Abstract: Aspects of an apparatus and method for detecting movement of an object includes a base and a projection member extending between a first second ends, wherein the first end is attached to the base. Further included is a support member at the second end of the projection member, and a guide wire carried by the support member and having a substantially fixed length, wherein the guide wire is movable between a first position and a second position in conjunction with movement of an object. Also included is a sensor located a substantially fixed distance along a path of the guide wire from the support member, wherein the sensor detects movement of the guide wire between the first second positions. Additionally included is a feedback unit in communication with the sensor, wherein the feedback unit is configured to generate feedback corresponding to the detected movement.

Abstract: Aspects of an apparatus and method for detecting movement of an object includes a base and a projection member extending between a first second ends, wherein the first end is attached to the base. Further included is a support member at the second end of the projection member, and a guide wire carried by the support member and having a substantially fixed length, wherein the guide wire is movable between a first position and a second position in conjunction with movement of an object. Also included is a sensor located a substantially fixed distance along a path of the guide wire from the support member, wherein the sensor detects movement of the guide wire between the first second positions. Additionally included is a feedback unit in communication with the sensor, wherein the feedback unit is configured to generate feedback corresponding to the detected movement.

Abstract: A method is provided that conditions the chamber walls of a HDP CVD reactor by forming a layer of doped material prior to depositing dielectric layers of the doped material onto wafers. A consistent deposition rate can be maintained during subsequent deposition. When deposition is halted, the chamber is cleaned and a thin layer of the doped material is formed on the walls. Consequently, the chamber is kept at equilibrium even during periods of idle, thereby allowing the deposition rates to be consistent even after deposition resumes after the idle periods. For prolonged idle times, the chamber is re-cleaned and the doped material is re-deposited periodically, such as every 12 hours.