Abstract: A system includes a first robotic arm and a second robotic arm, each coupled to a support structure configured to support an object. The first robotic arm includes a first end effector having a first shape, and the second robotic arm is separate from the first robotic arm and includes a second end effector having a second shape that mirrors the first shape when observed from a common perspective. The first end effector and/or the second end effector is asymmetric about at least one two-dimensional plane of that is perpendicular to an end effector plane of the at least one of the first end effector or the second end effector. At least one processor is operatively coupled to the first robotic arm and the second robotic arm, and configured to perform coordinated body work on the object using the first robotic arm and the second robotic arm.

Abstract: A system includes a first robotic arm and a second robotic arm, each coupled to a support structure configured to support an object. The first robotic arm includes a first end effector having a first shape, and the second robotic arm is separate from the first robotic arm and includes a second end effector having a second shape that mirrors the first shape when observed from a common perspective. The first end effector and/or the second end effector is asymmetric about at least one two-dimensional plane of that is perpendicular to an end effector plane of the at least one of the first end effector or the second end effector. At least one processor is operatively coupled to the first robotic arm and the second robotic arm, and configured to perform coordinated body work on the object using the first robotic arm and the second robotic arm.

Abstract: A system includes a first robotic arm and a second robotic arm, each coupled to a support structure configured to support an object. The first robotic arm includes a first end effector having a first shape, and the second robotic arm is separate from the first robotic arm and includes a second end effector having a second shape that mirrors the first shape when observed from a common perspective. The first end effector and/or the second end effector is asymmetric about at least one two-dimensional plane of that is perpendicular to an end effector plane of the at least one of the first end effector or the second end effector. At least one processor is operatively coupled to the first robotic arm and the second robotic arm, and configured to perform coordinated body work on the object using the first robotic arm and the second robotic arm.

Abstract: A fleet node management system may include a metadata store, a plurality of fleet nodes, and one or more metadata mutation devices. The metadata store may be configured to store dynamic metadata. The plurality of fleet nodes may be configured to determine, based on a gossip protocol, whether to continue performance of a function that uses a local version of the metadata. The one or more metadata mutation devices may be configured to determine, based on a global state of the fleet nodes, whether to modify the dynamic metadata for the fleet nodes.

Abstract: Optical sensor devices, and methods of manufacturing the same, are described herein. In an embodiment, a monolithic optical sensor device includes a semiconductor substrate having a trench, with a photodetector region under said trench. An optical filter is formed in the trench and over at least a portion of the photodetector region. One or more metal structures extend above a top surface of said optical filter. The trench, photodetector region and optical filter are formed as part of a front-end-of-line (FEOL) semiconductor fabrication process. The one or more metal structures are formed as part of a back-end-of-line (BEOL) semiconductor fabrication process.

Abstract: A method for forming multiple resistors on a substrate. The method initially includes providing a first resistor on the substrate. A first dielectric layer is deposited, patterned, and selectively etched over the first resistor. Second resistor material is provided over the first dielectric layer. Furthermore, landing pad material is provided over the second resistor material. The landing pad material and the second resistor material are then selectively etched. The selective etching forms contacts for the first resistor in a first region, and forms a second resistor and associated contacts in a second region.

Abstract: A method of modifying a layer of thin film composite material to achieve one or more desired properties for the thin film layer which cannot be achieved by heat treatment at all practical temperatures of operation allowable by particular integrated circuit processes. In particular, the thin film composite material is subjected to an ion implantation process. Depending on the doping species, the doping concentration, the doping energy, and other ion implantation parameters, one or more properties of the deposited thin film resistive layer can be modified. Such properties may include electrical, optical, thermal and physical properties. For instance, the sheet resistance and/or the temperature coefficient of resistance of the thin film composite material may be increased or decreased by appropriately implanting ions into the material. The ion implantation can be applied globally in order to modify one or more properties of the entire deposited thin film composite layer.