Abstract: A microchannel plate (1) for a microchannel plate electron multiplier, comprising: a substrate (5) forming a plate having first and second opposing faces and having a plurality of parallel channels therethrough from first to second faces and; a first electrode (3) on the first face, the first electrode (3) having a first side adjacent to the substrate and a second side opposite to the first side; a second electrode (4) on the second face, the second electrode (4) having a first side adjacent to the substrate (5) and a second side opposite to the first side; and a layer (6, 7) of resistive and secondary emissive material on the second side of the first electrode and the second electrode.

Abstract: A microchannel plate (1) for a microchannel plate electron multiplier, comprising: a substrate (5) forming a plate having first and second opposing faces and having a plurality of parallel channels therethrough from first to second faces and; a first electrode (3) on the first face, the first electrode (3) having a first side adjacent to the substrate and a second side opposite to the first side; a second electrode (4) on the second face, the second electrode (4) having a first side adjacent to the substrate (5) and a second side opposite to the first side; and a layer (6, 7) of resistive and secondary emissive material on the second side of the first electrode and the second electrode.

Abstract: The input surface of a photocathode consisting of a membrane of p-type silicon is modified to improve it's sensitivity. The p-type concentration is locally increased and the surface is coated with silicon nitride.

Abstract: An electron-emissive semiconductor device such as a photocathode or an electron multiplier, consists of separate regions of semiconductor material spaced apart by a barrier which reduces current flow between the regions. The barriers improve the performance of the device by preventing excess electron emission currents and reduce image spreading.