Patents by Inventor Jonathan Pabustan
Jonathan Pabustan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9423969Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.Type: GrantFiled: August 17, 2015Date of Patent: August 23, 2016Assignee: Micron Technology, Inc.Inventors: Jonathan Pabustan, Vishal Sarin, Dzung H. Nguyen
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Publication number: 20150355849Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.Type: ApplicationFiled: August 17, 2015Publication date: December 10, 2015Applicant: MICRON TECHNOLOGY, INC.Inventors: Jonathan Pabustan, Vishal Sarin, Dzung H. Nguyen
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Patent number: 9123423Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.Type: GrantFiled: December 12, 2013Date of Patent: September 1, 2015Assignee: Micron Technology, Inc.Inventors: Jonathan Pabustan, Vishal Sarin, Dzung H. Nguyen
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Patent number: 8773912Abstract: Methods of programming memory cells are disclosed. In at least one embodiment, programming is accomplished by applying a first set of programming pulses to program to an initial threshold voltage, and applying a second set of programming pulses to program to a final threshold voltage.Type: GrantFiled: July 12, 2012Date of Patent: July 8, 2014Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Frankie F. Roohparvar, Jung-Sheng Hoei, Jonathan Pabustan
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Patent number: 8737127Abstract: A memory controller has a digital signal processor. The digital signal processor is configured to output a digital data signal of M+N bits of program data intended for programming a memory cell of a memory device. The digital signal processor is configured to receive a digital data signal of M+L bits read from the memory cell of the memory device and to retrieve from the received digital data signal M bits of data that were stored in the memory cell.Type: GrantFiled: February 19, 2013Date of Patent: May 27, 2014Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Jung-Sheng Hoei, Jonathan Pabustan, Frankie F. Roohparvar
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Patent number: 8713246Abstract: In one or more embodiments, a memory device has an adjustable programming window with a plurality of programmable levels. The programming window is moved to compensate for changes in reliable program and erase thresholds achievable as the memory device experiences factors such as erase/program cycles that change the program window. The initial programming window is determined prior to an initial erase/program cycle. The programming levels are then moved as the programming window changes, such that the plurality of programmable levels still remain within the program window and are tracked with the program window changes.Type: GrantFiled: September 7, 2012Date of Patent: April 29, 2014Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Frankie F. Roohparvar, Jonathan Pabustan, Jung-Sheng Hoei
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Publication number: 20140104956Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.Type: ApplicationFiled: December 12, 2013Publication date: April 17, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Jonathan Pabustan, Vishal Sarin, Dzung H. Nguyen
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Patent number: 8611156Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.Type: GrantFiled: July 17, 2012Date of Patent: December 17, 2013Assignee: Micron Technology, Inc.Inventors: Jonathan Pabustan, Vishal Sarin, Dzung H. Nguyen
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Patent number: 8385121Abstract: A memory has a memory array with a memory cell. The memory is adapted to program a first number of bits into the memory cell. The memory is adapted to sense a second number of bits, different from the first number of bits, from the memory cell.Type: GrantFiled: November 18, 2010Date of Patent: February 26, 2013Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Jung-Sheng Hoei, Jonathan Pabustan, Frankie F. Roohparvar
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Publication number: 20120331217Abstract: In one or more embodiments, a memory device has an adjustable programming window with a plurality of programmable levels. The programming window is moved to compensate for changes in reliable program and erase thresholds achievable as the memory device experiences factors such as erase/program cycles that change the program window. The initial programming window is determined prior to an initial erase/program cycle. The programming levels are then moved as the programming window changes, such that the plurality of programmable levels still remain within the program window and are tracked with the program window changes.Type: ApplicationFiled: September 7, 2012Publication date: December 27, 2012Inventors: Vishal Sarin, Frankie F. Roohparvar, Jonathan Pabustan, Jung-Sheng Hoei
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Publication number: 20120281480Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.Type: ApplicationFiled: July 17, 2012Publication date: November 8, 2012Inventors: Jonathan Pabustan, Vishal Sarin, Dzung H. Nguyen
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Patent number: 8307152Abstract: In one or more embodiments, a memory device is disclosed as having an adjustable programming window having a plurality of programmable levels. The programming window is moved to compensate for changes in reliable program and erase thresholds achievable as the memory device experiences factors such as erase/program cycles that change the program window. The initial programming window is determined prior to an initial erase/program cycle. The programming levels are then moved as the programming window changes, such that the plurality of programmable levels still remain within the program window and are tracked with the program window changes.Type: GrantFiled: January 17, 2012Date of Patent: November 6, 2012Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Frankie F. Roohparvar, Jonathan Pabustan, Jung-Sheng Hoei
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Publication number: 20120275233Abstract: Methods of programming memory cells are disclosed. In at least one embodiment, programming is accomplished by applying a first set of programming pulses to program to an initial threshold voltage, and applying a second set of programming pulses to program to a final threshold voltage.Type: ApplicationFiled: July 12, 2012Publication date: November 1, 2012Inventors: Vishal Sarin, Frankie F. Roohparvar, Jung-Sheng Hoei, Jonathan Pabustan
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Patent number: 8274835Abstract: Methods for mitigating runaway programming in a memory device, methods for program verifying a memory device, a memory device, and a memory system are provided. In one such method, a ramp voltage signal is generated by a digital count signal. A memory cell being program verified is turned on by a particular verify voltage of the ramp voltage signal in response to a digital count of the digital count signal. The memory cell turning on generates a bit line indication that causes the digital count to be compared to a representation of the target data to be programmed in the memory cell. The comparator circuit generates an indication when the digital count is greater than or equal to the target data.Type: GrantFiled: December 30, 2010Date of Patent: September 25, 2012Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Jonathan Pabustan, Frankie F. Roohparvar
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Patent number: 8254180Abstract: Methods of operating memories facilitate compensating for memory cell signal line propagation delays, such as to increase the overall threshold voltage range and non-volatile memory cell states available. Methods include selecting a memory cell signal line of a memory and characterizing the memory cell signal line by determining an RC time constant of the memory cell signal line.Type: GrantFiled: September 19, 2011Date of Patent: August 28, 2012Assignee: Micron Technology, Inc.Inventors: Jung-Sheng Hoei, Jonathan Pabustan, Vishal Sarin, William H. Radke, Frankie F. Roohparvar
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Patent number: 8243523Abstract: Methods for sensing, method for programming, memory devices, and memory systems are disclosed. In one such method for sensing, a counting circuit generates a count output and a translated count output. The count output is converted into a time varying voltage that biases a word line coupled to memory cells being sensed. Target data for each memory cell is stored in a data cache associated with that particular memory cell. When it is detected that a memory cell has turned on, the translated count output associated with the count output that is indicative of the voltage level that turned on the memory cell is compared to the target data. The comparison determines the state of the memory cell.Type: GrantFiled: March 9, 2010Date of Patent: August 14, 2012Assignee: Micron Technology, Inc.Inventors: Jonathan Pabustan, Vishal Sarin, Dzung H. Nguyen
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Patent number: 8223551Abstract: Methods of programming memory cells are disclosed. In at least one embodiment, programming is accomplished by applying a first set of programming pulses to program to an initial threshold voltage, and applying a second set of programming pulses to program to a final threshold voltage.Type: GrantFiled: February 19, 2009Date of Patent: July 17, 2012Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Frankie F. Roohparvar, Jung-Sheng Hoei, Jonathan Pabustan
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Publication number: 20120117313Abstract: In one or more embodiments, a memory device is disclosed as having an adjustable programming window having a plurality of programmable levels. The programming window is moved to compensate for changes in reliable program and erase thresholds achievable as the memory device experiences factors such as erase/program cycles that change the program window. The initial programming window is determined prior to an initial erase/program cycle. The programming levels are then moved as the programming window changes, such that the plurality of programmable levels still remain within the program window and are tracked with the program window changes.Type: ApplicationFiled: January 17, 2012Publication date: May 10, 2012Inventors: Vishal SARIN, Frankie F. Roohparvar, Jonathan Pabustan, Jung-Sheng Hoei
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Patent number: 8169832Abstract: Methods and apparatus are disclosed, such as those involving a flash memory device that includes a memory block. The memory block includes a plurality of data lines extending substantially parallel to one another, and a plurality of memory cells. One such method includes erasing the memory cells; and performing erase verification on the memory cells. The erase verification includes determining one memory cell by one memory cell whether the individual memory cells coupled to one of the data lines have been erased. The method can also include performing a re-erase operation that selectively re-erases unerased memory cells based at least partly on the result of the erase verification.Type: GrantFiled: October 21, 2010Date of Patent: May 1, 2012Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Dzung Nguyen, Jonathan Pabustan, Jung Sheng Hoei, Jason Guo, William Saiki
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Patent number: 8117375Abstract: In one or more embodiments, a memory device is disclosed as having an adjustable programming window having a plurality of programmable levels. The programming window is moved to compensate for changes in reliable program and erase thresholds achievable as the memory device experiences factors such as erase/program cycles that change the program window. The initial programming window is determined prior to an initial erase/program cycle. The programming levels are then moved as the programming window changes, such that the plurality of programmable levels still remain within the program window and are tracked with the program window changes.Type: GrantFiled: October 17, 2007Date of Patent: February 14, 2012Assignee: Micron Technology, Inc.Inventors: Vishal Sarin, Frankie F. Roohparvar, Jonathan Pabustan, Jung-Sheng Hoei