Abstract: A motion control system that includes a support motion control system and a body motion control system. The body motion control system includes passive motion control components and active motion control components.

Abstract: Particulate additives that may be useful in mitigating fluid loss and/or as bridging agents or diverting agents in subterranean treatment fluids such as drilling fluids. In some embodiments, the particulate additives include a polymeric material and calcium carbonate disposed on at least a portion of the outer surface of the polymer core wherein the particulates have a particle size (d50) of from about 2 ?m to about 1600 ?m in diameter. In some embodiments, the methods include providing a treatment fluid that includes the base fluid and the particulate additives and introducing the treatment fluid into at least a portion of a subterranean formation.

Abstract: An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.

Abstract: A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

Abstract: A method of producing an encapsulated module of interconnected opto-electronic devices which comprises: forming a patterned anode layer; forming a layer of opto-electronically active material over the patterned anode layer; forming a patterned cathode layer over the layer of opto-electronically active material, to provide a device array of opto-electronically active cells on the substrate; selectively removing portions of the layer of opto-electronically active material so as to expose minor portions of the anodes; forming a patterned interconnect layer on an encapsulating sheet in a pattern to define an array of interconnect pads; and laminating the patterned encapsulating sheet over the array of opto-electronically active cells whereby the exposed anode portions are interconnected with the cathodes of adjacent cells by the interconnect pads and the interconnected cells are encapsulated by the encapsulating sheet.

Abstract: An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.

Abstract: A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

Abstract: The present invention provides a method of fabricating a top-gate organic semiconductor transistor comprising: providing a substrate; depositing a source and drain electrode over the substrate; depositing an organic semiconductor material in a channel between the source and drain electrode and over at least a portion of the source and drain electrodes; depositing a dielectric material over the organic semiconductor material; depositing a gate electrode over the dielectric material and organic semiconductor material in the channel; removing a portion of the dielectric material and organic semiconductor material, wherein the gate electrode acts as a mask to shield the underlying organic semiconductor material and dielectric material during the step of removing.

Abstract: A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

Abstract: An active matrix organic optical device comprising a plurality of organic thin film transistors and a plurality of pixels disposed on a common substrate, wherein a common bank layer is provided for the organic thin film transistors and the pixels, the common bank layer defining a plurality of wells, wherein some of the wells contain the organic semiconducting material of the organic thin film transistors therein and others of the wells contain organic optically active material of the pixels therein.

Abstract: A method of forming an organic thin film transistor comprising: providing a structure comprising source and drain electrodes with a channel region therebetween, a gate electrode, and a dielectric layer disposed between the source and drain electrodes and the gate electrode; and patterning the dielectric layer using the source and drain electrodes as a mask to form a region of dielectric material in the channel region which is thinner than regions of dielectric material adjacent the channel region.

Abstract: A method of producing an encapsulated module of interconnected opto-electronic devices which comprises: forming a patterned anode layer; forming a layer of opto-electronically active material over the patterned anode layer; forming a patterned cathode layer over the layer of opto-electronically active material, to provide a device array of opto-electronically active cells on the substrate; selectively removing portions of the layer of opto-electronically active material so as to expose minor portions of the anodes; forming a patterned interconnect layer on an encapsulating sheet in a pattern to define an array of interconnect pads; and laminating the patterned encapsulating sheet over the array of opto-electronically active cells whereby the exposed anode portions are interconnected with the cathodes of adjacent cells by the interconnect pads and the interconnected cells are encapsulated by the encapsulating sheet.

Abstract: A method of forming an organic thin film transistor comprising source and drain electrodes with a channel region therebetween, a gate electrode, a dielectric layer disposed between the source and drain electrodes and the gate electrode, and an organic semiconductor disposed in at least the channel region between the source and drain electrodes, said method comprising: seeding a surface in the channel region with crystallization sites prior to deposition of the organic semiconductor; and depositing the organic semiconductor onto the seeded surface whereby the organic semiconductor crystallizes at the crystallization sites forming crystalline domains in the channel region.

Abstract: A method is provided to produce an opto-electronic device comprising a substrate, a first electrode layer, a second electrode layer of opposite polarity to said first electrode layer, any interlayers and, between said first and second electrode layers, a first functional material in interfacial contact with a second functional material, wherein the first functional material has the structure of a laterally porous film and the second functional material is a film disposed over and interpenetrating with the film of the first functional material.

Abstract: A method of preparing an efficient photoresponsive device includes the steps of providing a first electrode on a substrate, providing a layer of an organic material including a blend of at least two semiconductive polymers having different electrode affinities and/or different ionization potentials over the first electrode, providing a second electrode over the layer of organic material, at least one of the electrodes being a transparent or semi-transparent, to form a photoresponsive device, and thermally annealing the photoresponsive device.

Abstract: A method of preparing an efficient photoresponsive device includes the steps of providing a first electrode on a substrate, providing a layer of an organic material including a blend of at least two semiconductive polymers having different electrode affinities and/or different ionization potentials over the first electrode, providing a second electrode over the layer of organic material, at least one of the electrodes being a transparent or semi-transparent, to form a photoresponsive device, and thermally annealing the photoresponsive device.

Abstract: A method of preparing an efficient photoresponsive device includes the steps of providing a first electrode on a substrate, providing a layer of an organic material including a blend of at least two semiconductive polymers having different electrode affinities and/or different ionization potentials over the first electrode, providing a second electrode over the layer of organic material, at least one of the electrodes being a transparent or semi-transparent, to form a photoresponsive device, and thermally annealing the photoresponsive device.

Abstract: A method of preparing an efficient photoresponsive device includes the steps of providing a first electrode on a substrate, providing a layer of an organic material including a blend of at least two semiconductive polymers having different electrode affinities and/or different ionization potentials over the first electrode, providing a second electrode over the layer of organic material, at least one of the electrodes being a transparent or semi-transparent, to form a photoresponsive device, and thermally annealing the photoresponsive device.