Abstract: A thin diamond film bonded to a diamond substrate made by the process of heating a diamond substrate inside a vacuum chamber to about 500° C., cooling the diamond substrate, coating a first surface of the diamond substrate with chromium, depositing an initial layer of palladium, heating the diamond substrate, allowing the chromium and the diamond substrate to form a chemical bond, inter-diffusing the adhesion layer of chromium and the initial layer of palladium, cooling, depositing palladium, placing a shadow mask, degassing the vacuum, depositing a tin layer, assembling the tin layer, heating the tin layer, melting the tin layer, and bonding the thin diamond film to the diamond substrate. A thin diamond film bonded to a diamond substrate comprising a thin diamond film, a layer of chromium, palladium, tin, and a diamond substrate.

Abstract: A device having: a substrate having a dielectric surface; a gate electrode; a drain electrode; a source electrode having a conductive contact and a two-dimensional material edge; and a dielectric material between the source and the gate. The source is adjacent to the gate. The drain electrode is not laterally between the edge and the gate electrode, and the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge. The edge does not contact any other component of the device. The gate, drain, and source are not in electrical contact with each other. There is a line of sight or electron path from the edge to the drain electrode.

Abstract: A thin diamond film bonded to a diamond substrate made by the process of heating a diamond substrate inside a vacuum chamber to about 500° C., cooling the diamond substrate, coating a first surface of the diamond substrate with chromium, depositing an initial layer of palladium, heating the diamond substrate, allowing the chromium and the diamond substrate to form a chemical bond, inter-diffusing the adhesion layer of chromium and the initial layer of palladium, cooling, depositing palladium, placing a shadow mask, degassing the vacuum, depositing a tin layer, assembling the tin layer, heating the tin layer, melting the tin layer, and bonding the thin diamond film to the diamond substrate. A thin diamond film bonded to a diamond substrate comprising a thin diamond film, a layer of chromium, palladium, tin, and a diamond substrate.

Abstract: A thin diamond film bonded to a diamond substrate made by the process of heating a diamond substrate inside a vacuum chamber to about 500° C., cooling the diamond substrate, coating a first surface of the diamond substrate with chromium, depositing an initial layer of palladium, heating the diamond substrate, allowing the chromium and the diamond substrate to form a chemical bond, inter-diffusing the adhesion layer of chromium and the initial layer of palladium, cooling, depositing palladium, placing a shadow mask, degassing the vacuum, depositing a tin layer, assembling the tin layer, heating the tin layer, melting the tin layer, and bonding the thin diamond film to the diamond substrate. A thin diamond film bonded to a diamond substrate comprising a thin diamond film, a layer of chromium, palladium, tin, and a diamond substrate.

Abstract: A device having: a substrate having a dielectric surface; a gate electrode; a drain electrode; a source electrode having a conductive contact and a two-dimensional material edge; and a dielectric material between the source and the gate. The source is adjacent to the gate. The drain electrode is not laterally between the edge and the gate electrode, and the distance from the drain electrode to the edge is greater than the distance from the gate electrode to the edge. The edge does not contact any other component of the device. The gate, drain, and source are not in electrical contact with each other. There is a line of sight or electron path from the edge to the drain electrode.

Abstract: A method of producing electrons via photoemission comprising providing diamond doped p-type with boron, treating a surface of the diamond by exposing it to atomic hydrogen inside an ultrahigh vacuum chamber, illuminating the surface with photons, and extracting the photoemitted electrons. A chemically stable visible light photoemission electron source comprising a diamond film having a surface terminated with hydrogen and a light source.

Abstract: A method of producing electrons via photoemission comprising providing diamond, treating a surface of the diamond by exposing it to atomic hydrogen inside an ultrahigh vacuum chamber, illuminating the surface with photons, and extracting the photoemitted electons. A chemically stable visible light photoemission electron source comprising a diamond film having a surface terminated with hydrogen and a light source.

Abstract: A thin diamond film bonded to a diamond substrate made by the process of heating a diamond substrate inside a vacuum chamber to about 500° C., cooling the diamond substrate, coating a first surface of the diamond substrate with chromium, depositing an initial layer of palladium, heating the diamond substrate, allowing the chromium and the diamond substrate to form a chemical bond, inter-diffusing the adhesion layer of chromium and the initial layer of palladium, cooling, depositing palladium, placing a shadow mask, degassing the vacuum, depositing a tin layer, assembling the tin layer, heating the tin layer, melting the tin layer, and bonding the thin diamond film to the diamond substrate. A thin diamond film bonded to a diamond substrate comprising a thin diamond film, a layer of chromium, palladium, tin, and a diamond substrate.

Abstract: This disclosure concerns bonding a thin film of diamond to a second thick diamond substrate in a way that does not cause the exposed (un-bonded) diamond surface to become contaminated by the bonding process or when the bonded diamond is held at high temperature for many hours in vacuum.

Abstract: This disclosure concerns bonding a thin film of diamond to a second thick diamond substrate in a way that does not cause the exposed (un-bonded) diamond surface to become contaminated by the bonding process or when the bonded diamond is held at high temperature for many hours in vacuum.

Abstract: A method of producing electrons via photoemission comprising providing diamond doped p-type with boron, treating a surface of the diamond by exposing it to atomic hydrogen inside an ultrahigh vacuum chamber, illuminating the surface with photons, and extracting the photoemitted electons. A chemically stable visible light photoemission electron source comprising a diamond film having a surface terminated with hydrogen and a light source.

Abstract: A method of making an integrally gated carbon nanotube field ionization device comprising forming a first insulator layer on a first side of a substrate, depositing a conductive gate layer on the first insulator layer, forming a cavity in the substrate by etching a second side of the substrate to near the first insulator layer, wherein the second side is opposite the first side and wherein a portion of the first insulator is over the cavity, etching an aperture in the portion of the first insulator layer and the conductive gate layer to form an aperture sidewall, depositing a second insulator layer removing the second insulator layer from the top surface, depositing a metallization layer over the second insulator layer, depositing a catalyst layer on the metallization layer and growing a carbon nanotube from the catalyst layer.

Abstract: Described herein is a field ionization and electron impact ionization device consisting of carbon nanotubes with microfabricated integral gates that is capable of producing short pulses of ions.

Abstract: Described herein is a field ionization and electron impact ionization device consisting of carbon nanotubes with microfabricated integral gates that is capable of producing short pulses of ions.

Abstract: A method of making an integrally gated carbon nanotube field ionization device comprising forming a first insulator layer on a first side of a substrate, depositing a conductive gate layer on the first insulator layer, forming a cavity in the substrate by etching a second side of the substrate to near the first insulator layer, wherein the second side is opposite the first side and wherein a portion of the first insulator is over the cavity, etching an aperture in the portion of the first insulator layer and the conductive gate layer to form an aperture sidewall, depositing a second insulator layer, removing the second insulator layer from the top surface, depositing a metallization layer over the second insulator layer, depositing a catalyst layer on the metallization layer and growing a carbon nanotube from the catalyst layer.

Abstract: Large increases in field emission current can be achieved when operating carbon nanotubes in substantial pressures of hydrogen, especially when the nanotubes were contaminated. Integrally gated carbon nanotube field emitter arrays were operated without special pre-cleaning in 10?6 Torr or greater of hydrogen to produce orders of magnitude enhancement in emission. For a cNTFEA intentionally degraded by oxygen, the operation in hydrogen resulted in a 340-fold recovery in emission.

Abstract: An apparatus and method for regulating the emission current from a single (macroscopic) field emitter, from groups of emitters within a large (microscopic) array, or from each cell within an array is described. The apparatus includes an additional aperture, fabricated at each field emitter array cell, to create and electron energy filter. The filter aperture of the electron energy filter is similar to the gate aperture but located above or in front of the gate aperture, and is held at a positive potential lower than the gate. The filter allows only those electrons with energy greater than some minimum (the cutoff energy) to pass through. A current-limiting circuit is placed in series with the gate aperture, limiting the total current of electrons that do not pass through the filter. Thus, emission from low energy states is limited without limiting emission from states near the Fermi level.

Abstract: An apparatus and method for regulating the emission current from a single (macroscopic) field emitter, from groups of emitters within a large (microscopic) array, or from each cell within an array is described. The apparatus includes an additional aperture, fabricated at each field emitter array cell, to create and electron energy filter. The filter aperture of the electron energy filter is similar to the gate aperture but located above or in front of the gate aperture, and is held at a positive potential lower than the gate. The filter allows only those electrons with energy greater than some minimum (the cutoff energy) to pass through. A current-limiting circuit is placed in series with the gate aperture, limiting the total current of electrons that do not pass through the filter. Thus, emission from low energy states is limited without limiting emission from states near the Fermi level.

Abstract: A field emitter is disclosed comprising a graded electron affinity surface ayer. The graded electron affinity layer provides for increased transconductance, reduced energy distribution of emitted electrons, reduced noise and increased uniformity in its operation.

Abstract: Structures having a controlled three-dimensional geometry are deposited by lectrostatically focused deposition using charged particle beam and gaseous precursors, or polarizable precursors with or without a charged particle beam. At least one apertured electrode is electrically biased with respect to the substrate surface. The resulting electrostatic field and field gradient focuses the charged particle beam or polarizable gaseous precursor molecules, and controls the three-dimensional geometry of the deposited structure. By this method, an array including many deposited structures may be simultaneously deposited on a single substrate. Thus, the disclosed method provides a fact and simple way of fabricating one or more arrays of three-dimensional structures. The method is particularly useful in the fabrication of arrays of sharp-tipped, cone-shaped conductive structures, such as field emitter tips and contacts.