Patents by Inventor Jonathan Picker

Jonathan Picker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170137968
    Abstract: The present invention relates generally to methods, algorithms, kits and systems for assessing health, diagnosing disease and generating recommendations using SNV markers specific to a cohort. A genetic sample of an individual is assayed using a genotyping assay to identify at least one SNV. The genotyping assay may be a computer analysis using a database, a nucleic acid microarray assay or a PCR assay. The identified SNV can be compared with a database of SNV markers to identify a plurality of risk SNVs, which are associated with a disease state or pathological condition, including pharmacological sensitivity or resistance. A genetic risk factor (GRF) may be calculated using a weighted score. The GRF is used to determine the risk level associated with the disease. A matrix may be generated using the genetic profile and recommendations specific to cohort and physiologic data. The user is allowed to input physiologic and genomic data, which is compared to the matrix to generate recommendations.
    Type: Application
    Filed: September 7, 2016
    Publication date: May 18, 2017
    Applicant: Global Gene Corporation Pte. Ltd.
    Inventors: Saumya Jamuar, Jonathan Picker, Shalendra Porwal, Kushagra Sharma, Sumit Jamuar
  • Publication number: 20070287271
    Abstract: Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.
    Type: Application
    Filed: August 13, 2007
    Publication date: December 13, 2007
    Inventors: Sheeba Panayil, Ming Li, Shulin Wang, Jonathan Pickering
  • Publication number: 20060019469
    Abstract: Numerous embodiments of a method for depositing a layer of nano-crystal silicon on a substrate. In one embodiment of the present invention, a substrate is placed in a single wafer chamber and heated to a temperature between about 300° C. to about 490° C. A silicon source is also fed into the single wafer chamber.
    Type: Application
    Filed: July 23, 2004
    Publication date: January 26, 2006
    Inventors: Sheeba Panayil, Ming Li, Shulin Wang, Jonathan Pickering