Abstract: An apparatus for defining an acoustic reference for an audio system on an open air vehicle. The apparatus has a center frame module, a first side frame module extending laterally from a first side of the center frame and adjustable between 0 and 180 degrees with respect to the center frame, a second side frame module extending laterally from a second side of the center frame and adjustable between 0 and 180 degrees, and at least one piece of test equipment mounted to at least one of the center, first side or second side frames thereby defining the acoustic reference.

Abstract: Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.

Abstract: Methods of forming planar zinc-oxide based epitaxial layers, associated heterostructures, and devices are provided.

Abstract: Disclosed herein are systems and methods for the distribution of media content to the public, utilizing an internet community network of subscribers having access to sample content; systems and methods for financing the implementation of digital projection capability in a plurality of theaters; systems and methods for dynamically targeting advertising to an audience based on the brand landscape at a given time in a given place; and systems and methods for progressively encumbering content through licensing as the popularity of content increases.

Abstract: A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

Abstract: A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device.

Abstract: A light-emitting device, such as a light-emitting diode (LED), includes a substrate including a ZnO-based material, and a structure disposed on a first side of the substrate. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device further includes at least one textured light emission surface arranged to extract at least some light generated within the device.

Abstract: A method of metalorganic chemical vapor deposition includes converting a condensed matter source to provide a first gas, the source including at least one element selected from the group consisting of gold, silver and potassium. The method further includes providing a second gas comprising zinc and a third gas comprising oxygen, transporting the first gas, the second gas, and the third gas to a substrate, and forming a p-type zinc-oxide based semiconductor layer on the substrate.

Abstract: A substrate is provided including a growth surface that is offcut relative to a plane defined by a crystallographic orientation of the substrate at an offcut angle of about 5 degrees to about 45 degrees. A thermoelectric film is epitaxially grown on the growth surface. A crystallographic orientation of the thermoelectric film may be tilted about 5 degrees to about 30 degrees relative to the growth surface. The growth surface of the substrate may also be patterned to define a plurality of mesas protruding therefrom prior to epitaxial growth of the thermoelectric film. Related methods and thermoelectric devices are also discussed.

Abstract: Forming a thermoelectric device may include forming a thermoelectric superlattice including a plurality of alternating layers of different thermoelectric materials wherein a period of the alternating layers varies over a thickness of the superlattice. More particularly, forming the superlattice may include depositing the superlattice on a single crystal substrate using epitaxial deposition. In addition, the single crystal substrate may be removed from the superlattice, and a second thermoelectric superlattice may be provided with the first and second thermoelectric superlattices having opposite conductivity types. Moreover, the first and second thermoelectric superlattices may be thermally coupled in parallel between two thermally conductive plates while electrically coupling the first and second thermoelectric superlattices in series. Related materials and devices and structures are also discussed.