Abstract: Semiconductor memory devices and methods of operating the same are provided. The method of operation may include the steps of selecting a ferroelectric memory cell for a read operation, coupling a first pulse signal to interrogate the selected ferroelectric memory cell, the selected ferroelectric memory cell outputting a memory signal to a bit-line in response to the first pulse signal, coupling the memory signal to a first input of a sense amplifier via the bit-line, electrically isolating the sense amplifier from the selected ferroelectric memory cell, and enabling the sense amplifier for sensing after the sense amplifier is electrically isolated from the selected ferroelectric memory cell. Other embodiments are also disclosed.

Abstract: Semiconductor memory devices and methods of operating the same are provided. The method of operation may include the steps of selecting a ferroelectric memory cell for a read operation, coupling a first pulse signal to interrogate the selected ferroelectric memory cell, the selected ferroelectric memory cell outputting a memory signal to a bit-line in response to the first pulse signal, coupling the memory signal to a first input of a sense amplifier via the bit-line, electrically isolating the sense amplifier from the selected ferroelectric memory cell, and enabling the sense amplifier for sensing after the sense amplifier is electrically isolated from the selected ferroelectric memory cell. Other embodiments are also disclosed.

Abstract: Semiconductor memory devices and methods of operating the same are provided. The method of operation may include the steps of selecting a ferroelectric memory cell for a read operation, coupling a first pulse signal to interrogate the selected ferroelectric memory cell, the selected ferroelectric memory cell outputting a memory signal to a bit-line in response to the first pulse signal, coupling the memory signal to a first input of a sense amplifier via the bit-line, electrically isolating the sense amplifier from the selected ferroelectric memory cell, and enabling the sense amplifier for sensing after the sense amplifier is electrically isolated from the selected ferroelectric memory cell. Other embodiments are also disclosed.

Abstract: Semiconductor memory devices and methods of operating the same are provided. The method of operation may include the steps of selecting a ferroelectric memory cell for a read operation, coupling a first pulse signal to interrogate the selected ferroelectric memory cell, the selected ferroelectric memory cell outputting a memory signal to a bit-line in response to the first pulse signal, coupling the memory signal to a first input of a sense amplifier via the bit-line, electrically isolating the sense amplifier from the selected ferroelectric memory cell, and enabling the sense amplifier for sensing after the sense amplifier is electrically isolated from the selected ferroelectric memory cell. Other embodiments are also disclosed.

Abstract: A method for reducing power in an SRAM is achieved by applying a first voltage to all bitlines of a section of the SRAM in standby operation and applying a second voltage to all the bitlines of a section of the SRAM in normal operation. The first voltage is not greater than the second voltage.

Abstract: An SRAM with reduced power consumption comprising N SRAM cells and peripheral circuitry that enables writing and reading any of the N SRAM cells. The number of cells, N, is a whole number. The voltage applied to the N SRAM cells is higher than the voltage applied to the peripheral circuitry.

Abstract: An embodiment of the invention provides a circuit for reducing power in memory cells. The input of the circuit is connected to the wordline of the memory cells. When the wordline is active, the output of the circuit applies a voltage near VDD to the positive voltage supply node of the memory cells. When the wordline is inactive, the output of the circuit applies a voltage that is reduced by at least one Vt from VDD to the positive voltage supply node of the memory cells.

Abstract: An IC layout design process and system involves placing an adjustable capacitor cell having a plurality of sub-cells, each with a polysilicon shape disposed over a corresponding active area shape. The polysilicon shapes are electrically coupled to a first power rail and the active area shapes are electrically coupled to a second power rail. The sub-cells of the adjustable capacitor cell are operable to be modified to satisfy a density measurement associated with the IC's fabrication flow.

Abstract: An IC layout design process and system involves placing an adjustable capacitor cell having a plurality of sub-cells, each with a polysilicon shape disposed over a corresponding active area shape. The polysilicon shapes are electrically coupled to a first power rail and the active area shapes are electrically coupled to a second power rail. The sub-cells of the adjustable capacitor cell are operable to be modified to satisfy a density measurement associated with the IC's fabrication flow.