Abstract: A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

Abstract: A magnetoresistive random access memory (MRAM) structure is provided that includes a chiral spin-orbit-torque (SOT) metal bottom electrode under the bottom magnetic free layer where the chiral SOT metal bottom electrode is surrounded by a via dielectric. The chiral SOT metal bottom electrode enables the charge current, spin current and spin polarization directions to be in the same direction which is perpendicular to the surface of the chiral SOT via structure.

Abstract: A memory device includes a first terminal and a second terminal; a magnetic tunnel junction coupled to the second terminal; wherein the magnetic tunnel junction comprises a magnetic free layer, and the magnetic tunnel junction is configured to be displaced by a plurality of distances from a center position of the device; a nonmagnetic metallic spin harvesting conductor coupled to the magnetic tunnel junction; wherein the nonmagnetic metallic spin harvesting conductor has a lateral dimension that is larger than that of the magnetic tunnel junction; an electrically insulating spin conductor coupled to the nonmagnetic metallic spin harvesting conductor; wherein the electrically insulating spin conductor has relatively less electrical conductivity than the nonmagnetic metallic spin harvesting conductor; wherein the nonmagnetic metallic spin harvesting conductor collects spin current from the electrically insulating spin conductor; and a spin orbit conduction channel coupled to the electrically insulating spin con

Abstract: A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a second magnetic tunnel junction stack on the spin conducting layer, and forming a dielectric spacer layer on surfaces of the spin conducting layer and the second magnetic tunnel junction stack. The second magnetic tunnel junction stack has a width that is less than a width of the first magnetic tunnel junction stack. Also, a width of the spin conducting layer increases in a thickness direction from a first side of the spin conducting layer adjacent to the second magnetic tunnel junction stack to a second side of the spin conducting layer adjacent to the first magnetic tunnel junction stack.

Abstract: A memory structure, i.e., magnetoresistive random access memory (MRAM) structure, is provided that includes a seeding area including at least a tunnel barrier seed layer located beneath a chemical templating layer that is wider than the magnetic tunnel junction (MTJ) structure that is located on the chemical templating layer. Redeposited metallic material is located on at least a sidewall of the tunnel barrier seed layer of the seeding area so as to shunt that area of the structure. The memory structure has reduced resistance with minimal tunnel magnetoresistance (TMR) loss penalty.

Abstract: A magnetic memory device including a magnetic tunnel junction (MTJ) pillar containing a stable resonant synthetic antiferromagnet (SAF) reference layered structure in which the ferromagnetic resonance characteristics of a polarizing magnetic layer of the SAF reference layered structure are substantially matched to at least a first magnetic reference layer within the SAF reference layered structure. By substantially matching the ferromagnetic resonance characteristics of the polarizing magnetic layer to at least the first magnetic reference layer, a MTJ pillar is provided in which the dynamic stability of the polarizing magnetic layer can be improved, and undesirable magnetic reference layer instability related write-errors can be mitigated.

Abstract: A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, forming a second magnetic tunnel junction stack on the spin conducting layer, and forming a dielectric spacer layer on surfaces of the spin conducting layer and the second magnetic tunnel junction stack. The second magnetic tunnel junction stack has a width that is less than a width of the first magnetic tunnel junction stack. Also, a width of the spin conducting layer increases in a thickness direction from a first side of the spin conducting layer adjacent to the second magnetic tunnel junction stack to a second side of the spin conducting layer adjacent to the first magnetic tunnel junction stack.

Abstract: A magnetic memory device including a magnetic tunnel junction (MTJ) pillar containing a stable resonant synthetic antiferromagnet (SAF) reference layered structure in which the ferromagnetic resonance characteristics of a polarizing magnetic layer of the SAF reference layered structure are substantially matched to at least a first magnetic reference layer within the SAF reference layered structure. By substantially matching the ferromagnetic resonance characteristics of the polarizing magnetic layer to at least the first magnetic reference layer, a MTJ pillar is provided in which the dynamic stability of the polarizing magnetic layer can be improved, and undesirable magnetic reference layer instability related write-errors can be mitigated.

Abstract: A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.

Abstract: A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a non-magnetic, spin-conducting metallic layer sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. The mDMTJ structure of the present application exhibits efficient switching (at a low current) and speedy readout (high TMR).

Abstract: A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack.

Abstract: A modified double magnetic tunnel junction (mDMTJ) structure is provided which includes a non-magnetic, spin-conducting metallic layer sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. The mDMTJ structure of the present application exhibits efficient switching (at a low current) and speedy readout (high TMR).

Abstract: A technique relates to a magnetic device. A configuration in a memory layer of the magnetic device is adjusted, the configuration affecting stochastic fluctuations in a free magnetic layer of a magnetic tunnel junction coupled to the memory layer. The stochastic fluctuations are used to define a random number according to the configuration in the memory layer.

Abstract: A technique relates to a magnetic device. A configuration in a memory layer of the magnetic device is adjusted, the configuration affecting stochastic fluctuations in a free magnetic layer of a magnetic tunnel junction coupled to the memory layer. The stochastic fluctuations are used to define a random number according to the configuration in the memory layer.

Abstract: A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

Abstract: A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.

Abstract: A spin-current switched magnetic memory element includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers. The plurality of magnetic layers includes at least one composite layer.

Abstract: A method of fabricating a spin-current switched magnetic memory element includes providing a wafer having a bottom electrode, forming a plurality of layers, such that interfaces between the plurality of layers are formed in situ, in which the plurality of layers includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers, lithographically defining a pillar structure from the plurality of layers, and forming a top electrode on the pillar structure.

Abstract: A spin-current switchable magnetic memory element includes a plurality of magnetic layers including a perpendicular magnetic anisotropy component, at least one of the plurality of magnetic layers including an alloy of a rare-earth metal and a transition metal, and at least one barrier layer formed adjacent to at least one of the plurality of magnetic layers.

Abstract: Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.