Abstract: Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.

Abstract: Antiferromagnetic magneto-electric spin-orbit read (AFSOR) logic devices are presented. The devices include a voltage-controlled magnetoelectric (ME) layer that switches polarization in response to an electric field from the applied voltage and a narrow channel conductor of a spin-orbit coupling (SOC) material on the ME layer. One or more sources and one or more drains, each optionally formed of ferromagnetic material, are provided on the SOC material.

Abstract: A configurable ME MTJ XOR/XNOR gate includes an insulator separating a top and bottom FM layer, a top ME layer with a first boundary magnetism at an interface of the top ME layer and the top FM layer, a bottom ME layer with a second boundary magnetism at an interface of the bottom ME layer and the bottom FM layer, and a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer. A voltage between the top electrode and FM layer is a first input, a voltage between the bottom electrode and FM layer is a second input, and a resistance between the top and bottom FM layer is indicative of the XOR or the XNOR of the inputs. The configurable ME MTJ XOR/XNOR gate has reduced energy consumption, smaller area, faster switching times, is non-volatile, and is configurable.

Abstract: A configurable ME MTJ XOR/XNOR gate includes an insulator separating a top and bottom FM layer, a top ME layer with a first boundary magnetism at an interface of the top ME layer and the top FM layer, a bottom ME layer with a second boundary magnetism at an interface of the bottom ME layer and the bottom FM layer, and a top electrode coupled to the top ME layer and a bottom electrode coupled to the bottom ME layer. A voltage between the top electrode and FM layer is a first input, a voltage between the bottom electrode and FM layer is a second input, and a resistance between the top and bottom FM layer is indicative of the XOR or the XNOR of the inputs. The configurable ME MTJ XOR/XNOR gate has reduced energy consumption, smaller area, faster switching times, is non-volatile, and is configurable.

Abstract: A non-volatile memory circuit includes an SRAM cell with magnetoelectric or ferroelectric structures for maintaining data within the SRAM cell even with power off. In some implementations, the magnetoelectric and ferroelectric structures can be programmed using a NOR or tristate gate coupled to an internal state of the SRAM cell. In other implementations, the magnetoelectric and ferroelectric structures can be configured as programmable resistors in the cross-coupled signal path of the SRAM inverters.

Abstract: Majority and minority logic can be implemented by voltage controlled switching of magneto-electric layers of magneto electric magnetic tunnel junction (ME-MTJ) devices. A ME-MTJ device includes an exchange bias-controlled switching element and a pinned ferromagnetic layer on an antiferromagnetic layer. In one case, the switching element includes a magneto electric (ME) layer on a free ferromagnetic (FM) layer, and is separated from the pinned FM layer by an insulator. To implement a majority or minority logic gate a single ME-MTJ device may be used where the device is provided with three electrodes contacting the ME layer in an overlaying relationship with the ME layer. The orientation of the pinned FM layer indicates whether the gate is a majority or a minority logic gate.