Abstract: A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

Abstract: A method anneals one or more diamonds. The method provides a furnace having a chamber with a heating element configured to radiatively heat a diamond. The diamond is positioned within the chamber, and levels of gas within the chamber are modulated to achieve a prescribed pressure. The diamond is heated to a prescribed temperature using a given heating ramp rate. The given heating ramp rate is greater than about 60° C. per minute and less than about 800° C. per minute. The prescribed temperature is greater than about 1,350° C. and less than about 2,200° C. The prescribed pressure is greater than 1×10{circumflex over (?)}?9 Torr and less than about 550 Torr.

Abstract: A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

Abstract: A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.

Abstract: A system grows diamonds. The system includes a chemical vapor deposition reactor having a microwave chamber. The system further includes a single-crystal seed configured to be positioned in the chamber. The system also includes a precursor gas. A microwave source is configured to energize the precursor gas to produce a plasma plume. An electromagnetic source of the system is configured to generate a steering field to adjust a position of the plasma plume in the chamber and/or to adjust a shape of the plasma plume.

Abstract: A method forms one or more diamonds. The method provides a growth chamber having a gas environment. A single crystal diamond substrate is positioned within the growth chamber. Diamond material is deposited on the single crystal diamond substrate for epitaxial growth. The single crystal diamond substrate has a given crystal orientation. Growth is continued at a prescribed temperature, prescribed pressure, and with a prescribed gas content for the gas environment. The prescribed gas environment has a nitrogen concentration of greater than about 0.5 ppm and less than about 5.0 ppm. The prescribed temperature is greater than about 650 degrees C. and less than about 950 degrees C. The prescribed pressure is greater than about 130 Torr and less than about 175 Torr.

Abstract: A diamond includes a first dopant configured to cause the diamond to have a first color. The diamond also includes a second dopant configured to cause the diamond to have a second color. Furthermore, the diamond includes a third dopant configured to cause the diamond to have a third color. The combined color of the first, second, and third dopants in the diamond mitigate the detrimental effect of the first and second dopant on the color of the diamond.

Abstract: A method of forming a plurality of diamonds provides a base, epitaxially forms a first sacrificial layer on the base, and then epitaxially forms a first diamond layer on the first sacrificial layer. The first sacrificial layer has a first material composition, and the first diamond layer is a material that is different from the first material composition. The method then epitaxially forms a second sacrificial layer on the first diamond layer, and epitaxially forms a second diamond layer on the second sacrificial layer. The second sacrificial layer has the first material composition. The base, first and second sacrificial layers, and first and second diamond layers form a heteroepitaxial super-lattice.