Patents by Inventor Jonathan Sun

Jonathan Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150001655
    Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.
    Type: Application
    Filed: September 15, 2014
    Publication date: January 1, 2015
    Inventors: Jonathan Sun, Rolf Allenspach, Stuart Stephen Papworth Parkin, John Casimir Slonczewski, Bruce David Terris
  • Patent number: 7993535
    Abstract: A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure.
    Type: Grant
    Filed: January 26, 2007
    Date of Patent: August 9, 2011
    Assignee: International Business Machines Corporation
    Inventors: Xin Jiang, Stuart Stephen Papworth Parkin, Jonathan Sun
  • Publication number: 20100330707
    Abstract: A method for fabricating a device includes forming a first insulation layer to cover a removable mask and a device structure that has been defined by the mask. The device structure is below the mask. The mask is lifted off to expose a top portion of the device structure. A conductive island structure is formed over the first insulation layer and the exposed top portion of the device structure. The first insulation layer and the conductive island structure are covered with a second insulation layer. A contact is formed through the second insulation layer to the conductive island structure.
    Type: Application
    Filed: January 26, 2007
    Publication date: December 30, 2010
    Inventors: Xin Jiang, Stuart Stephen Papworth Parkin, Jonathan Sun
  • Publication number: 20080032895
    Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.
    Type: Application
    Filed: March 12, 2007
    Publication date: February 7, 2008
    Inventors: Robert Hammond, Jonathan Sun, Douglas Scalapino, Timothy James, Lincoln Bourne
  • Publication number: 20080025082
    Abstract: A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
    Type: Application
    Filed: October 9, 2007
    Publication date: January 31, 2008
    Inventors: Jonathan Sun, Stuart Parkin
  • Publication number: 20070274125
    Abstract: A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.
    Type: Application
    Filed: August 15, 2007
    Publication date: November 29, 2007
    Applicant: International Business Machines Corporation
    Inventors: Johannes Bednorz, John DeBrosse, Chung Lam, Gerhard Meijer, Jonathan Sun
  • Publication number: 20060256611
    Abstract: A nonvolatile memory cell includes a bipolar programmable storage element operative to store a logic state of the memory cell, and a metal-oxide-semiconductor device including first and second source/drains and a gate. A first terminal of the bipolar programmable storage element is adapted for connection to a first bit line. The first source/drain is connected to a second terminal of the bipolar programmable storage element, the second source/drain is adapted for connection to a second bit line, and the gate is adapted for connection to a word line.
    Type: Application
    Filed: August 31, 2005
    Publication date: November 16, 2006
    Applicant: International Business Machines Corporation
    Inventors: Johannes Bednorz, John DeBrosse, Chung Lam, Gerhard Meijer, Jonathan Sun
  • Publication number: 20060104110
    Abstract: A spin-current switchable magnetic memory element (and method of fabricating the memory element) includes a plurality of magnetic layers having a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.
    Type: Application
    Filed: November 18, 2004
    Publication date: May 18, 2006
    Applicant: International Business Machines Corporation
    Inventors: Jonathan Sun, Stuart Papworth Parkin
  • Publication number: 20050227177
    Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
    Type: Application
    Filed: June 13, 2005
    Publication date: October 13, 2005
    Applicant: Business Machines Corporation
    Inventors: Jonathan Sun, Simone Raoux, Hemantha Wickramasinghe
  • Publication number: 20050189943
    Abstract: A method of tuning a high temperature superconductor (HTS) resonator includes the steps of providing a HTS inductor and a HTS capacitor, the HTS capacitor being electrically connected to the HTS inductor. A tuning body is provided adjacent to the HTS inductor and the HTS capacitor. The relative position of the tuning body with respect to the HTS inductor and the HTS capacitor is altered so as to tune the resonator. A tunable resonant circuit is provided that includes a substrate having a planar surface. At least one resonator formed from HTS material is disposed on the substrate, the resonator having one or more turns that when combined, turn through greater than 360°.
    Type: Application
    Filed: April 12, 2004
    Publication date: September 1, 2005
    Inventors: Robert Hammond, Jonathan Sun, Douglas Scalapino, Timothy James, Lincoln Bourne
  • Publication number: 20050167656
    Abstract: A memory cell and method of fabricating the memory cell includes an insulating layer formed on a first electrode layer, the insulating layer having a first opening, a stencil layer formed on the insulating layer, and having a second opening formed in an area of the first opening, a phase-change material layer formed on a surface of the first electrode layer in the first opening, and an electrically conductive layer including a first portion formed on the stencil layer and defining a second electrode layer and a second portion formed on the phase-change material layer.
    Type: Application
    Filed: January 30, 2004
    Publication date: August 4, 2005
    Applicant: International Business Machines Corporation
    Inventors: Jonathan Sun, Simone Raoux, Hemantha Wichramasinghe
  • Publication number: 20050104101
    Abstract: A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
    Type: Application
    Filed: November 19, 2003
    Publication date: May 19, 2005
    Applicant: International Business Machines Corporation
    Inventors: Jonathan Sun, Rolf Allenspach, Stuart Stephen Parkin, John Slonczewski, Bruce Terris