Abstract: A thruster has a first stage and a second stage. The first stage is a plasma source that outputs a plasma. The second stage is an accelerator. In one embodiment, the second stage is a plasma accelerator that accelerates the plasma. In another embodiment, the second stage is an ion accelerator that accelerates the ions from the plasma.

Abstract: A thruster has a first stage and a second stage. The first stage is a plasma source that outputs a plasma. The second stage is an accelerator. In one embodiment, the second stage is a plasma accelerator that accelerates the plasma. In another embodiment, the second stage is an ion accelerator that accelerates the ions from the plasma.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

Abstract: A thruster for a micro-satellite is disclosed. The thruster includes a cathode composed of a propellant material and an anode composed of ablative material. The thruster includes a housing having a proximate end and an opposite distal end having a thrust channel. The housing holds the anode and the cathode. A pulsed voltage source is coupled between the cathode and the anode causing current sufficient to create ablation of the anode and a plasma jet including ablated particles from the anode to be emitted from the thrust channel.

Abstract: A thruster has a first stage and a second stage. The first stage is a plasma source that outputs a plasma. The second stage is an accelerator. In one embodiment, the second stage is a plasma accelerator that accelerates the plasma. In another embodiment, the second stage is an ion accelerator that accelerates the ions from the plasma.

Abstract: A thruster for a micro-satellite is disclosed. The thruster includes a cathode composed of a propellant material and an anode composed of ablative material. The thruster includes a housing having a proximate end and an opposite distal end having a thrust channel. The housing holds the anode and the cathode. A pulsed voltage source is coupled between the cathode and the anode causing current sufficient to create ablation of the anode and a plasma jet including ablated particles from the anode to be emitted from the thrust channel.

Abstract: This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.

Abstract: This disclosure provides systems, methods, and apparatus related to blocking macroparticles in deposition processes utilizing plasmas. In one aspect, an apparatus includes a cathode, a substrate holder, a first magnet, a second magnet, and a structure. The cathode is configured to generate a plasma. The substrate holder is configured to hold a substrate. The first magnet is disposed proximate a first side of the cathode. The second magnet is disposed proximate a second side of the substrate holder. A magnetic field exists between the first magnet and the second magnet and a flow of the plasma substantially follows the magnetic field. The structure is disposed between the second side of the cathode and the first side of the substrate holder and is positioned proximate a region where the magnetic field between the first magnet and the second magnet is weak.