Patents by Inventor Jonathan R. SKUZA

Jonathan R. SKUZA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • X-ray diffraction (XRD) characterization methods for sigma=3 twin defects in cubic semiconductor (100) wafers
    Patent number: 9835570
    Abstract: An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
    Type: Grant
    Filed: September 12, 2014
    Date of Patent: December 5, 2017
    Assignee: The United States of America as represented by the Administrator of NASA
    Inventors: Yeonjoon Park, Hyun Jung Kim, Jonathan R. Skuza, Kunik Lee, Glen C. King, Sang Hyouk Choi
  • X-ray Diffraction (XRD) Characterization Methods for Sigma=3 Twin Defects in Cubic Semiconductor (100) Wafers
    Publication number: 20150078526
    Abstract: An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blende structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
    Type: Application
    Filed: September 12, 2014
    Publication date: March 19, 2015
    Inventors: Yeonjoon Park, Hyun Jung KIM, Jonathan R. SKUZA, Kunik LEE, Glen C. KING, Sang Hyouk CHOI