Abstract: A memory device in an integrated circuit is provided, including an input/output (I/O) circuit, a first memory segment and a second memory segment that separated from the first memory segment in a first direction, a first pair of data lines on a first side of the integrated circuit, extending in the first direction and configured to couple the first memory segment to the I/O circuit, and a second pair of data lines separated from the first pair of data lines in a second direction, different from the first direction, on a second side, opposite to the first side, of the integrated circuit, and configured to couple the second memory segment to the I/O circuit. A first width of the first pair of data lines is different from a second width of the second pair of data lines.

Abstract: Some implementations are directed to a wireless receiver. In some implementations, the wireless receiver may include a receiver body encompassing one or more antenna elements, a cover removably coupled to the receiver body, and a mounting bracket removably coupled to the receiver body. In some implementations, at least one of the one or more antenna elements, the cover, or the mounting bracket is movable with respect to the receiver body in order to align the wireless receiver with a signal path.

Abstract: Hybrid hydrogels comprised of decellularized extracellular matrix (dECM) and biocompatible conductive nanomaterials are disclosed. The hybrid hydrogels provide a more instructive microenvironment for proper cell and tissue development. The mechanical and electrical properties of the hydrogels can be tuned. The hydrogels can be used in bioinks for printing tissues in a high-throughput manner, and engineered tissues generated using the hybrid hydrogels can be utilized to assess biological activity of drug candidates.

Abstract: A circuit and method for a sense amplifier for sensing the charge stored when a select signal couples a memory cell to the sense amplifier. A pull up voltage and a pull down voltage are instantaneously supplied to the sense amplifier to sense the small signal differential input on the complementary bit lines and to simultaneously restore the value stored in the memory cell. A differential output signal generator circuit is provided to instantaneously supply the pull up and pull down voltages. In another preferred embodiment the signal generator provides the pull up and pull down voltages at a first level and subsequently increases the pull up voltage to a voltage greater than the positive supply voltage and decreases the pull down voltage. A method of sensing is disclosed wherein the sense and restore actions are performed instantaneously to provide memory cell sensing with greater tolerance of device mismatches.

Abstract: A circuit and method for a sense amplifier for sensing the charge stored when a select signal couples a memory cell to the sense amplifier. A pull up voltage and a pull down voltage are instantaneously supplied to the sense amplifier to sense the small signal differential input on the complementary bit lines and to simultaneously restore the value stored in the memory cell. A differential output signal generator circuit is provided to instantaneously supply the pull up and pull down voltages. In another preferred embodiment the signal generator provides the pull up and pull down voltages at a first level and subsequently increases the pull up voltage to a voltage greater than the positive supply voltage and decreases the pull down voltage. A method of sensing is disclosed wherein the sense and restore actions are performed instantaneously to provide memory cell sensing with greater tolerance of device mismatches.

Abstract: A temperature-dependent oscillator includes a first current source, wherein a first current provided by the first current source has a positive temperature coefficient, a second current source serially connected to the first current source, wherein a second current provided by the second current source has a negative temperature coefficient, and a capacitor serially connected to the first current source and parallel connected to the second current source.

Abstract: A temperature-sensitive current source includes a first MOS transistor having a source coupled to a first voltage; a second MOS transistor having a source coupled to the first voltage, and a gate coupled to a gate of the first MOS transistor, such that a current output at a drain of the second MOS transistor mirrors a current passing across the first MOS transistor; and a resistor coupled between the source and a drain of the first MOS transistor in parallel, such that the current passing across the first MOS transistor is substantially larger than a current passing through the resistor, wherein the first and second MOS transistors operate in a saturation mode, such that the output current at the drain of the second MOS transistor is responsive to a change of temperature.

Abstract: A temperature-dependent oscillator includes a first current source, wherein a first current provided by the first current source has a positive temperature coefficient, a second current source serially connected to the first current source, wherein a second current provided by the second current source has a negative temperature coefficient, and a capacitor serially connected to the first current source and parallel connected to the second current source.

Abstract: A temperature-sensitive current source includes a first MOS transistor having a source coupled to a first voltage; a second MOS transistor having a source coupled to the first voltage, and a gate coupled to a gate of the first MOS transistor, such that a current output at a drain of the second MOS transistor mirrors a current passing across the first MOS transistor; and a resistor coupled between the source and a drain of the first MOS transistor in parallel, such that the current passing across the first MOS transistor is substantially larger than a current passing through the resistor, wherein the first and second MOS transistors operate in a saturation mode, such that the output current at the drain of the second MOS transistor is responsive to a change of temperature.