Abstract: A network device including at least one network port, a clock, address resolution (ARL) tables, and address resolution logic. The at least one network port is configured to send and receive a data packet. The clock is for generating a timing signal. The ARL tables are configured to store and maintain data related to port addresses of the network device. The address resolution logic is coupled to the ARL tables and configured to perform a search and an update to data into the ARL tables based on the data packet, to calculate a current range of the search, to determine an intended result of the update, and to block the update when the intended result will move data out of the current range of the search, the search and the update being performed concurrently during alternating slots of the timing signal.

Abstract: A network device includes an input, at least one port, a frequency doubler, a data I/O device, and a variable delay circuit. The input is for receiving an external clock signal. The frequency doubler is coupled to the input and configured to receive an input signal and output an output signal with a frequency double that of the input signal. The data I/O device is configured to output data to the at least one port based on a reference clock signal. The variable delay circuit is located between the data I/O device and at least one port. An external clock signal received at the input is input into the frequency doubler. The output signal of the frequency doubler is applied to the data I/O device as the reference clock signal, and the output data is delayed by the variable delay circuit.

Abstract: A network device is provided which includes a device input, at least one port, a frequency doubler, a data I/O device, and a programmable delay locked loop. The frequency doubler is coupled to the input and configured to receive an input signal and output an output signal having double the frequency of the input signal. The data I/O device is configured to output data based upon a reference clock signal. The programmable delay locked loop is coupled to the device input and configured to receive an input signal and to automatically output an output signal being a predetermined amount out of phase from the input signal. An external clock signal received at the device input is input to the frequency doubler. The output of the frequency doubler is input to the data I/O device as a reference clock. Data (e.g., from internal device logic) is output from the data I/O device to the at least one port.

Abstract: A network device including a memory, a queue management unit, a memory management unit, and a search switching unit. The memory includes a plurality of memory banks. The queue management unit is configured to receive a plurality of search requests and to prioritize the search requests. The memory management unit is coupled to the queue management unit and the memory, and is configured to initiate a plurality of binary searches based on the plurality of search requests. Each binary search is executed simultaneously in different banks of the plurality of memory banks. The search switching unit is coupled to the memory and the memory management unit, and is configured to switch each binary search from one memory bank of to another memory bank after a predetermined number of search steps are performed by each binary search.

Abstract: A network device including a memory, a queue management unit, a memory management unit, and a search switching unit. The memory includes a plurality of memory banks. The queue management unit is configured to receive a plurality of search requests and to prioritize the search requests. The memory management unit is coupled to the queue management unit and the memory, and is configured to initiate a plurality of binary searches based on the plurality of search requests. Each binary search is executed simultaneously in different banks of the plurality of memory banks. The search switching unit is coupled to the memory and the memory management unit, and is configured to switch each binary search from one memory bank of to another memory bank after a predetermined number of search steps are performed by each binary search.

Abstract: A planning system of cargo supply and transportation having a server and a client connected to the server optionally is disclosed such that the customer is able to transmit the desired service to the server via the client for the server to match the service the customer needs and the sever provides. Therefore, the service the server provides the service that best meets the customer's need.

Abstract: A network device includes at least one network port, a masks table, a rules table, a pointers table, and a fast filter processor. The masks table contains filter information and a mask key. The rules table contains corresponding rules to the filter information and is related to the mask table by the mask key. The pointers table contains boundary data related to the rules for corresponding filter information. The fast filter processor is coupled to the mask table, the rules table and the pointers table, and configured to perform at least one binary search for at least one rule related to a data packet received by the network device at the at least one network port, the binary search being limited based on the boundary data in the pointers table.

Abstract: A network device includes an input, at least one port, a frequency doubler, a data I/O device, and a variable delay circuit. The input is for receiving an external clock signal. The frequency doubler is coupled to the input and configured to receive an input signal and output an output signal with a frequency double that of the input signal. The data I/O device is configured to output data to the at least one port based on a reference clock signal. The variable delay circuit is located between the data I/O device and at least one port. An external clock signal received at the input is input into the frequency doubler. The output signal of the frequency doubler is applied to the data I/O device as the reference clock signal, and the output data is delayed by the variable delay circuit.

Abstract: A network device including at least one network port, a clock, address resolution logic (ARL) tables, and address resolution logic. The clock generates a timing signal. The ARL tables are configured to store and maintain data related to port addresses of the network device. The address resolution logic is coupled to the ARL tables and the clock, and configured to search the ARL tables and to perform learning concurrently during alternating slots of the timing signal. Upon receiving a data packet at the at least one port, the address resolution logic is configured to search the ARL tables for a destination address based on the data packet. When the destination address is found, the address resolution logic is configured to update a related record of the ARL tables based on the learning, the address resolution logic configured to perform searches and updates.

Abstract: A network device is provided which includes a device input, at least one port, a frequency doubler, a data I/O device, and a programmable delay locked loop. The frequency doubler is coupled to the input and configured to receive an input signal and output an output signal having double the frequency of the input signal. The data I/O device is configured to output data based upon a reference clock signal. The programmable delay locked loop is coupled to the device input and configured to receive an input signal and to automatically output an output signal being a predetermined amount out of phase from the input signal. An external clock signal received at the device input is input to the frequency doubler. The output of the frequency doubler is input to the data I/O device as a reference clock. Data (e.g., from internal device logic) is output from the data I/O device to the at least one port.

Abstract: A network device including at least one network port, a clock, address resolution (ARL) tables, and address resolution logic. The at least one network port is configured to send and receive a data packet. The clock is for generating a timing signal. The ARL tables are configured to store and maintain data related to port addresses of the network device. The address resolution logic is coupled to the ARL tables and configured to perform a search and an update to data into the ARL tables based on the data packet, to calculate a current range of the search, to determine an intended result of the update, and to block the update when the intended result will move data out of the current range of the search, the search and the update being performed concurrently during alternating slots of the timing signal.

Abstract: A network device including a memory, a queue management unit, a memory management unit, and a search switching unit. The memory includes a plurality of memory banks. The queue management unit is configured to receive a plurality of search requests and to prioritize the search requests. The memory management unit is coupled to the queue management unit and the memory, and is configured to initiate a plurality of binary searches based on the plurality of search requests. Each binary search is executed simultaneously in different banks of the plurality of memory banks. The search switching unit is coupled to the memory and the memory management unit, and is configured to switch each binary search from one memory bank of to another memory bank after a predetermined number of search steps are performed by each binary search.

Abstract: A nitride layer is deposited over a field oxide layer used to separate transistors formed in a substrate, the nitride layer serving to decrease transistor current leakage. The nitride layer has a dense lattice, effectively blocking H+ and Na+ penetration from overlying layers into the field oxide. Positive ions such as H+ and Na+ penetrating into the field oxide layer cause a p-substrate under the field oxide layer to become inverted or act like an n-type substrate, creating leakage current between source and drain regions of transistors which the field oxide layer separates. When high transistor threshold voltages such as 12 volts or more are desired, the nitride layer provides a significant reduction in current leakage.

Abstract: A nitride layer is deposited over a field oxide layer used to separate transistors formed in a substrate, the nitride layer serving to decrease transistor current leakage. The nitride layer has a dense lattice, effectively blocking H+ and Na+ penetration from overlying layers into the field oxide. Positive ions such as H+ and Na+ penetrating into the field oxide layer cause a p-substrate under the field oxide layer to become inverted or act like an n-type substrate, creating leakage current between source and drain regions of transistors which the field oxide layer separates. When high transistor threshold voltages such as 12 volts or more are desired, the nitride layer provides a significant reduction in current leakage.

Abstract: Controlling the thickness of borophosphorous tetraethyl orthosilicate (BPTEOS) used as all or part of the first inter-layer dielectric (ILD0) in manufacturing a semiconductor device containing an array of transistors to control the field leakage between transistors. Reducing field leakage enables the thickness of field oxide, typically used to reduce field leakage, to be reduced to increase device density in the transistor array.

Abstract: Depletion mode pass gates utilized in a PLD to enable a gate voltage of Vcc to be applied for turn off, as opposed to a higher voltage required for enhancement type devices. With Vcc applied for turn off, gate oxide stress is reduced and chip reliability increased. A decoder utilizing PMOS transistors is further used to supply a negative gate voltage to enable turn off of the depletion mode pass gates. In one embodiment, to prevent pumping the power supply voltage above Vcc when supplying Vcc to gates of the pass gates, the decoder is an all PMOS device using PMOS transistors to connect Vcc to gates of the pass gates. In another embodiment both NMOS and PMOS transistors are utilized, with PMOS blocking transistors utilized to prevent a negative voltage from being applied to the NMOS transistors and causing current leakage. A negative voltage pump is further provided to supply a sufficient negative voltage.

Abstract: The concentration of impurities at the surface of the semiconductor device adjacent and under the bird's beak of a field oxide region is reduced by employing sidewall spacers prior to field implantation. The resulting semiconductor device exhibits reduced sidewall junction capacitance and leakage, an increased junction breakdown voltage and a reduced narrow channel effect.

Abstract: A low power CMOS array cell for use in a PLD device is disclosed. The cell utilizes controlled avalanche injection at the p-n junction of a transistor in the CMOS cell for programming and erasing, resulting in lower voltages than with Fowler-Nordheim tunneling and lower currents than channel hot carrier injection during program and erase. A depletion transistor having a gate connected to its source has a source-drain path supplying current to the CMOS cell to limit current required during avalanche injection.

Abstract: An improved EEPROM structure is provided which has a longer data retention period. This is achieved by utilizing only positive charges to store data on the floating gate. The EEPROM structure includes a write select transistor (112), a read select transistor (120), and a floating gate sense transistor (126). The source of the write select transistor is capacitively coupled to the floating gate of the floating gate sense transistor via a tunnel oxide layer (145). The floating gate of the floating gate sense transistor is also capacitively coupled to a control gate line (CG) via a gate oxide layer (153). The sense transistor is formed as an enhancement transistor so as to allow the EEPROM structure to be operated in a region where the floating gate potential is positive for both programmed and erased conditions, thereby using only the positive charges to store data.

Abstract: An improved method for screening a non-volatile memory device or programmable logic device including the steps of initially programming and then erasing a device for a predetermined number of cycles thereby providing a stressed device. Next, the stressed device is erased, providing an erased device. A first voltage value is measured across the floating gate of each cell of the erased device which is then stored for a predetermined period of time at a first predetermined temperature, providing a stored device. Next, the stored device is baked at a second predetermined temperature resulting in a baked device. Then, a second voltage value is measured across the floating gate of each cell of the baked device. Each of the first and the second voltage values are subtracted to provide a plurality of measured voltage drop values each of which are compared to an acceptable predetermined voltage drop value.