Abstract: A MOSFET gate electrode is interrupted from extending across a common conduction region, thereby reducing gate capacitance. The reduced gate capacitance provides very low gate-to-drain charge, QGD, and very low gate-to-source charge, QGS. The gate electrode is supported by and is in effect or is actually interrupted by an oxide block over a common conduction area. The MOSFET can be formed by methods including: patterning oxide blocks on a substrate; providing gate electrode material in and over appropriate gaps between the oxide blocks; removing excess gate material; and forming oxide layers around the gate electrode material. Oxide blocks can alternately be patterned to permit gate electrodes to be formed directly between the oxide blocks. The reduced gate capacitance reduces switching delays while permitting minimum RDSON values.

Abstract: A MOSFET gate electrode is interrupted from extending across a common conduction region, thereby reducing gate capacitance. The reduced gate capacitance provides very low gate-to-drain charge, QGD, and very low gate-to-source charge, QGS. The gate electrode is supported by and is in effect or is actually interrupted by an oxide block over a common conduction area. The MOSFET can be formed by methods including: patterning oxide blocks on a substrate; providing gate electrode material in and over appropriate gaps between the oxide blocks; removing excess gate material; and forming oxide layers around the gate electrode material. Oxide blocks can alternately be patterned to permit gate electrodes to be formed directly between the oxide blocks. The reduced gate capacitance reduces switching delays while permitting minimum RDSON values.