Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model and provides the AR/VR image to an AR/VR viewing device for display.

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model and provides the AR/VR image to an AR/VR viewing device for display.

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: Provided are optimized scatterometry techniques for evaluating a diffracting structure. In one embodiment, a method includes computing a finite-difference derivative of a field matrix with respect to first parameters (including a geometric parameter of the diffracting structure), computing an analytic derivative of the Jones matrix with respect to the field matrix, computing a derivative of the Jones matrix with respect to the first parameters, and computing a finite-difference derivative of the Jones matrix with respect to second parameters (including a non-geometric parameter). In one embodiment, a method includes generating a transfer matrix having Taylor Series approximations for elements, and decomposing the field matrix into two or more smaller matrices based on symmetry between the incident light and the diffracting structure.

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user.

Abstract: Provided are optimized scatterometry techniques for evaluating a diffracting structure. In one embodiment, a method includes computing a finite-difference derivative of a field matrix with respect to first parameters (including a geometric parameter of the diffracting structure), computing an analytic derivative of the Jones matrix with respect to the field matrix, computing a derivative of the Jones matrix with respect to the first parameters, and computing a finite-difference derivative of the Jones matrix with respect to second parameters (including a non-geometric parameter). In one embodiment, a method includes generating a transfer matrix having Taylor Series approximations for elements, and decomposing the field matrix into two or more smaller matrices based on symmetry between the incident light and the diffracting structure.