Patents by Inventor Jonathan Huynh

Jonathan Huynh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150228351
    Abstract: To maintain stability of memory array operations, a supplemental current can supply a common source line of a memory array so that the combined current from the memory array and supplemental current is at least a minimum regulation current level. When enabled for sensing operations, a driver circuit maintains the common source line's voltage level. A current subtractor circuit determines the difference between a reference current and a current proportional to the current flowing from the array, where the reference current is proportional to the minimum regulation current. The difference current is then mirrored by a self-adjusting current loop and supplied to the common source line to maintain its current level.
    Type: Application
    Filed: February 7, 2014
    Publication date: August 13, 2015
    Applicant: SanDisk Technologies Inc.
    Inventors: Sung-En Wang, Jonathan Huynh, Steve Choi, Jongmin Park
  • Publication number: 20150214964
    Abstract: A circuit for providing a plurality of clock signals of differing frequencies includes: a phase locked loop section including a first voltage controller oscillator, connected to receive a reference clock value and generate therefrom a first voltage level, wherein the first voltage controller oscillator receives the first voltage level and generates therefrom a first clock signal; and one or more second voltage controller oscillators, each connected to receive the first voltage level, a corresponding trim value and a corresponding control voltage and derive therefrom a corresponding second clock signal.
    Type: Application
    Filed: January 14, 2015
    Publication date: July 30, 2015
    Inventors: Jonathan Huynh, Sung-En Wang, Steve Choi, Jongmin Park
  • Patent number: 9083231
    Abstract: Techniques are presented for improving the efficiency of charge pumps. A charge pump, or a stage of a charge pump, provides its output through a pass gate. For example, this could be a charge pump of a voltage doubler type, where the output is supplied through pass gate transistors whose gates are connected to receive the output of an auxiliary section, also of a voltage doubler type of design. The waveforms provided to the gates of the pass gate transistors are modified so that their low values are offset to a higher value to take into account the threshold voltage of the pass gate transistors. In a voltage doubler based example, this can be implemented by way of introducing diodes into each leg of the auxiliary section.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: July 14, 2015
    Assignee: SanDisk Technologies Inc.
    Inventors: Feng Pan, Jonathan Huynh, Sung-En Wang, Bo Lei
  • Publication number: 20150162825
    Abstract: A charge pump is regulated based up its output level. The regulation circuitry adjusts the frequency of the pump's clock based on feedback from pump's output. The pump's clock signal is generated by an oscillator whose frequency depends on a reference voltage level. The reference voltage level is dependent upon a regulation signal. In an example, a transistor whose gate is controlled by the regulation level is part of a series of elements in voltage divider, where the reference value is taken from a node of the divider.
    Type: Application
    Filed: December 9, 2013
    Publication date: June 11, 2015
    Applicant: SanDisk Technologies Inc.
    Inventors: Jonathan Huynh, Steve Choi, Jongmin Park
  • Publication number: 20150091637
    Abstract: Techniques are presented for improving the efficiency of charge pumps. A charge pump, or a stage of a charge pump, provides its output through a pass gate. For example, this could be a charge pump of a voltage doubler type, where the output is supplied through pass gate transistors whose gates are connected to receive the output of an auxiliary section, also of a voltage doubler type of design. The waveforms provided to the gates of the pass gate transistors are modified so that their low values are offset to a higher value to take into account the threshold voltage of the pass gate transistors. In a voltage doubler based example, this can be implemented by way of introducing diodes into each leg of the auxiliary section.
    Type: Application
    Filed: September 30, 2013
    Publication date: April 2, 2015
    Applicant: SanDisk Technologies Inc.
    Inventors: Feng Pan, Jonathan Huynh, Sung-En Wang, Bo Lei
  • Patent number: 8699247
    Abstract: A charge pump system can provide multiple regulated output levels, including several concurrently, in an arrangement that can reduce the area and power consumption of such a high voltage generation system. The charge pump system can be dynamically reconfigurable based on output requirements. When output level is low, but required for a large AC, DC load, the system is configured in parallel to share the load. When a higher output is required, such as for a programming in a non-volatile memory, the system is configured in serial to generate the desired high output level. The exemplary embodiment uses all of the pump units in each operation and, hence, is able to be optimized for smaller pump area and less power consumption, while still delivering the same pump ability as larger, more power consuming arrangements.
    Type: Grant
    Filed: September 9, 2011
    Date of Patent: April 15, 2014
    Assignee: SanDisk Technologies Inc.
    Inventors: Qui Vi Nguyen, Jonathan Huynh
  • Patent number: 8514628
    Abstract: A charge pump system uses a dynamic switching approach, where the pump connections are independent of the load for each output. One large pump is designed to be shared between all of the outputs for use during the ramp up during recovery, with each output level also have one designated pump to maintain its level when under regulation. Each small pump is designed with capability that can maintain its output at its regulation level. Each of these pumps can be tailored to the corresponding output level, such as the number of stages being higher in the pump to supply the higher output level. The large pump unit is constructed to be ample to provide sufficient drive to be able to assist in the ramp up phase for all of the outputs and has as many switches needed to connect the pump with all the needed outputs.
    Type: Grant
    Filed: September 22, 2011
    Date of Patent: August 20, 2013
    Assignee: SanDisk Technologies Inc.
    Inventors: Qui Vi Nguyen, Khin Htoo, Jonathan Huynh
  • Patent number: 8432732
    Abstract: Techniques and corresponding circuitry are presented for the detection of wordline leakage in a memory array. In an exemplary embodiment, a capacitive voltage divider is used to translate the high voltage drop to low voltage drop that can be compared with a reference voltage to determine the voltage drop due to leakage. An on-chip self calibration method can help assure the accuracy of this technique for detecting leakage limit.
    Type: Grant
    Filed: July 9, 2010
    Date of Patent: April 30, 2013
    Assignee: SanDisk Technologies Inc.
    Inventors: Yan Li, Dana Lee, Jonathan Huynh
  • Publication number: 20130077411
    Abstract: A charge pump system uses a dynamic switching approach, where the pump connections are independent of the load for each output. One large pump is designed to be shared between all of the outputs for use during the ramp up during recovery, with each output level also have one designated pump to maintain its level when under regulation. Each small pump is designed with capability that can maintain its output at its regulation level. Each of these pumps can be tailored to the corresponding output level, such as the number of stages being higher in the pump to supply the higher output level. The large pump unit is constructed to be ample to provide sufficient drive to be able to assist in the ramp up phase for all of the outputs and has as many switches needed to connect the pump with all the needed outputs.
    Type: Application
    Filed: September 22, 2011
    Publication date: March 28, 2013
    Inventors: Qui Vi Nguyen, Khin Htoo, Jonathan Huynh
  • Publication number: 20130063118
    Abstract: A charge pump system can provide multiple regulated output levels, including several concurrently, in an arrangement that can reduce the area and power consumption of such a high voltage generation system. The charge pump system can be dynamically reconfigurable based on output requirements. When output level is low, but required for a large AC, DC load, the system is configured in parallel to share the load. When a higher output is required, such as for a programming in a non-volatile memory, the system is configured in serial to generate the desired high output level. The exemplary embodiment uses all of the pump units in each operation and, hence, is able to be optimized for smaller pump area and less power consumption, while still delivering the same pump ability as larger, more power consuming arrangements.
    Type: Application
    Filed: September 9, 2011
    Publication date: March 14, 2013
    Inventors: Qui Vi Nguyen, Jonathan Huynh
  • Patent number: 8294509
    Abstract: Improvements in the efficiency of two charge pump designs are presented. As a charge pump switches between modes, capacitances are charged. Due to charge sharing between capacitances, inefficiencies are introduced. Techniques for reducing these inefficiencies are presented for two different charge pump designs are presented. For a clock voltage doubler type of pump, a four phase clock scheme is introduced to pre-charge the output nodes of the pump's legs. For a pump design where a set of capacitances are connected in series to supply the output during the charging phase, one or more pre-charging phases are introduced after the reset phase, but before the charging phase. In this pre-charge phase, the bottom plate of a capacitor is set to the high voltage level prior to being connected to the top plate of the preceding capacitor in the series.
    Type: Grant
    Filed: December 20, 2010
    Date of Patent: October 23, 2012
    Assignee: SanDisk Technologies Inc.
    Inventors: Feng Pan, Jonathan Huynh
  • Publication number: 20120154023
    Abstract: Improvements in the efficiency of two charge pump designs are presented. As a charge pump switches between modes, capacitances are charged. Due to charge sharing between capacitances, inefficiencies are introduced. Techniques for reducing these inefficiencies are presented for two different charge pump designs are presented. For a clock voltage doubler type of pump, a four phase clock scheme is introduced to pre-charge the output nodes of the pump's legs. For a pump design where a set of capacitances are connected in series to supply the output during the charging phase, one or more pre-charging phases are introduced after the reset phase, but before the charging phase. In this pre-charge phase, the bottom plate of a capacitor is set to the high voltage level prior to being connected to the top plate of the preceding capacitor in the series.
    Type: Application
    Filed: December 20, 2010
    Publication date: June 21, 2012
    Inventors: Feng Pan, Jonathan Huynh
  • Publication number: 20120008384
    Abstract: Techniques and corresponding circuitry are presented for the detection of wordline leakage in a memory array. In an exemplary embodiment, a capacitive voltage divider is used to translate the high voltage drop to low voltage drop that can be compared with a reference voltage to determine the voltage drop due to leakage. An on-chip self calibration method can help assure the accuracy of this technique for detecting leakage limit.
    Type: Application
    Filed: July 9, 2010
    Publication date: January 12, 2012
    Inventors: Yan Li, Dana Lee, Jonathan Huynh