Abstract: The detachment of a semiconductor chip (1) from a foil (4) and picking the semiconductor chip (1) from the foil (4) takes place with the support of a chip ejector (6), that has a ramp (16), the surface (17) of which is formed concave and ends at a stripping edge (18) projecting from the surface (9) of the chip ejector (6), and a support area (13) with grooves (12) arranged next to the stripping edge (18). Vacuum can be applied to the grooves (12). The detachment and picking of the semiconductor chip (1) from the foil (4) takes place in that the wafer table (5) is shifted relative to the chip ejector (6) in order to pull the foil (4) over the stripping edge (18) protruding from the surface (9) of the chip ejector (6), whereby the semiconductor chip (1) temporarily detaches itself at least partially from the foil (4) and lands on the foil (4) above the support area (13), and in that the chip gripper (7) picks the semiconductor chip (1) presented on the support area (13).

Abstract: The detachment of a semiconductor chip (1) from a foil (4) and picking the semiconductor chip (1) from the foil (4) takes place with the support of a chip ejector (6), that has a ramp (16), the surface (17) of which is formed concave and ends at a stripping edge (18) projecting from the surface (9) of the chip ejector (6), and a support area (13) with grooves (12) arranged next to the stripping edge (18). Vacuum can be applied to the grooves (12). The detachment and picking of the semiconductor chip (1) from the foil (4) takes place in that the wafer table (5) is shifted relative to the chip ejector (6) in order to pull the foil (4) over the stripping edge (18) protruding from the surface (9) of the chip ejector (6), whereby the semiconductor chip (1) temporarily detaches itself at least partially from the foil (4) and lands on the foil (4) above the support area (13), and in that the chip gripper (7) picks the semiconductor chip (1) presented on the support area (13).

Abstract: The detachment of a semiconductor chip (1) from a foil (4) and picking the semiconductor chip (1) from the foil (4) takes place with the support of a chip ejector (6), that has a ramp (16), the surface (17) of which is formed concave and ends at a stripping edge (18) projecting from the surface (9) of the chip ejector (6), and a support area (13) with grooves (12) arranged next to the stripping edge (18). Vacuum can be applied to the grooves (12). The detachment and picking of the semiconductor chip (1) from the foil (4) takes place in that the wafer table (5) is shifted relative to the chip ejector (6) in order to pull the foil (4) over the stripping edge (18) protruding from the surface (9) of the chip ejector (6), whereby the semiconductor chip (1) temporarily detaches itself at least partially from the foil (4) and lands on the foil (4) above the support area (13), and in that the chip gripper (7) picks the semiconductor chip (1) presented on the support area (13).

Abstract: A method for checking the quality of a wedge bond between a wire loop and a connection point on a substrate, whereby the wire loop was formed by means of a capillary of a Wire Bonder, is characterised by the following steps: Placing the capillary at a side of the wire loop and next to the wedge bond, whereby the tip of the capillary is located below the level of the wire loop. Moving the capillary parallel to the surface of the substrate and orthogonally to the wire loop until the wedge bond tears away from the connection point or the wire breaks, and simultaneously measuring a signal that is a measure for a force exerted by the capillary on the wire loop, and Determining the maximum of the measured signal.

Abstract: A predetermined number of bond cycles is carried out in order to find optimum bond parameters for a wire bonder. The bond parameters to be optimized are each varied within a predefined range. With each bond cycle, after attachment of the wire to the connection point, the capillary is moved out of the bond position in a predetermined horizontal direction whereby the current flowing through the drive which moves the capillary is monitored and its maximum determined.

Abstract: The detachment of a semiconductor chip (1) from a foil (4) and picking the semiconductor chip (1) from the foil (4) takes place with the support of a chip ejector (6), that has a ramp (16), the surface (17) of which is formed concave and ends at a stripping edge (18) projecting from the surface (9) of the chip ejector (6), and a support area (13) with grooves (12) arranged next to the stripping edge (18). Vacuum can be applied to the grooves (12). The detachment and picking of the semiconductor chip (1) from the foil (4) takes place in that the wafer table (5) is shifted relative to the chip ejector (6) in order to pull the foil (4) over the stripping edge (18) protruding from the surface (9) of the chip ejector (6), whereby the semiconductor chip (1) temporarily detaches itself at least partially from the foil (4) and lands on the foil (4) above the support area (13), and in that the chip gripper (7) picks the semiconductor chip (1) presented on the support area (13).

Abstract: A method for checking the quality of a wedge bond between a wire loop and a connection point on a substrate, whereby the wire loop was formed by means of a capillary of a Wire Bonder, is characterised by the following steps: Placing the capillary at a side of the wire loop and next to the wedge bond, whereby the tip of the capillary is located below the level of the wire loop. Moving the capillary parallel to the surface of the substrate and orthogonally to the wire loop until the wedge bond tears away from the connection point or the wire breaks, and simultaneously measuring a signal that is a measure for a force exerted by the capillary on the wire loop, and Determining the maximum of the measured signal.

Abstract: A method for checking the quality of a wedge bond between a wire loop and a connection point on a substrate, whereby the wire loop was formed by means of a capillary of a Wire Bonder, is characterised by the following steps:

Abstract: Optimum bond parameters for a bond force FB and an ultrasonic variable PB and, optionally, at least one further bond parameter GB of a Wire Bonder for ball bonding can be determined by means of a method with which a predetermined number of bond cycles is carried out, whereby the bond parameters to be optimised are each varied within a predefined range, whereby with each bond cycle n, after attachment of the wire ball to the connection point of the semiconductor chip, the following steps are carried out: