Patents by Inventor Jonathan Strand
Jonathan Strand has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10991427Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: GrantFiled: May 24, 2019Date of Patent: April 27, 2021Assignee: Micron Technology, Inc.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, Durai Vishak Nirmal Ramaswamy
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Publication number: 20190279713Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: ApplicationFiled: May 24, 2019Publication date: September 12, 2019Applicant: Micron Technology, Inc.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, Durai Vishak Nirmal Ramaswamy
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Patent number: 10304531Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: GrantFiled: August 30, 2017Date of Patent: May 28, 2019Assignee: Micron Technology, Inc.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, Durai Vishak Nirmal Ramaswamy
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Publication number: 20170365339Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: ApplicationFiled: August 30, 2017Publication date: December 21, 2017Applicant: Micron Technology, Inc.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, Durai Vishak Nirmal Ramaswamy
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Patent number: 9773551Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: GrantFiled: January 4, 2016Date of Patent: September 26, 2017Assignee: Micron Technology, Inc.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, Durai Vishak Nirmal Ramaswamy
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Publication number: 20160118119Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: ApplicationFiled: January 4, 2016Publication date: April 28, 2016Applicant: Micron Technology, Inc.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, Durai Vishak Nirmal Ramaswamy
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Patent number: 9230685Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: GrantFiled: October 23, 2012Date of Patent: January 5, 2016Assignee: Micron Technology, Inc.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, D. V. Nirmal Ramaswamy
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Publication number: 20140112052Abstract: Memory programming methods and memory systems are described. One example memory programming method includes first applying a first signal to a memory cell to attempt to program the memory cell to a desired state, wherein the first signal corresponds to the desired state, after the first applying, determining that the memory cell failed to place in the desired state, after the determining, second applying a second signal to the memory cell, wherein the second signal corresponds to another state which is different than the desired state, and after the second applying, third applying a third signal to the memory cell to program the memory cell to the desired state, wherein the third signal corresponds to the desired state. Additional method and apparatus are described.Type: ApplicationFiled: October 23, 2012Publication date: April 24, 2014Applicant: MICRON TECHNOLOGY, INC.Inventors: Jonathan Strand, Adam Johnson, Xiaonan Chen, D.V. Nirmal Ramaswamy