Patents by Inventor Jonathan J. Strand
Jonathan J. Strand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240403158Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: ApplicationFiled: May 23, 2024Publication date: December 5, 2024Inventors: Sukneet Singh Basuta, Shashank Bangalore Lakshman, Jonathan D. Harms, Jonathan J. Strand
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Publication number: 20240386933Abstract: The present disclosure includes apparatuses, methods, and systems for adjusting a sensing voltage in memory. An embodiment includes a memory having a group of memory cells, wherein a sub-group of the memory cells of the group remain programmed to a same data state, and circuitry configured to determine an amount of charge associated with the memory cells of the sub-group and adjust a voltage used to sense a data state of the memory cells of the group based, at least in part, on the determined amount of charge.Type: ApplicationFiled: May 13, 2024Publication date: November 21, 2024Inventors: Daniele Vimercati, Jonathan J. Strand, Giovanni Mazzeo
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Patent number: 12040038Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: GrantFiled: December 20, 2022Date of Patent: July 16, 2024Assignee: Micron Technology, Inc.Inventors: Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman
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Patent number: 12019506Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: GrantFiled: September 24, 2019Date of Patent: June 25, 2024Assignee: Micron Technology, Inc.Inventors: Sukneet Singh Basuta, Shashank Bangalore Lakshman, Jonathan D. Harms, Jonathan J. Strand
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Publication number: 20230395115Abstract: Methods, systems, and devices for robust functionality for memory management associated with high-temperature storage are described. A memory device may apply a pattern (e.g., an imprint conditioning or deletion pattern) to at least a portion of memory cells of a memory array associated with a memory device before or after a power state procedure. The memory device may determine the pattern from various possible patterns, where the pattern may indicate a data state for each memory cell of the portion of memory cells. The pattern may indicate a same data state for each memory cell, an alternating data state for each memory cell, or an asymmetric switching pattern over a plurality of cycles, or any combination thereof. The memory device may write a respective logic value to at least some of the one or more memory cells of the portion of memory cells according to the pattern.Type: ApplicationFiled: June 2, 2022Publication date: December 7, 2023Inventors: Angelo Visconti, Jonathan J. Strand
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Patent number: 11749330Abstract: Methods, systems, and devices for charge leakage detection for memory system reliability are described. In accordance with examples as disclosed herein, a memory system may employ memory management techniques configured to identify precursors of charge leakage in a memory device, and take preventative action based on such identified precursors. For example, a memory system may be configured to perform a leakage detection evaluation for a memory array, which may include various biasing and evaluation operations to identify whether a leakage condition of the memory array may affect operational reliability. Based on such an evaluation, the memory device, or a host device in communication with the memory device, may take various preventative measures to avoid operational failures of the memory device or host device that may result from ongoing operation of a memory array associated with charge leakage, thereby improving reliability of the memory system.Type: GrantFiled: November 7, 2022Date of Patent: September 5, 2023Assignee: Micron Technology, Inc.Inventors: Angelo Visconti, Riccardo Pazzocco, Jonathan J. Strand, Kevin T. Majerus
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Publication number: 20230253064Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: ApplicationFiled: March 31, 2023Publication date: August 10, 2023Inventors: Shashank Bangalore Lakshman, Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta
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Publication number: 20230187010Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: ApplicationFiled: December 20, 2022Publication date: June 15, 2023Inventors: Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman
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Patent number: 11631473Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: GrantFiled: August 11, 2021Date of Patent: April 18, 2023Assignee: Micron Technology, Inc.Inventors: Shashank Bangalore Lakshman, Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta
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Publication number: 20230114735Abstract: Methods, systems, and devices for charge leakage detection for memory system reliability are described. In accordance with examples as disclosed herein, a memory system may employ memory management techniques configured to identify precursors of charge leakage in a memory device, and take preventative action based on such identified precursors. For example, a memory system may be configured to perform a leakage detection evaluation for a memory array, which may include various biasing and evaluation operations to identify whether a leakage condition of the memory array may affect operational reliability. Based on such an evaluation, the memory device, or a host device in communication with the memory device, may take various preventative measures to avoid operational failures of the memory device or host device that may result from ongoing operation of a memory array associated with charge leakage, thereby improving reliability of the memory system.Type: ApplicationFiled: November 7, 2022Publication date: April 13, 2023Inventors: Angelo Visconti, Riccardo Pazzocco, Jonathan J. Strand, Kevin T. Majerus
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Patent number: 11557371Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: GrantFiled: April 27, 2021Date of Patent: January 17, 2023Assignee: Micron Technology, Inc.Inventors: Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman
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Patent number: 11514968Abstract: Methods, systems, and devices for charge leakage detection for memory system reliability are described. In accordance with examples as disclosed herein, a memory system may employ memory management techniques configured to identify precursors of charge leakage in a memory device, and take preventative action based on such identified precursors. For example, a memory system may be configured to perform a leakage detection evaluation for a memory array, which may include various biasing and evaluation operations to identify whether a leakage condition of the memory array may affect operational reliability. Based on such an evaluation, the memory device, or a host device in communication with the memory device, may take various preventative measures to avoid operational failures of the memory device or host device that may result from ongoing operation of a memory array associated with charge leakage, thereby improving reliability of the memory system.Type: GrantFiled: March 26, 2020Date of Patent: November 29, 2022Assignee: Micron Technology, Inc.Inventors: Angelo Visconti, Riccardo Pazzocco, Jonathan J. Strand, Kevin T. Majerus
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Publication number: 20220199155Abstract: Methods, systems, and devices for imprint recovery for memory arrays are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: ApplicationFiled: December 27, 2021Publication date: June 23, 2022Inventors: Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman, Jonathan D. Harms
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Publication number: 20220044759Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: ApplicationFiled: August 11, 2021Publication date: February 10, 2022Inventors: Shashank Bangalore Lakshman, Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta
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Patent number: 11217303Abstract: Methods, systems, and devices for imprint recovery for memory arrays are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: GrantFiled: September 24, 2019Date of Patent: January 4, 2022Assignee: Micron Technology, Inc.Inventors: Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman, Jonathan D. Harms
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Publication number: 20210319843Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: ApplicationFiled: April 27, 2021Publication date: October 14, 2021Inventors: Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman
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Publication number: 20210304805Abstract: Methods, systems, and devices for charge leakage detection for memory system reliability are described. In accordance with examples as disclosed herein, a memory system may employ memory management techniques configured to identify precursors of charge leakage in a memory device, and take preventative action based on such identified precursors. For example, a memory system may be configured to perform a leakage detection evaluation for a memory array, which may include various biasing and evaluation operations to identify whether a leakage condition of the memory array may affect operational reliability. Based on such an evaluation, the memory device, or a host device in communication with the memory device, may take various preventative measures to avoid operational failures of the memory device or host device that may result from ongoing operation of a memory array associated with charge leakage, thereby improving reliability of the memory system.Type: ApplicationFiled: March 26, 2020Publication date: September 30, 2021Inventors: Angelo Visconti, Riccardo Pazzocco, Jonathan J. Strand, Kevin T. Majerus
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Patent number: 11094394Abstract: Methods, systems, and devices for imprint recovery management for memory systems are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: GrantFiled: September 24, 2019Date of Patent: August 17, 2021Assignee: Micron Technology, Inc.Inventors: Shashank Bangalore Lakshman, Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta
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Patent number: 10998080Abstract: Methods, systems, and devices for imprint recovery for memory cells are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: GrantFiled: September 24, 2019Date of Patent: May 4, 2021Assignee: Micron Technology, Inc.Inventors: Jonathan D. Harms, Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman
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Publication number: 20210090641Abstract: Methods, systems, and devices for imprint recovery for memory arrays are described. In some cases, memory cells may become imprinted, which may refer to conditions where a cell becomes predisposed toward storing one logic state over another, resistant to being written to a different logic state, or both. Imprinted memory cells may be recovered using a recovery or repair process that may be initiated according to various conditions, detections, or inferences. In some examples, a system may be configured to perform imprint recovery operations that are scaled or selected according to a characterized severity of imprint, an operational mode, environmental conditions, and other factors. Imprint management techniques may increase the robustness, accuracy, or efficiency with which a memory system, or components thereof, can operate in the presence of conditions associated with memory cell imprinting.Type: ApplicationFiled: September 24, 2019Publication date: March 25, 2021Inventors: Jonathan J. Strand, Sukneet Singh Basuta, Shashank Bangalore Lakshman, Jonathan D. Harms