Patents by Inventor Jonathan L. Kennedy

Jonathan L. Kennedy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • BICMOS-based transceiver for millimeter wave frequency applications
    Patent number: 10382083
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: August 13, 2019
    Assignee: INTEGRATED DEVICE TECHNOLOGY, INC.
    Inventors: Andrea Betti-Berutto, Sushil Kumar, Shawn Parker, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner
  • GAAS/SIGE-BICMOS-BASED TRANSCEIVER SYSTEM-IN-PACKAGE FOR E-BAND FREQUENCY APPLICATIONS
    Publication number: 20180375543
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Application
    Filed: August 30, 2018
    Publication date: December 27, 2018
    Inventors: Andrea BETTI-BERUTTO, Sushil KUMAR, Shawn PARKER, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner
  • GAAS/SIGE-BICMOS-based transceiver system-in-package for E-band frequency applications
    Patent number: 10075207
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifier. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Grant
    Filed: May 2, 2016
    Date of Patent: September 11, 2018
    Assignee: INTEGRATED DEVICE TECHNOLOGY, INC.
    Inventors: Andrea Betti-Berutto, Sushil Kumar, Shawn Parker, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner
  • GAAS/SIGE-BICMOS-Based Transceiver System-in-Package for E-Band Frequency Applications
    Publication number: 20160323008
    Abstract: An e-band transceiver includes a transmitter circuit and a receiver circuit. The transmitter circuit includes a surface mounted technology (SMT) module on which is mounted a silicon-germanium (SiGe) bipolar plus CMOS (BiCMOS) converter, a gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) output amplifier coupled to the SiGe BiCMOS converter, and a microstrip/waveguide interface coupled to the GaAs pHEMT output amplifer. The receiver circuit of the e-band transceiver includes a receiver-side SMT module on which is mounted a receiver-side SiGe BiCMOS converter, a GaAs pHEMT low noise amplifier coupled to the receiver-side SiGe BiCMOS converter, and a receiver-side microstrip/waveguide interface coupled to the receiver-side GaAs pHEMT low noise amplifier.
    Type: Application
    Filed: May 2, 2016
    Publication date: November 3, 2016
    Inventors: Andrea Betti-Berutto, Sushil Kumar, Shawn Parker, Jonathan L. Kennedy, Christopher Saint, Michael Shaw, James Little, Jeff Illgner
  • Multistage modulation architecture and method in a radio
    Patent number: 6915117
    Abstract: In a multiple stage transmitter, and analog signal is modulated and mixed to produce a radio frequency output. A separate mixing frequency signal is provided to each stage. A single frequency synthesizer is used rather than a plurality of frequency synthesizers. In a two-stage system, first and second dividers each receive the output of the frequency synthesizer and deliver a mixing signal to the first and second stages respectively. The modulus of each divider may be selected to minimize spurious signals.
    Type: Grant
    Filed: May 3, 2001
    Date of Patent: July 5, 2005
    Assignee: International Business Machines Corporation
    Inventors: Paul P. Chominski, Jonathan L. Kennedy, Lawrence E. Larson, Joshua C. Park
  • Multistage modulation architecture and method in a radio
    Publication number: 20020164965
    Abstract: In a multiple stage transmitter, and analog signal is modulated and mixed to produce a radio frequency output. A separate mixing frequency signal is provided to each stage. A single frequency synthesizer is used rather than a plurality of frequency synthesizers. In a two-stage system, first and second dividers each receive the output of the frequency synthesizer and deliver a mixing signal to the first and second stages respectively. The modulus of each divider may be selected to minimize spurious signals.
    Type: Application
    Filed: May 3, 2001
    Publication date: November 7, 2002
    Inventors: Paul P. Chominski, Jonathan L. Kennedy, Lawrence E. Larson, Joshua C. Park