Abstract: A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.

Abstract: A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.

Abstract: To deposit optical quality films by PECVD (Plasma Enhanced Chemical Vapor Deposition), a six-dimensional space wherein five dimensions thereof correspond to five respective independent variables of which a set of four independent variables relate to the flow-rate of respective gases, a fifth independent variable relates to total pressure, and a six dimension relates to observed FTIR characteristics is first created. Then an optical film is deposited while maintaining three of the set of four independent variables substantially constant as well as the fifth independent variable, and varying a fourth of the set of four independent variables to obtain desired characteristics in the sixth dimension.

Abstract: A method for making an integrated photonic device involves depositing buffer, core and cladding layers on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.

Abstract: A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predetermined level. The deposited film is then subjected to a post deposition heat treatment at a temperature selected to optimize the mechanical properties without affecting the optical properties. Finally, the observed FTIR characteristics of the deposited film are monitored to produce a film having the desired optical and mechanical properties. This technique permits the production of high quality optical films with reduced stress.

Abstract: A method is disclosed for making an integrated photonic device having buffer, core and cladding layers deposited on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600° C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.

Abstract: A method of making optical quality films is described. A silica film is deposited on a wafer by PECVD (Plasma Enhanced Chemical Vapor Deposition). The deposited film is then subjected to a first heat treatment to reduce optical absorption, wafer warp, and compressive stress. A second film is deposited. This step is then followed by a second heat treatment to reduce optical absorption, wafer warp and tensile stress. The two heat treatments have similar temperature profiles.

Abstract: A method is disclosed for depositing an optical quality silica film on a wafer by PECVD. The flows rates for a raw material gas, an oxidation gas, a carrier gas, and a dopant gas are first set at predetermined levels. The total deposition pressure is set at a predetermined level. The deposited film is then subjected to a post deposition heat treatment at a temperature selected to optimize the mechanical properties without affecting the optical properties. Finally, the observed FTIR characteristics of the deposited film are monitored to produce a film having the desired optical and mechanical properties. This technique permits the production of high quality optical films with reduced stress.

Abstract: To deposit optical quality films by PECVD (Plasma Enhanced Chemical Vapour Deposition), a six-dimensional space wherein five dimensions thereof correspond to five respective independent variables of which a set of four independent variables relate to the flow-rate of respective gases, a fifth independent variable relates to total pressure, and a six dimension relates to observed FTIR characteristics is first created. Then an optical film is deposited while maintaining three of the set of four independent variables substantially constant as well as the fifth independent variable, and varying a fourth of the set of four independent variables to obtain desired characteristics in the sixth dimension.

Abstract: A method of depositing an optical quality silica film on a substrate is described wherein the film is formed on the substrate by plasma enhanced chemical vapor deposition (PECVD) in the presence of reactive gases while controlling the total pressure of the gases. The as-deposited film is then subjected to a low temperature treatment between 400° to 1200° C. to minimize the presence of contaminant compounds in the film.