Abstract: A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

Abstract: A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.

Abstract: A laser-based white light illuminant comprises a III-nitride quantum dot laser diode and phosphors that convert the emitted laser light into white light. The laser light is emitted from an active region comprised of small quantum dots having a narrow size distribution, thereby providing narrower linewidths, decreased operating current density and increased peak efficiency. The white light illuminant has a number of advantages of LED-based solid state lighting, including higher power conversion efficiency, higher achievable luminous efficacy, and new and improved functionality.