Patents by Inventor Jonathan Philip Davis

Jonathan Philip Davis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DRAM having improved leakage performance and method for making same
    Publication number: 20040031992
    Abstract: A semiconductor memory device comprises a trench etched from a substrate below a shallow trench isolation and a doped collar oxide. The device further comprises a buried-strap junction formed adjacent to the shallow trench isolation and above the collar oxide, and a channel stop formed below the buried-strap junction, wherein a junction between the channel stop and the buried-strap junction is formed in the substrate.
    Type: Application
    Filed: August 19, 2002
    Publication date: February 19, 2004
    Applicant: Infineon Technologies Richmond, LP
    Inventors: Jonathan Philip Davis, Stephen M. Rusinko
  • Silicon corner rounding by ion implantation for shallow trench isolation
    Patent number: 6174787
    Abstract: A method for rounding corners of a silicon substrate, in accordance with the present invention, includes forming a plateau on a silicon substrate having corners at edges of the plateau. A mask is formed on a top surface of the plateau, which is recessed back from vertical edges of the plateau to provide exposed horizontal portions. Fluorine or Argon dopants are implanted at the corners and on the exposed portions, and the substrate is oxidized such that the corners become rounded providing a gradual transition at the edges of the plateau.
    Type: Grant
    Filed: December 30, 1999
    Date of Patent: January 16, 2001
    Assignees: White Oak Semiconductor Partnership, Infineon Technologies North America Corp.
    Inventors: Robert Fuller, Jonathan Philip Davis, Michael Rennie