Abstract: Apparatuses and methods associated with silicon photonic chips, are disclosed herein. In some embodiments, a quarter wave plate (QWP) is provided to a silicon photonic chip to convert a first linearly polarized mode (e.g., TE mode) optical beam from a laser disposed on the silicon photonic chip, into a combination of orthogonal polarization modes optical beam, and to convert or contribute in converting a reflection of the combined polarized modes optical beam into a second linearly polarized mode (e.g., TM) optical beam with polarization orthogonal to the first. The optical beam is rotated relative to an axis of the QWP, or the QWP and its axis are rotated relative to a polarization axis of the optical beam. Other embodiments are also described and claimed.

Abstract: There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.

Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.

Abstract: Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.

Abstract: Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a substrate, a waveguide disposed above the substrate, a phase change layer disposed above the waveguide, and a heater disposed above the phase change layer. The waveguide has a modifiable refractive index based at least in part on a state of a phase change material included in the phase change layer. The phase change material of the phase change layer is in a first state of a set of states, and the waveguide has a first refractive index determined based on the first state of the phase change material. The heater is to generate heat to transform the phase change material to a second state of the set of states, and the waveguide has a second refractive index determined based on the second state of the phase change material. Other embodiments may also be described and claimed.

Abstract: There is disclosed in one example a fiberoptic communication device, including: a modulator to modulate data onto a laser pulse; and a semiconductor laser source including an active optical waveguide to provide optical gain and support an optical mode, the laser source further including a V-shaped current channel superimposed on the optical waveguide, and disposed to feed the active optical waveguide with electrical current along its length, the current channel having a proximate end to the optical mode, the proximate end having a width substantially matching a diameter of the optical mode, and a removed end from the optical mode, wherein the removed end is substantially wider than the proximate end.

Abstract: Embodiments of the present disclosure are directed towards a laser device with a stepped graded index separate confinement heterostructure (SCH), in accordance with some embodiments. One embodiment includes a substrate area, and an active region adjacent to the substrate area. The active region includes an SCH layer, which comprises a first portion and a second portion adjacent to the first portion. A composition of the first portion is graded to provide a first conduction band energy increase over a distance from multiple quantum wells (MQW) to a p-side of a laser device junction. A composition of the second portion is graded to provide a second conduction band energy increase over the MQW to the p-side distance. The first conduction band energy increase is different than the second conduction band energy increase. Other embodiments may be described and/or claimed.

Abstract: An optical circuit includes solid state photonics. The optical circuit includes a phased array of solid state waveguides that perform beamsteering on an optical signal. The optical circuit includes a modulator to modulate a bit sequence onto the carrier frequency of the optical signal, and the beamsteered signal includes the modulated bit sequence. The optical circuit includes a photodetector to detect a reflection of the beamsteered optical signal. The optical circuit autocorrelates the reflection signal with the bit sequence to generate a processed signal.

Abstract: Apparatuses and methods associated with silicon photonic chips, are disclosed herein. In some embodiments, a quarter wave plate (QWP) is provided to a silicon photonic chip to convert a first linearly polarized mode (e.g., TE mode) optical beam from a laser disposed on the silicon photonic chip, into a combination of orthogonal polarization modes optical beam, and to convert or contribute in converting a reflection of the combined polarized modes optical beam into a second linearly polarized mode (e.g., TM) optical beam with polarization orthogonal to the first. The optical beam is rotated relative to an axis of the QWP, or the QWP and its axis are rotated relative to a polarization axis of the optical beam. Other embodiments are also described and claimed.

Abstract: A transmission circuit includes an array of subarrays of emitters with quasi-periodic spacing. A first subarray of emitters emits a source signal, and a second subarray of emitters emits the source signal. The first and second subarrays are separated by a subarray spacing that quasi-periodic, wherein the spacing between different subarrays is different. The quasi-periodic subarray spacing is to cause constructive interference of a main lobe of the emissions from the subarrays, and to cause non-constructive interference of sidelobes of the emissions. The spacing between emitters in the subarrays can vary from one subarray to another.

Abstract: A transmission circuit includes an array of subarrays of emitters with quasi-periodic spacing. A first subarray of emitters emits a source signal, and a second subarray of emitters emits the source signal. The first and second subarrays are separated by a subarray spacing that quasi-periodic, wherein the spacing between different subarrays is different. The quasi-periodic subarray spacing is to cause constructive interference of a main lobe of the emissions from the subarrays, and to cause non-constructive interference of sidelobes of the emissions. The spacing between emitters in the subarrays can vary from one subarray to another.

Abstract: Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.

Abstract: Embodiments of the present disclosure may relate to a hybrid silicon distributed feed-back (DFB) laser, wherein light is to propagate through the DFB laser along a length of the DFB laser. The DFB laser may include a mesa with a current channel that extends from the first side of the mesa to the second side of the mesa. At a first location along the length of the DFB laser, the current channel may have a first width and/or the mesa may have a second width. At a second location along the length of the DFB laser, the current channel may have a third width and/or the mesa may have a fourth width as measured in a direction perpendicular to the length of the DFB laser. Other embodiments may be described and/or claimed.

Abstract: An optical circuit includes solid state photonics. The optical circuit includes a phased array of solid state waveguides that perform beamsteering on an optical signal. The optical circuit includes a modulator to modulate a bit sequence onto the carrier frequency of the optical signal, and the beamsteered signal includes the modulated bit sequence. The optical circuit includes a photodetector to detect a reflection of the beamsteered optical signal. The optical circuit autocorrelates the reflection signal with the bit sequence to generate a processed signal.

Abstract: An optical circuit includes solid state photonics. The optical circuit includes a phased array of solid state waveguides that perform beamsteering on an optical signal. The optical circuit includes a modulator to modulate a bit sequence onto the carrier frequency of the optical signal, and the beamsteered signal includes the modulated bit sequence. The optical circuit includes a photodetector to detect a reflection of the beamsteered optical signal. The optical circuit autocorrelates the reflection signal with the bit sequence to generate a processed signal.

Abstract: An optical circuit includes solid state photonics. The optical circuit includes a phased array of solid state waveguides that perform beamsteering on an optical signal. The optical circuit includes a modulator to modulate a bit sequence onto the carrier frequency of the optical signal, and the beamsteered signal includes the modulated bit sequence. The optical circuit includes a photodetector to detect a reflection of the beamsteered optical signal. The optical circuit autocorrelates the reflection signal with the bit sequence to generate a processed signal.

Abstract: A solid state photonics circuit having a liquid crystal (LC) layer for beam steering. The LC layer can provide tuning of an array of waveguides by controlling the application of voltage to the liquid crystal. The application of voltage to the liquid crystal can be controlled to perform beam steering with the light signal based on different tuning in each of the waveguides of the array. The waveguides are disposed in a substrate having an oxide or other insulating layer with an opening. The opening in the oxide layer exposes a portion of a path of the array of waveguides. The waveguides are exposed to the liquid crystal through the oxide opening, which allows the voltage changes to the liquid crystal to tune the optical signals in the waveguides.

Abstract: Technologies for generating a broadband optical output include a plurality of narrowband optical sources formed in a silicon substrate to generate a narrowband optical output, a plurality of input optical waveguides to route the narrowband optical output, an optical multiplexer formed in the silicon substrate to reflect the routed narrowband optical output, and an output optical waveguide to collect the reflected narrowband optical output to generate the broadband optical output. The output optical waveguide may route the broadband optical output to an output of the photonic integrated circuit.

Abstract: A slab of a rib waveguide includes geometric disruption features along a direction of propagation of the waveguide. The geometric disruption features scatter optical modes other than the fundamental mode in the slab without significantly impacting the fundamental optical mode that propagates primarily in the rib waveguide. The rib waveguide has a width to constrain the fundamental mode, and the fundamental mode primarily propagates through the rib waveguide, with some of the energy propagated via the slab. When the slab includes edges that are wider than the rib waveguide and smaller than the substrate on which the rib waveguide and slab are integrated, the slab can propagate optical modes other than the fundamental mode, such as higher-order modes. The geometric disruptions scatter the non-fundamental optical modes from the slab. The geometric disruptions can include serration features in one or both edges of the slab.

Abstract: Technologies for generating a broadband optical output include a plurality of narrowband optical sources formed in a silicon substrate to generate a narrowband optical output, a plurality of input optical waveguides to route the narrowband optical output, an optical multiplexer formed in the silicon substrate to reflect the routed narrowband optical output, and an output optical waveguide to collect the reflected narrowband optical output to generate the broadband optical output. The output optical waveguide may route the broadband optical output to an output of the photonic integrated circuit.