Abstract: Various embodiments provide for context-aware circuit design layout construct, which may be part of electronic design automation (EDA). In particular, some embodiments enable use of a circuit design layout construct with a layout of a circuit design (hereafter, a circuit design layout), where a programmable pattern of layout shapes of the circuit design layout construct can be inserted into a circuit design layout and can be adapted based on context information associated with the location of its placement within the circuit design layout.

Abstract: Various embodiments described herein provide for a method and system for relative placement of components for a circuit layout by retrieving a data structure of a first circuit design, the data structure including a location of each component, determining a component characteristic for each component, and selecting a first group of two or more components having a shared component characteristic. Additionally, the method and system can instantiate a second circuit design and retrieve the data structure after the second circuit design is instantiated. The method and system include, for the second circuit design, calculating a first scaling factor and scaling each of the components of the first group from the first circuit design and placing the first group at a location in the second circuit design corresponding to location of the first group within the first circuit design.

Abstract: Systems, methods, media, and other such embodiments described herein relate to critical area analysis (CAA) operations as part of electronic design automation (EDA). One embodiment involves accessing a circuit design having a first layer (which may be a composite layer), sampling the first layer, and performing an initial CAA using the sampled portions of the layer with a set of predetermined defect sizes. The initial CAA is used to automatically generate a model which can be used to accurately select input parameters (e.g., selected defect sizes) for a full analysis. A CAA characteristic is then calculated for the first layer using the input parameters. In various embodiments, different sampling percentages and criteria for selecting input parameters can be used to reduce the computing resources to compute a CAA characteristic, such as theta-bar, while limiting error to a threshold amount (e.g. less than one percent).

Abstract: A method and system are provided for optimizing migrated implementation of a system design. In certain applications, a source hierarchical structure system and a target hierarchical structure system are provided, the hierarchy is abstracted out, intrinsic parameters are encoded and compared between source hierarchical structure and target hierarchical structure to arrive at an optimized change order list for transforming/migrating the source hierarchical structure system to the target hierarchical structure system.

Abstract: The embodiments of the invention provide an apparatus, method, etc. for an efficient circuit and method to measure resistance. A sense line driver for an integrated circuit memory is provided, including a sense node that receives an experiment signal from an experiment structure. An output device is connected to the sense node, wherein the output device amplifies the experiment signal. Further, a voltage divider is connected to the sense node, wherein the voltage divider includes a first device and a second device. A sensing range is controlled by an operating width/resistance range and/or an adjust signal of the second device. The adjust signal changes a gate to source voltage of the second device and holds a constant voltage over multiple sensing instances. The sensing range is different for each of the sensing instances due to a change in the operating width of the second device.

Abstract: A test structure (200, 200?) having an array (224) of test devices (220) for detecting and studying defects that can occur in an integrated circuit device, e.g., a transistor (144), due to the relative positioning of one component (100) of the device with respect to another component (108) of the device. The test devices in the array are of a like kind, but vary in their configuration. The differences in the configurations are predetermined and selected with the intent of forcing defects to occur within at least some of the test devices. During testing, the responses of the test devices are sensed so as to determine whether or not a defect has occurred in any one or more of the test devices. If a defective test device is detected, the corresponding wafer (204) may be subjected to physical failure analysis for yield learning.

Abstract: The embodiments of the invention provide an apparatus, method, etc. for an efficient circuit and method to measure resistance. A sense line driver for an integrated circuit memory is provided, including a sense node that receives an experiment signal from an experiment structure. An output device is connected to the sense node, wherein the output device amplifies the experiment signal. Further, a voltage divider is connected to the sense node, wherein the voltage divider includes a first device and a second device. A sensing range is controlled by an operating width/resistance range and/or an adjust signal of the second device. The adjust signal changes a gate to source voltage of the second device and holds a constant voltage over multiple sensing instances. The sensing range is different for each of the sensing instances due to a change in the operating width of the second device.

Abstract: Disclosed is a flexible command multiplication scheme for the built-in-self test (BIST) of a high-speed embedded memory array that segments BIST functionality into remote lower-speed executable instructions and local higher-speed executable instructions. A stand-alone BIST logic controller operates at a lower frequency and communicates with a command multiplier using a low-speed BIST instruction seed set. The command multiplier uses offset or directive registers to drive a logic unit or ALU to generate “n” sets of CAD information which are then time-multiplexed to the embedded memory at a speed “n” times faster than the BIST operating speed.