Patents by Inventor Jonathan LINKE

Jonathan LINKE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Interdigitated back contact solar cell and method for producing an interdigitated back contact solar cell
    Patent number: 12635259
    Abstract: Provided are an interdigitated back contact solar cell (10, a, b, c), comprising a monocrystalline, n-doped wafer (101), a first contact area (40) which is formed by a first stack on the surface of said monocrystalline wafer (101), said first stack comprising a thin silicon oxide layer (201) and a highly n-doped polycrystalline silicon layer (301), and a second contact area (20) which is formed by a second stack on the same surface of said monocrystalline wafer (101) as said first stack, said second stack comprising a thin silicon oxide layer (202) and a highly p-doped polycrystalline silicon layer (701), wherein a p-doped monocrystalline silicon region (801) is located in a gap (30) between said first contact area (40) and said second contact area (20) and a method for producing such an interdigitated back contact solar cell (10, a, b, c).
    Type: Grant
    Filed: December 6, 2022
    Date of Patent: May 19, 2026
    Assignee: INTERNATIONAL SOLAR ENERGY RESEARCH CENTER KONSTANZ E.V.
    Inventors: Florian Buchholz, Jan Hoss, Jonathan Linke
  • Interdigitated back contact solar cell and method for producing an interdigitated back contact solar cell
    Publication number: 20250048746
    Abstract: Provided are an interdigitated back contact solar cell (10,a,b,c), comprising a monocrystalline, n-doped wafer (101), a first contact area (40) which is formed by a first stack on the surface of said monocrystalline wafer (101), said first stack comprising a thin silicon oxide layer (201) and a highly n-doped polycrystalline silicon layer (301), and a second contact area (20) which is formed by a second stack on the same surface of said monocrystalline wafer (101) as said first stack, said second stack comprising a thin silicon oxide layer (202) and a highly p-doped polycrystalline silicon layer (701), wherein a p-doped monocrystalline silicon region (801) is located in a gap (30) between said first contact area (40) and said second contact area (20) and a method for producing such an interdigitated back contact solar cell (10,a,b,c).
    Type: Application
    Filed: December 6, 2022
    Publication date: February 6, 2025
    Inventors: Florian BUCHHOLZ, Jan HOSS, Jonathan LINKE