Patents by Inventor Jonathan Isaac

Jonathan Isaac has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making high resistance cermet film
    Patent number: 4071426
    Abstract: A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.
    Type: Grant
    Filed: November 26, 1976
    Date of Patent: January 31, 1978
    Assignee: RCA Corporation
    Inventors: Harry Louis Pinch, Benjamin Abeles, Jonathan Isaac Gittleman
  • Semiconductor absorber for photothermal converter
    Patent number: 4037014
    Abstract: A layer of electrically insulating material is coated on a reflector. Granular semiconductor particles are uniformly dispersed in the layer of electrically insulating material. The combination forms an efficient absorber for high temperature photothermal conversion of solar energy.
    Type: Grant
    Filed: October 21, 1975
    Date of Patent: July 19, 1977
    Assignee: RCA Corporation
    Inventor: Jonathan Isaac Gittleman
  • High resistance cermet film and method of making the same
    Patent number: 4010312
    Abstract: A cermet film includes metal particles in an insulator with the metal particles having an average diameter of from about 30A to about 120A. The cermet film has a high resistivity, and low temperature coefficient of resistivity, and is stable under electric fields of up to 10.sup.5 volts/cm. The cermet film can be formed by co-sputtering the metal and the insulator onto a substrate. The sputtered cermet film is then annealed in a reducing atmosphere whereby its resistivity is increased without a corresponding change in its temperature coefficient of resistivity.
    Type: Grant
    Filed: January 23, 1975
    Date of Patent: March 1, 1977
    Assignee: RCA Corporation
    Inventors: Harry Louis Pinch, Benjamin Abeles, Jonathan Isaac Gittleman