Abstract: A rechargeable battery cell can include an electrode having a plurality of three-dimensional channels defined therethrough, with at least 90% of three dimensional channels sized to have pores between 50 nanometers to 400 microns. An ion exchange material can be arranged to define an interface with at least a portion of the electrode. In some embodiments the electrode includes a zinc (Zn) containing anode and a cathode including at least one of nickel hydroxide (Ni(OH)2), nickel oxyhydroxide (NiOOH), manganese dioxide (MnO2), copper oxide, and bismuth oxide.

Abstract: The invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Abstract: A rechargeable battery cell a casing and first and second electrode materials separately positioned in the casing. A mechanical impulse element is positioned to mechanically move and dislodge gas bubbles from at least one of the first and second electrode materials in response to activation. In some embodiments the mechanical impulse element can include a vibratory piezoelectric element. In other embodiments, a gas vent in the battery cell can be used to release dislodged gas bubbles.

Abstract: A rechargeable battery cell includes first and second electrode materials. A first collector defining a chamber array with a plurality of chambers is electrically connected to each other. A plurality of second electrode material and second collectors are positioned within each of the plurality of chambers. A first electrode material is positioned within the first collector to surround the second electrode material, with the second electrode material separated from the first electrode material by a separator.

Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Abstract: Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.

Abstract: Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.

Abstract: The invention pertains to the field of nanotechnology. More particularly, the invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising an indium-doped ZnSe core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Abstract: The invention relates to highly luminescent nanostructures, particularly highly luminescent nanostructures comprising a ZnSe1-xTex core and ZnS and/or ZnSe shell layers. The invention also relates to methods of producing such nanostructures.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core are provided. Also provided are methods of increasing the sphericity of nanostructures comprising subjecting nanocrystal cores to an acid etch step, an annealing step, or a combination of an acid etch step and an annealing step.

Abstract: Embodiments of the present application relate to the use of quantum dots mixed with spacer particles. An illumination device includes a first conductive layer, a second conductive layer, and an active layer disposed between the first conductive layer and the second conductive layer. The active layer includes a plurality of quantum dots that emit light when an electric field is generated between the first and second conductive layers. The quantum dots are interspersed with spacer particles that do not emit light when the electric field is generated between the first and second conductive layers.

Abstract: Highly luminescent nanostructures, particularly highly luminescent quantum dots, comprising a nanocrystal core are provided. Also provided are methods of increasing the sphericity of nanostructures comprising subjecting nanocrystal cores to an acid etch step, an annealing step, or a combination of an acid etch step and an annealing step.

Abstract: Highly luminescent nanostructures comprising a ZnSe core and ZnS shell layers, particularly highly luminescent quantum dots, are provided. The nanostructures have high photoluminescence quantum yields and in certain embodiments emit light at particular wavelengths and have a narrow size distribution. Processes for producing such highly luminescent nanostructures and techniques for shell synthesis are also provided.