Patents by Inventor Jonathan S. Custer

Jonathan S. Custer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5997949
    Abstract: The present invention relates to the forming of amorphous or near-amorphous, ternary films of W-Si-N on substrates by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. The present invention method will allow the conformal forming of amorphous or near-amorphous, ternary films of W-Si-N on patterned non-planar substrates at temperatures at or below about 450.degree. C., by chemical vapor deposition of WF.sub.6, SiH.sub.4 and NH.sub.3 and a carrier gas. A typical temperature range for the formation of the films is between 473.degree. K. and 773.degree. K., while the reactor pressure can be varied between 0.1 to 50 Torr. The composition of the deposited films is adjusted by varying the flow ratios of the reactive gases.
    Type: Grant
    Filed: September 20, 1996
    Date of Patent: December 7, 1999
    Assignees: California Institute of Technology, Sandia Corporation
    Inventors: Marc-A. Nicolet, Roland Madar, Claude Bernard, James G. Fleming, Elizabeth Lynn Roherty-Osmun, Paul M. Smith, Jonathan S. Custer, Ronald V. Jones
  • Patent number: 5916634
    Abstract: A method of depositing a ternary, refractory based thin film on a substrate by chemical vapor deposition employing precursor sources of tungsten comprising WF.sub.6, either silicon or boron, and nitrogen. The result is a W--Si--N or W--B--N thin film useful for diffusion barrier and micromachining applications.
    Type: Grant
    Filed: October 1, 1996
    Date of Patent: June 29, 1999
    Assignee: Sandia Corporation
    Inventors: James G. Fleming, Elizabeth Lynn Roherty-Osmun, Paul M. Smith, Jonathan S. Custer, Ronald V. Jones, Marc-A. Nicolet, Roland Madar, Claude Bernard