicknesses of the conformal layers, is at least half the average spacing of the structures, and; at least one of the height of the structures, the average spacing of the structures and the size of the smallest dimension of the structures is set so as to provide an enhanced growth rate for the or each conformal layer (compared to the growth rate over a planar substrate).
    Type: Grant
    Filed: July 24, 2009
    Date of Patent: July 15, 2014
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Christian Lang, Ying Jun James Huang, Thomas Heinz-Helmut Altebaeumer, Stephen Day, Jonathan Heffernan
  • Patent number: 8552417
    Abstract: The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: October 8, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Peter Neil Taylor, Jonathan Heffernan
  • Patent number: 8362553
    Abstract: A method includes forming elongate structures on a first substrate, such that the material composition of each elongate structure varies along its length so as to define first and second physically different sections in the elongate structures. First and second physically different devices are then defined in the elongate structures. Alternatively, the first and second physically different sections may be defined in the elongate structures after they have been fabricated. The elongate structures may be encapsulated and transferred to a second substrate. The invention provides an improved method for the formation of a circuit structure that requires first and second physically different devices to be provided on a common substrate. In particular, only one transfer step is necessary.
    Type: Grant
    Filed: April 12, 2011
    Date of Patent: January 29, 2013
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Thomas Heinz-Helmut Altebaeumer, Stephen Day, Jonathan Heffernan
  • Publication number: 20120248413
    Abstract: A resonant tunneling device includes a first semiconductor material with an energy difference between valence and conduction bands of Eg1, and a second semiconductor material with an energy difference between valence and conduction bands of Eg2, wherein Eg1 and Eg2 are different from one another. The device further includes an energy selectively transmissive interface connecting the first and second semiconductor materials.
    Type: Application
    Filed: March 30, 2011
    Publication date: October 4, 2012
    Inventors: James Andrew Robert Dimmock, Stephen Day, Matthias Kauer, Jonathan Heffernan
  • Patent number: 8258524
    Abstract: A light emitting diode device which includes at least one light emitting diode, a heat-sink chassis having a surface upon which the at least one light emitting diode is mounted, and a waveguide having one end coupled to the at least one light emitting diode for receiving light therefrom. The waveguide has another end which includes a light extraction and redistribution region, and the waveguide is configured to guide light received from the at least one light emitting diode away from the heat-sink chassis and towards the light extraction and redistribution region. The light extraction and redistribution region is configured to extract and redistribute the light from the waveguide.
    Type: Grant
    Filed: January 26, 2010
    Date of Patent: September 4, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Wei-Sin Tan, Valerie Berryman-Bousquet, Tong Zhang, Jonathan Heffernan
  • Patent number: 8173908
    Abstract: A method of fabricating a device structure, comprises: forming an insulating layer (3b) over a first set of devices disposed over a substrate (3); forming one or more vias in the insulating layer; disposing a second set of devices (6) over the insulating layer, wherein devices of the second set comprise respective electrical contacts (6a) and are disposed over the insulating layer (3b) such that a side on which a contact (6a) can be accessed faces the substrate (3); and forming one or more electrical contacts between the first set of devices and the second set of devices (6) through the via(s). The second set of devices and at least one via are positioned such that one or more of the vias lies at least partially within the footprint of two devices, each belonging to a different device layer.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: May 8, 2012
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Thomas Heinz-Helmut Altebaeumer, Stephen Day, Christian Lang, Jonathan Heffernan
  • Publication number: 20120025139
    Abstract: The present application provides a new composition of matter in the form of a new compound semiconductor family of the type group Zn-(II)-III-N, where III denotes one or more elements in Group III of the periodic table and (II) denotes one or more optional further elements in Group II of the periodic table. Members of this family include for example, ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN or ZnAlGaInN. This type of compound semiconductor material is not previously known in the prior art. The composition of the new Zn-(II)-III-N compound semiconductor material can be controlled in order to tailor its band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated. The products of this invention are useful as constituents of optoelectronic devices such as solar cells, light emitting diodes, laser diodes and as a light emitting phosphor material for LEDs and emissive EL displays.
    Type: Application
    Filed: July 21, 2011
    Publication date: February 2, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Peter Neil TAYLOR, Jonathan HEFFERNAN, Stewart Edward HOOPER, Tim Michael SMEETON
  • Publication number: 20120025146
    Abstract: The present application provides nitride semiconductor nanoparticles, for example nanocrystals, made from a new composition of matter in the form of a novel compound semiconductor family of the type group II-III-N, for example ZnGaN, ZnInN, ZnInGaN, ZnAlN, ZnAlGaN, ZnAlInN and ZnAlGaInN. This type of compound semiconductor nanocrystal is not previously known in the prior art. The invention also discloses II-N semiconductor nanocrystals, for example ZnN nanocrystals, which are a subgroup of the group II-III-N semiconductor nanocrystals. The composition and size of the new and novel II-III-N compound semiconductor nanocrystals can be controlled in order to tailor their band-gap and light emission properties. Efficient light emission in the ultraviolet-visible-infrared wavelength range is demonstrated.
    Type: Application
    Filed: July 22, 2011
    Publication date: February 2, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Peter Neil Taylor, Jonathan Heffernan, Stewart Edward Hooper, Tim Michael Smeeton
  • Publication number: 20120018774
    Abstract: A method of manufacturing a nitride nanoparticle comprises manufacturing the nitride nanostructure from constituents including: a material containing metal, silicon or boron, a material containing nitrogen, and a capping agent having an electron-accepting group for increasing the quantum yield of the nitride nanostructure. Nitride nanoparticles, for example nitride nanocrystals, having a photoluminescence quantum yield of at least 1%, and up to 20% or greater, may be obtained.
    Type: Application
    Filed: January 26, 2010
    Publication date: January 26, 2012
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Peter Neil Taylor, Jonathan Heffernan