Patents by Inventor Jonathan Kluth

Jonathan Kluth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Source/drain doping technique for ultra-thin-body SOI MOS transistors
    Patent number: 6403433
    Abstract: An ultra-large-scale integrated (ULSI) circuit includes MOSFETs on an SOI substrate. The MOSFETs include elevated source and drain regions. The elevated source and drain regions are amorphized before doping. Neutral ion species can be utilized to amorphize the elevated source and drain region. Dopants are activated in a low-temperature rapid thermal anneal process.
    Type: Grant
    Filed: September 16, 1999
    Date of Patent: June 11, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Bin Yu, Jonathan Kluth, Emi Ishida