Abstract: Embodiments of the present invention improve content manipulation systems and methods using speech recognition. In one embodiment, the present invention includes a method comprising configuring a recognizer to recognize utterances in the presence of a background audio signal having particular audio characteristics. A composite signal comprising a first audio signal and a spoken utterance of a user is received by the recognizer, where the first audio signal comprises the particular audio characteristics used to configure the recognizer so that the recognizer is desensitized to the first audio signal. The spoke utterance is recognized in the presence of the first audio signal when the spoken utterance is one of the predetermined utterances. An operation is performed on the first audio signal.

Abstract: Embodiments of the present invention improve content manipulation systems and methods using speech recognition. In one embodiment, the present invention includes a method comprising configuring a recognizer to recognize utterances in the presence of a background audio signal having particular audio characteristics. A composite signal comprising a first audio signal and a spoken utterance of a user is received by the recognizer, where the first audio signal comprises the particular audio characteristics used to configure the recognizer so that the recognizer is desensitized to the first audio signal. The spoke utterance is recognized in the presence of the first audio signal when the spoken utterance is one of the predetermined utterances. An operation is performed on the first audio signal.

Abstract: Embodiments of the present invention improve methods of performing speech recognition. In one embodiment, the present invention includes a method comprising receiving a spoken utterance, processing the spoken utterance in a speech recognizer to generate a recognition result, determining consistencies of one or more parameters of component sounds of the spoken utterance, wherein the parameters are selected from the group consisting of duration, energy, and pitch, and wherein each component sound of the spoken utterance has a corresponding value of said parameter, and validating the recognition result based on the consistency of at least one of said parameters.

Abstract: A movement control device is provided including audio means for emitting sound audible to a human. At least part of the audible sound includes a repetitive intermittent audible sound provided at such a frequency and/or rate sufficient to allow a person hearing the sound to fall into step with the sound to affect the speed at which the person moves from a first locality to at least a second locality.

Abstract: A plate heat exchanger includes a set of plates and gaskets. Each one of the set gaskets is disposed between two adjacent plates of the set of plates. A gasket of the set of gaskets includes a base material, a fluorocarbon coating disposed on the base material; and an interface layer disposed between the base material and the fluorocarbon coating. The interface layer includes a material gradient transitioning from the base material to the fluorocarbon coating. The fluorocarbon coating is chemically bound to the base material.

Abstract: In one embodiment the present invention includes a method comprising receiving an acoustic input signal and processing the acoustic input signal with a plurality of acoustic recognition processes configured to recognize the same target sound. Different acoustic recognition processes start processing different segments of the acoustic input signal at different time points in the acoustic input signal. In one embodiment, initial states in the recognition processes may be configured on each time step.

Abstract: A substantially dry and dust free method of recovering ladle slag is allowing hot ladle slag to cool to powder form in a controlled environment and collecting the powder in a receiver therefor. A vessel having a chamber containing in an upper portion a screen through which ladle slag can pass into a receiver below and means for cooling the slag in the vessel are provided.

Abstract: A method for reducing the parasitic capacitance in resistors, and a resistor design embodying this method are described. By creating a p-type or an n-type implant inside of an n-well or a p-substrate, respectively, where the n-well or p-substrate is located in a p-substrate or n-substrate, respectively, a capacitively coupled capacitor is formed in series connection with the parasitic inter-layer dielectric capacitance generated when the resistor is fabricated in the dielectric material. The depletion region formed thereby behaves as a series capacitor which reduces the overall capacitance of the assemblage. The n-well or p-substrate can be placed in electrical connection with a ground potential or brought to a chosen voltage to further increase the depletion region and reduce the capacitance of the resistor.

Abstract: A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes the absolute resistance of the p-type polysilicon resistor. This modulation occurs not only horizontally, but also vertically. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing.

Abstract: A method for reducing the parasitic capacitance in resistors, and a resistor design embodying this method are described. By creating a p-type or an n-type implant inside of an n-well or a p-substrate, respectively, where the n-well or p-substrate is located in a p-substrate or n-substrate, respectively, a capacitively coupled capacitor is formed in series connection with the parasitic inter-layer dielectric capacitance generated when the resistor is fabricated in the dielectric material. The depletion region formed thereby behaves as a series capacitor which reduces the overall capacitance of the assemblage. The n-well or p-substrate can be placed in electrical connection with a ground potential or brought to a chosen voltage to further increase the depletion region and reduce the capacitance of the resistor.

Abstract: A p-type polysilicon resistor formed in the inter-level dielectric layer contains an implanted diode. A positive voltage applied to the diode modulates the depletion region of the diode and changes the absolute resistance of the p-type polysilicon resistor. This modulation occurs not only horizontally, but also vertically. The fact that the tunable resistor is a p-type polysilicon resistor means that this structure can easily be integrated into the process since polysilicon is used as a gate material for basic CMOS processing.

Abstract: The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains first and second contact regions extending downward from the surface of the substrate. Third and fourth contacts are also located within the diffusion region between the first and second contacts and define a conduction channel therebetween. This contact also extends downward from the surface of the substrate. These contacts are connected to metal layers. The first and second contacts form the two ends of the diffusion resistor; the third and fourth contacts connect to N+p? diodes such that application of a voltage to these contacts forms respective depletion regions within the diffusion region. The depletion regions change in size depending on the voltage applied to their respective contact, thereby changing the resistance of the depletion resistor.

Abstract: A voltage-controlled, variable polysilicon resistor is formed of polysilicon deposited in the first interlayer dielectric layer at the same time that polysilicon routing is created. The polysilicon resistor, which is formed of n? doped polysilicon, has three contact regions connected to the metal layers. A region at either end of the resistor is doped n+ and forms the positive and negative terminals of the resistor. A third contact region is located within the polysilicon region between the first and second contacts to form a Schottky diode such that application of a voltage to this contact forms a depletion region within the polysilicon region. The depletion region changes in size depending on the voltage applied to the third contact to change the resistance of the depletion resistor.

Abstract: The present invention provides a diffusion resistor that is formed in the substrate. A diffusion region is formed within the substrate that contains a first and second contact region. These contact regions extend downward from the surface of the substrate. A third contact is located within the diffusion region between the first and second contacts. This contact also extends downward from the surface of the substrate. These contacts are connected to metal layers. The first and second contacts form the two ends of the diffusion resistor. The third contact forms a Schottky diode such that application of a voltage to this contact forms a depletion region within the diffusion region. The depletion region changes in size depending on the voltage applied to the third contact to change the resistance of the depletion resistor.

Abstract: An electron emitting device characterized by a monocrystalline substrate, a plurality of monocrystalline nanomesas or pillars disposed on the substrate in a spaced relationship and extending generally normally therefrom, monocrystalline self-assembled tips disposed on top of the nanomesas, and essentially atomically sharp apexes on the tips for field emitting electrons. A method for making the emitters is characterized by forming a gate electrode and gate electrode apertures before forming the tips on the nanomesas.

Abstract: An electron emitting device characterized by a monocrystalline substrate, a plurality of monocrystalline nanomesas or pillars disposed on the subste in a spaced relationship and extending generally normally therefrom, monocrystalline self-assembled tips disposed on top of the nanomesas, and essentially atomically sharp apexes on the tips for field emitting electrons. A method for making the emitters is characterized by forming a gate electrode and gate electrode apertures before forming the tips on the nanomesas.